Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE T25 4 KO Search Results

    DIODE T25 4 KO Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE T25 4 KO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    in5719

    Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
    Text: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching


    Original
    PDF 1N5719, 1N5767, 5082-3xxx/ 1N57xx 5968-7182E 5989-3339EN in5719 DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx

    Untitled

    Abstract: No abstract text available
    Text: Apr. 2012 R5535V-E2-FB EA-231-135021 Power Switch IC for Express Card • OUTLINE The R5535V is the power interface switch IC for single slot ExpressCard and realizes the total power management function required by ExpressCard. The R5535V distributes 3.3V, 3.3Vaux, and 1.5V to the ExpressCard socket.


    Original
    PDF R5535V-E2-FB EA-231-135021 R5535V R5535V. SSOP-20 Room403, Room109, 10F-1,

    VCSEL array, 850nm

    Abstract: 1550nm laser diode for 10Gbps HFE4192-582 photodiode 1550nm 4 Ghz to56 TO56 package 980nm VCSEL 1310nm laser diode for 10Gbps 1550nm optical detector 10Gbps 850nm VCSEL application
    Text: DATA SHEET 4.25GBPS 850NM VCSEL LC TOSA PACKAGE HFE4192-58X Capable of modulation operation from DC to 5Gbps This product is a high-performance 850nm VCSELs Vertical Cavity SurfaceEmitting Lasers designed for high-speed data communications and packaged with a custom designed power monitor diode. The power monitor diode can


    Original
    PDF 25GBPS 850NM HFE4192-58X 1-866-MY-VCSEL VCSEL array, 850nm 1550nm laser diode for 10Gbps HFE4192-582 photodiode 1550nm 4 Ghz to56 TO56 package 980nm VCSEL 1310nm laser diode for 10Gbps 1550nm optical detector 10Gbps 850nm VCSEL application

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 4.25GBPS 850NM VCSEL LC TOSA PACKAGE HFE4192-58X Capable of modulation operation from DC to 5Gbps This product is a high-performance 850nm VCSELs Vertical Cavity SurfaceEmitting Lasers designed for high-speed data communications and packaged with a custom designed power monitor diode. The power monitor diode can


    Original
    PDF 25GBPS 850NM HFE4192-58X 1-866-MY-VCSEL

    laser diode to56

    Abstract: LC TOSA wiggle HFE4192-58X HFE4192-582
    Text: DATA SHEET 4.25GBPS 850NM VCSEL LC TOSA PACKAGE HFE4192-58X Capable of modulation operation from DC to 5Gbps This product is a high-performance 850nm VCSELs Vertical Cavity SurfaceEmitting Lasers designed for high-speed data communications and packaged with a custom designed power monitor diode. The power monitor diode can


    Original
    PDF 25GBPS 850NM HFE4192-58X 3-15mA 1-866-MY-VCSEL laser diode to56 LC TOSA wiggle HFE4192-58X HFE4192-582

    850nm VCSEL application

    Abstract: LC TOSA wiggle HFE4180
    Text: DATA SHEET 4.25GBPS 850NM VCSEL LC TOSA PACKAGE HFE4192-58X Capable of modulation operation from DC to 5Gbps This product is a high-performance 850nm VCSELs Vertical Cavity SurfaceEmitting Lasers designed for high-speed data communications and packaged with a custom designed power monitor diode. The power monitor diode can


    Original
    PDF 25GBPS 850NM HFE4192-58X 3-15mA 1-866-MY-VCSEL 850nm VCSEL application LC TOSA wiggle HFE4180

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 4.25GBPS 850NM VCSEL LC TOSA PACKAGE HFE4192-58X Capable of modulation operation from DC to 5Gbps This product is a high-performance 850nm VCSELs Vertical Cavity SurfaceEmitting Lasers designed for high-speed data communications and packaged with a custom designed power monitor diode. The power monitor diode can


    Original
    PDF 25GBPS 850NM HFE4192-58X 1-866-MY-VCSEL

    IR 10e

    Abstract: 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D
    Text: Agilent 1N5711, 1N5712, 5082-2300 Series, 5082-2800 Series, 5082-2900 Schottky Barrier Diodes for General Purpose Applications Data Sheet Features Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a


    Original
    PDF 1N5711, 1N5712, 5082-28xx/ 1N57xx 5968-7181E 5989-3338EN IR 10e 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D

    APD 10gbps

    Abstract: HFD3180-103 Advanced Optical HFE4191-441 APD 850nm HFE4190 LC TOSA wiggle APD Arrays 850NM HFD3180-108 HFE4190-441
    Text: DATA SHEET 2.5GBPS 850NM VCSEL LC TOSA PACKAGE HFE419X-441 FEATURES: 850nm multi-mode oxide isolated VCSEL Extended Temperature Range Operation – 40 to +85 deg operating range Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can


    Original
    PDF 850NM HFE419X-441 3-15mA 1-866-MY-VCSEL APD 10gbps HFD3180-103 Advanced Optical HFE4191-441 APD 850nm HFE4190 LC TOSA wiggle APD Arrays HFD3180-108 HFE4190-441

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 PACKAGE HFE409X-342 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 flat window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-342 3-15mA 1-866-MY-VCSEL

    HFE4091-341

    Abstract: HFE4091 850nm APD HFD3081 APD Arrays QFN-36 footprint 850NM HFE4092-341 HFE409X-341 T-25
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 PACKAGE HFE409X-341 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 flat window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-341 3-15mA 1-866-MY-VCSEL HFE4091-341 HFE4091 850nm APD HFD3081 APD Arrays QFN-36 footprint HFE4092-341 HFE409X-341 T-25

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 PACKAGE HFE409X-342 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 flat window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-342 3-15mA 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 PACKAGE HFE409X-341 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 flat window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-341 3-15mA 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL SC TOSA PACKAGE HFE439X-541 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can component, prealigned into SC Sleeve Designed for drive currents between 3-15mA average


    Original
    PDF 850NM HFE439X-541 3-15mA 1-866-MY-VCSEL

    HFD3081-002

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 TILT WINDOW CAN HFE409X-541 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-541 3-15mA 1-866-MY-VCSEL HFD3081-002

    APD Arrays

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL LC TOSA PACKAGE HFE419X-441 FEATURES: 850nm multi-mode oxide isolated VCSEL Extended Temperature Range Operation – 40 to +85 deg operating range Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can


    Original
    PDF 850NM HFE419X-441 3-15mA 1-866-MY-VCSEL APD Arrays

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL SC TOSA PACKAGE HFE439X-541 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can component, prealigned into SC Sleeve Designed for drive currents between 3-15mA average


    Original
    PDF 850NM HFE439X-541 3-15mA 1-866-MY-VCSEL

    hfe4094

    Abstract: HFD3081 APD Arrays 850NM HFE4093-342 HFE4094-342 HFE409X-341 HFE409X-342 T-25 HFE4093
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 PACKAGE HFE409X-342 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 flat window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-342 3-15mA 1-866-MY-VCSEL hfe4094 HFD3081 APD Arrays HFE4093-342 HFE4094-342 HFE409X-341 HFE409X-342 T-25 HFE4093

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 PACKAGE HFE409X-341 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 flat window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-341 3-15mA 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 TILT WINDOW CAN HFE409X-541 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-541 3-15mA 1-866-MY-VCSEL

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL LC TOSA PACKAGE HFE419X-441 FEATURES: 850nm multi-mode oxide isolated VCSEL Extended Temperature Range Operation – 40 to +85 deg operating range Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can


    Original
    PDF 850NM HFE419X-441 3-15mA 1-866-MY-VCSEL

    HFE4091

    Abstract: hfe4094 HFE409X-542 APD Arrays 850NM HFE4091-541 HFE4093-542 HFE4094-542 T-25 HFE4093
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 TILT WINDOW CAN HFE409X-542 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-542 3-15mA 1-866-MY-VCSEL HFE4091 hfe4094 HFE409X-542 APD Arrays HFE4091-541 HFE4093-542 HFE4094-542 T-25 HFE4093

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2.5GBPS 850NM VCSEL TO-46 TILT WINDOW CAN HFE409X-542 FEATURES: 850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 2.5Gbps TO-46 tilt window metal can component Designed for drive currents between 3-15mA average Packaged with a back monitor


    Original
    PDF 850NM HFE409X-542 3-15mA 1-866-MY-VCSEL

    ITT DIODE W7

    Abstract: diode t25 4 i9
    Text: 1 D I 2 O O E - O 5 5 20Q a /< r7 - h ;7 '• O u tlin e D r a w in g s KO POWER TRANSISTOR MODULE tt.O _ . M jO . "'1 „ , ÎJ.0 ! <8, : Features • ¡SW/± -«ti - in High Voltage • y'J— 'J K r tlE • A S O M S i' •mmte -Bit m É è gQ •*23 cm


    OCR Scan
    PDF E82988 ITT DIODE W7 diode t25 4 i9