T589N
Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Text: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]
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D428N
D448N
D660N
D748N
D758N
D798N
D1029N
D1049N
D2209N
D2228N
T589N
TO41
TO-50
TO57
disc thyristor
TO100
D1029N
D1049N
D2209N
D2659N
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Untitled
Abstract: No abstract text available
Text: T27G Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current40m V(RRM)(V) Rep.Pk.Rev. Voltage15 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)40m I(RM) Max.(A) Reverse Current100u @V(R) (V)(Test Condition)10
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Current40m
Voltage15
Current100u
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR15L30 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR15L30 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR15L30
MGBR15L30
MGBR15L30L-T27-R
MGBR15L30G-T27-R
O-277
O-227
QW-R601-232
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR15L40 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR15L40 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR15L40
MGBR15L40
MGBR15L40L-T27-R
MGBR15L40G-T27-R
O-277
O-227
QW-R601-233
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR12L60 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR12L60 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR12L60
MGBR12L60
MGBR12L60L-T27-R
MGBR12L60G-T27-R
O-277
O-227
QW-R601-193
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR12L30 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR12L30 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR12L30
MGBR12L30
MGBR12L30L-T27-R
MGBR12L30G-T27-R
O-277
O-227
QW-R601-230
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR20L40 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR20L40 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR20L40
MGBR20L40
MGBR20L40L-T27-R
MGBR20L40G-T27-R
O-277
O-227
QW-R601-234
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TO227
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR15L60 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR15L60 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR15L60
MGBR15L60
MGBR15L60L-T27-R
MGBR15L60G-T27-R
O-277
O-227
QW-R601-194
TO227
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR12L40 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR12L40 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR12L40
MGBR12L40
MGBR12L40L-T27-R
MGBR12L40G-T27-R
O-277
O-227
QW-R601-231
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR10L30 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR10L30 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR10L30
MGBR10L30
MGBR10L30L-T27-R
MGBR10L30G-T27-R
O-277
O-227
QW-R601-201
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MGBR10L60 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR10L60 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR10L60
MGBR10L60
MGBR10L60L-T27-R
MGBR10L60G-T27-R
O-277
O-227
QW-R601-203
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD MGBR20L60 Preliminary DIODE MOS GATED BARRIER RECTIFIER DESCRIPTION The UTC MGBR20L60 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
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MGBR20L60
MGBR20L60
MGBR20L60L-T27-R
MGBR20L60G-T27-R
O-277
O-227
QW-R601-195
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T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 10 Motorola Preferred Device CATHODE ► f-J W -° 2 3 CATHODE/ANODE 2 CASE 318-08, STYLE 11 SOT-23 TO—236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
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BAV99LT1
OT-23
236AB)
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diode 6b3
Abstract: No abstract text available
Text: O K I electronic components QL392N-03, QL3492N-03 1.3 |im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-03 and OL3492N-Ü3 are 1.3 |iin, MQW InGaAsP/InP laser-diode coaxial modules with single-mode fiber pigtails. These modules are optimal light sources for optical subscriber loops and
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QL392N-03,
QL3492N-03
OL392N-03
OL3492N-Ã
OL391N-03,
OL3492N-Q3
OL392N-03
L72M2MG
OL391N-Q3,
diode 6b3
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c1251
Abstract: transistor c1300 C1109 E5015 transistor C128 C1240 C1299 C1300 C1301 C1332
Text: à DESIGNER SERIES Monsanto MCT272 PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Controlled Current Transfer Ratio — 75% to 150% specified conditions The M C T272 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu
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MCT272
MCT272
c1251
transistor c1300
C1109
E5015
transistor C128
C1240
C1299
C1300
C1301
C1332
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OL391N-03
Abstract: OL392N-03
Text: O K I electronic com ponents QL392N-03, QL3492N-03 1.3 im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-Ü3 and OL3492N-03 are 1.3 (un, M Q W InG aA sP/ InP laser-diode coaxial m odules w ith single-m ode fiber pigtails. These m odules are optim al light sources for optical subscriber loops and
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QL392N-03,
QL3492N-03
OL392N-CB
b7H4H40
OL391N-03,
OL3492N-Q3
OL392N-03
b7242HD
0G22512
OL391N-03
OL392N-03
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c1251
Abstract: MCT273 C1240 C1333 C1251 diode C1304 transistor C128 C1109 C1305
Text: r DESIGNER SERIES Monsanto MCT273 PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Controlled Current Transfer Ratio — 125% to 250% specified conditions The M C T273 is a p h ototransistor-type o p tica lly coupled isolator. A n infrared e m ittin g diode manu
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MCT273
MCT273
c1251
C1240
C1333
C1251 diode
C1304
transistor C128
C1109
C1305
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC b2E D • b427S25 0030107 STb « N E C E DATA SHEET NEC PHOTO DIODE NDL5500 ELECTRON DEVICE 1 000 to 1 600 nm OPTICAL FIBER CO M M U N ICATIO N S 050 InGaAs A V A L A N C H E PH OTO DIODE D ESCRIPTION NDL5500 is an InGaAs Avalanche Photodiode especially designed for a detector of long wavelength optical fiber communica
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b427S25
NDL5500
NDL5500
NDL5522P
L5422P*
NDL5422P:
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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