Untitled
Abstract: No abstract text available
Text: 19-4344; Rev 0; 10/08 KIT ATION EVALU E L B AVAILA Dual, 7.5V to 76V, Hot-Swap and Diode ORing Controller The MAX5963 dual hot-swap and diode ORing controller provides complete protection for dual-supply high availability systems. The device operates from 7.5V to
|
Original
|
MAX5963
T4066
|
PDF
|
high voltage circuit breaker
Abstract: 6v to 7.5v dc power supply circuit bp 103-5 DIODE BP ORing diode JESD51-7 MAX5080 XMAX5963 max5963 si7222
Text: 19-4344; Rev 0; 10/08 KIT ATION EVALU E L B AVAILA Dual, 7.5V to 76V, Hot-Swap and Diode ORing Controller The MAX5963 dual hot-swap and diode ORing controller provides complete protection for dual-supply high availability systems. The device operates from 7.5V to
|
Original
|
MAX5963
T4066
high voltage circuit breaker
6v to 7.5v dc power supply circuit
bp 103-5
DIODE BP
ORing diode
JESD51-7
MAX5080
XMAX5963
si7222
|
PDF
|
T40R06220400
Abstract: No abstract text available
Text: T40R06220400 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)650 V(BO) Max. (V)0.8k I(S) Max. (A)5.0m I(TRM) Max. (A)35² @ t(w) (s) (Test Condition) I(TSM) Max. (A)300¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current100m V(TM) Max. (V)40 @I(T) (A) (Test Condition)1.0k
|
Original
|
T40R06220400
Current100m
NumberTY00200003
|
PDF
|
shockley diode
Abstract: No abstract text available
Text: T40R06220300 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)650 V(BO) Max. (V)0.8k I(S) Max. (A)5.0m I(TRM) Max. (A)35² @ t(w) (s) (Test Condition) I(TSM) Max. (A)300¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current100m V(TM) Max. (V)40 @I(T) (A) (Test Condition)1.0k
|
Original
|
T40R06220300
Current100m
NumberTY00200003
shockley diode
|
PDF
|
T1081N
Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Text: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N
|
Original
|
kuka-2003-inhalt
T1901N
T1503N
T201N
T1081N
T1201N
T501N
T551N
T553N
T739N
T1081N
T553N
eupec igbt
EUPEC T1503N
kuka-2003-inhalt.qxd
T2351N
T2563
T1049
T1601
T1869N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-3682; Rev 0; 5/05 2-Channel Temperature Monitor with Dual, Automatic, PWM Fan-Speed Controller Features ♦ 2 Thermal-Diode Inputs ♦ Up to 25kHz PWM Output Frequency ♦ 3 Selectable SMBus Addresses ♦ Local Temperature Sensor ♦ 1°C Remote Temperature Accuracy
|
Original
|
MAX6639
MAX6639AEE+
MAX6639AEE
MAX6639YAEE+
MAX6639AEE-T
MAX6639ATE+
21-0140K
T1655
MAX6639ATE
MAX6639ATE-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-3682; Rev 0; 5/05 2-Channel Temperature Monitor with Dual, Automatic, PWM Fan-Speed Controller Features ♦ 2 Thermal-Diode Inputs ♦ Up to 25kHz PWM Output Frequency ♦ 3 Selectable SMBus Addresses ♦ Local Temperature Sensor ♦ 1°C Remote Temperature Accuracy
|
Original
|
MAX6639
MAX6639AEE
MAX6639YAEE+
MAX6639AEE-T
MAX6639ATE+
21-0140K
T1655
MAX6639ATE
MAX6639ATE-T
MAX6639ATE
|
PDF
|
amd athlon PIN LAYOUT
Abstract: digital tachometer CMPT3906 KST3906-TF MAX6639 MAX6639AEE MAX6639ATE SST3906 2N3904 2N3906
Text: 19-3682; Rev 0; 5/05 2-Channel Temperature Monitor with Dual, Automatic, PWM Fan-Speed Controller Features ♦ 2 Thermal-Diode Inputs ♦ Up to 25kHz PWM Output Frequency ♦ 3 Selectable SMBus Addresses ♦ Local Temperature Sensor ♦ 1°C Remote Temperature Accuracy
|
Original
|
25kHz
MAX6639
amd athlon PIN LAYOUT
digital tachometer
CMPT3906
KST3906-TF
MAX6639
MAX6639AEE
MAX6639ATE
SST3906
2N3904
2N3906
|
PDF
|
T40N10
Abstract: No abstract text available
Text: MTB40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for
|
Original
|
MTB40N10E
MTB40N10E/D
T40N10
|
PDF
|
t40n10e
Abstract: T40N10 2305 SOT-23 MTB40N10ET4 AN569 MTB40N10E sot-223 body marking A G
Text: MTB40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for
|
Original
|
MTB40N10E
r14525
MTB40N10E/D
t40n10e
T40N10
2305 SOT-23
MTB40N10ET4
AN569
MTB40N10E
sot-223 body marking A G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CD42_ _90 CD47 90 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 90 Amperes/1600 Volts Description: CD42_ _90, CD47_ _90 SCR/Diode POW-R-BLOK™ Module 90 Amperes/1600 Volts Powerex SCR/Diode Modules are
|
OCR Scan
|
Amperes/1600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.
|
OCR Scan
|
DS4231
DSF21060SV
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
37bfl522
|
PDF
|
DIODE SMD t04
Abstract: BAV105 smd T04 PHILIPS SMALL SIGNAL DIODE
Text: Philips Semiconductors Product specification High-speed diode BAV105 FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAV105 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD8OC SMD
|
OCR Scan
|
BAV105
DIODE SMD t04
BAV105
smd T04
PHILIPS SMALL SIGNAL DIODE
|
PDF
|
thermistor 40k
Abstract: NEC LASER DIODE PIN DIP thermo electrical cooler module NDL5762P
Text: N E C ELECTRONICS INC bEE D • b4B?S25 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5762P is a 1310 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is
|
OCR Scan
|
b4S7S25
NDL5762P
NDL5762P
400mA,
JT-40K
T-40K
thermistor 40k
NEC LASER DIODE PIN DIP
thermo electrical cooler module
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC bSE D m b457525 0D3ÛGS1 755 H N E C E DATA SHEET LASER DIODE MODULE N EC ELECTRON DEVICE NDL5803P, NDL5803PA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTION PACKAGE DIMENSIONS
|
OCR Scan
|
b457525
NDL5803P,
NDL5803PA
NDL5803P
NDL5803PA
b427S25
|
PDF
|
t40hfl100s05
Abstract: E78996 t85hfl100s05 T70HFL20S02
Text: International loRjRectifier Part Number T40HFL10S02 T40HFL20S02 T40HFL40S02 T40HFL60S02 Power Modules Diode, Fast •F AV @ Vr r m (V) 100 200 400 600 T40HFL10S05 T40HFL20S05 T40HFL40S05 T40HFL60S05 T40HFL80S05 T40HFL100S05 100 200 400 600 800 1000 T40HFL10S10
|
OCR Scan
|
T40HFL10S02
T40HFL20S02
T40HFL40S02
T40HFL60S02
T40HFL10S05
T40HFL20S05
T40HFL40S05
T40HFL60S05
T40HFL80S05
T40HFL100S05
E78996
t85hfl100s05
T70HFL20S02
|
PDF
|
5M3T
Abstract: z1071 BAV105 BAW62
Text: • bbSa^Bl 00243Ô3 STS * A P X N AMER PHILIPS/DISCRETE BAV105 b?E » J V_ ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SODSOC envelope. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage Repetitive peak reverse voltage
|
OCR Scan
|
BAV105
OD80C.
BAV105
5M3T
z1071
BAW62
|
PDF
|
E78996
Abstract: E.78996 E78996 Diode B40HFL40S10 T70HFL100S05 F 78996 78996 E 78996 IRKEL56-06S02 IRKEL56-04S02
Text: International S Rectifier Power Modules Diode, Fast Part Number B40HFL10S02 B40HFL20S02 B40HFL40S02 B40HFL60S02 B40HFL10S05 B40HFL20S05 B40HFL40S05 B40HFL60S05 B40HFL80S05 B40HFL100S05 B40HFL10S10 B40HFL20S10 B40HFL40S10 B40HFL60S10 B40HFL80S10 B40HFL100S10
|
OCR Scan
|
B40HFL10S02
B40HFL20S02
B40HFL40S02
B40HFL60S02
B40HFL10S05
B40HFL20S05
B40HFL40S05
B40HFL60S05
B40HFL80S05
B40HFL100S05
E78996
E.78996
E78996 Diode
B40HFL40S10
T70HFL100S05
F 78996
78996
E 78996
IRKEL56-06S02
IRKEL56-04S02
|
PDF
|
35w4
Abstract: 35w4, tube I960 35w4 tube rs tube tube 35W4 ET-T407C general electric
Text: 35W4 ET-T407C Page 1 35W4 P0y^ 5-60 DIODE TUBES FOR HALF-WAVE POWER-RECTIFIER APPLICATIONS DESCRIPTION AND RATING The 35W4 is a miniature half-wave rectifier for use in line-operated equip ment having series-connected heaters. The heater is tapped to permit operation
|
OCR Scan
|
ET-T407C
K-556
35w4
35w4, tube
I960
35w4 tube
rs tube
tube 35W4
ET-T407C
general electric
|
PDF
|
diode ys2 100
Abstract: N4921 N4918 1N4000-series LA431 n4919 1n4000 DIODE 1n4000 sERIES DIODES 1N823 1N34* diode
Text: INTERNATIONAL SEMICOND •=1000370 0000007 T40 « I S E M 41E T H t- ~o JEDEC REGISTERED, TEMPERATURE 1N4148 SWITCHING DIODE COMPENSATED VOLTAGE REFERENCE DIODES (DO-7 Package MAXIMUM RATINGS MECHANICAL O pe rating Tem perature: -6 5 °C to + 2 0 0 °C H e rm e tic a lly Sealed DO-35
|
OCR Scan
|
1N821
1N823
1N825
1N827
1N829
1N3500
1N34S6
1N3497
1N3499
diode ys2 100
N4921
N4918
1N4000-series
LA431
n4919
1n4000 DIODE
1n4000 sERIES DIODES
1N34* diode
|
PDF
|
f650
Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Text: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S
|
OCR Scan
|
PA54H
PA54HiiN
19-5MAX.
-1611tÂ
-5611tÂ
Sifi-27
f650
UPA54H
DIODE GOC 63
411K
PA54H
diode 3L
DIODE T420
LT 745 S
t802
t514
|
PDF
|
FL80S05
Abstract: FL10S05
Text: In te rn a tio n a l IÖ R Rectifier Part Number VRRM V & Fast Recovery Diodes 1 fa v @t c (A) (C) •fsm 50 Hz 60Hz (A) (A) % (V) RQK(DC) (K/W) t rr (nS) Fax on Demand Number Notes Case Outline Key Diode T-M odule T40HFL10S02 100 40 70 400 420 1.6 0.85
|
OCR Scan
|
T40HFL10S02
T40HFL10S05
T40HFL20S02
FL20S05
T40HFL40S02
T40HFL40S05
FL60S02
T40HFL60S05
FL80S05
FL10S05
|
PDF
|
FUH -29A001B
Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Text: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in
|
OCR Scan
|
BUK638-800A/B
BUK638
-800A
1E-09
BUK638-80Ã
FUH -29A001B
BUK638-800A
BUK638-800B
WO 02S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: in Comlinear Corporation I Wideband, Low Power Monolithic Op Amp C LC 406 '! f . APPLICATIONS: • ■ H I FEATURES typical : video distribution amp HDTV amplifier flash A/D driver D/A transim pedance buffer pulse amplifier photo-diode amp LAN amplifier •
|
OCR Scan
|
160MHz
CLC406
CLC406
OA-15.
|
PDF
|
