VUB145-16NOXT
Abstract: No abstract text available
Text: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC
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145-16NO1
E72873
20101007a
VUB145-16NOXT
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Untitled
Abstract: No abstract text available
Text: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC
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116-16NO1
116-16N
E72873
20101007a
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JESD22-A114
Abstract: JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9600D PCA9600DP
Text: PCA9600 Dual bidirectional bus buffer Rev. 04 — 11 November 2009 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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PCA9600
PCA9600
P82B96.
JESD22-A114
JESD22-A115
JESD78
P82B96
PCA82C250
PCA9600D
PCA9600DP
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JESD22-A114
Abstract: JESD78 P82B96 PCA82C250 PCA9600 PCA9601 AN10658
Text: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
JESD22-A114
JESD78
PCA82C250
AN10658
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PCA9601
Abstract: AN10658 diode sy 104 JESD22-A114 JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9601DP
Text: PCA9601 Dual bidirectional bus buffer Rev. 01 — 28 May 2010 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
AN10658
diode sy 104
JESD22-A114
JESD22-A115
JESD78
PCA82C250
PCA9601DP
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PDF
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Untitled
Abstract: No abstract text available
Text: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
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P82B96
Abstract: JESD22-A114 JESD78 PCA82C250 PCA9511A PCA9600 PCA9600D PCA9600DP AN10658
Text: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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Original
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PCA9600
PCA9600
P82B96.
P82B96
JESD22-A114
JESD78
PCA82C250
PCA9511A
PCA9600D
PCA9600DP
AN10658
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PDF
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Untitled
Abstract: No abstract text available
Text: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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PCA9600
PCA9600
P82B96.
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diode sy 160
Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
Text: 5mm FLANGE BASED LED LAMPS Features BLF051 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLF051
BLF051-V
MAR/01/2001
diode sy 160
diode sy 400
MG 12v diode
Diode SY 250
BLF051MGC-12V-P
BLF051MGC-24V-P
BLF051MGC-6V-P
BLF051SYC-12V-P
BLF051SYC-24V-P
BLF051SYC-6V-P
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MARKING SY SOT23
Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330
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OCR Scan
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FLLD261
-200m
FLLD263
MARKING SY SOT23
SY SOT23
MARKING SOT23-3 LF
MARKING P8A
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BAT45C
Abstract: No abstract text available
Text: £ÿj SGS-THOMSON BAT 45 SMALL SIGNAL SCHOTTKY DIODE DES CRIPTIO N Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. A B S O L U T E RATING S limiting values Sy m b o l Param eter V alu e rrm R epetitive Peak R everse Voltage
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OCR Scan
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SY 625
Abstract: No abstract text available
Text: HSS82-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=200V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les ea sy
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OCR Scan
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HSS82------------------------Silicon
HSS82_
175istics
HSS82
SY 625
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diode sy 715
Abstract: No abstract text available
Text: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F
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OCR Scan
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cH7Q57Ã
001G35S
diode sy 715
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PDF
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Untitled
Abstract: No abstract text available
Text: HSS83-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=250V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les e a sy
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OCR Scan
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HSS83------------------------Silicon
HSS83
HSS83
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200JH21
Abstract: toshiba 3-60B1A
Text: -_ 9097250 TOSHIBA 39C 02245 C D IS C R E T E / O P T O 0 7"- 0 3 - 2 3 FAST RECOVERY DIODE 0 SHIBA { D I S C R E T E / O P T 0> 200JH21 ln DËJ'iD^aSG 0002545 4 Unit in 600V 200A MAXIMUM RATINGS CHARACTERISTIC SY M B O L RATING UN IT Repetitive P eak R everse Voltage
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OCR Scan
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200JH21
30QJH21
Repeti25
toshiba 3-60B1A
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PDF
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B159 diode
Abstract: 6DI50B-050 le50a 6di50b B-159 M606
Text: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s
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OCR Scan
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6DI50B-050
E82988
B-160
B159 diode
le50a
6di50b
B-159
M606
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PDF
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sy 320 diode
Abstract: No abstract text available
Text: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode
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OCR Scan
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BAT54W
SA891
M80O46
sy 320 diode
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PDF
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15FWJ11
Abstract: 15GWJ11 30GWJ11 30FWJ11 AC23A
Text: 9097250 TOSHIBA 39C CDI S C R E T E / O P T O 02257 7^ 03-^ 7 SCHOTTKY BARRIER DIODE Unit in nm 15GWJ11 40V 15A MAXIMUM RATINGS C H A R A C T E R IS T IC SY M B O L Repetitive Peak 15FWJ11 R everse Voltage 15GWJ11 RATING UNIT 30 V rrm 40 Average F o rw a rd C u rrent
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OCR Scan
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15GWJ11
15FWJ11
100Hz
3-11G1A
15GWJ11
30GWJ11
30FWJ11
AC23A
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toshiba 6jg11
Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
Text: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage
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OCR Scan
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6JG11
6BG11
6DG11
6FG11
6GG11
13Max.
3-11B1A
12BG11-12JG11
12BH11
toshiba 6jg11
12GH11
12JG11
12JH11
6JG11
12GG11
IF-10A
6DG11
6GG11
12BG11
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ir20d
Abstract: 3DH61 3JH61 1S2711 3GH61 3BH61
Text: 9097250 TOSHIBA <D IS C R E T E / O P T O _ FAST RECOVERY DIODE 39C 0 2 2 4 2 DE I T G T T H S D TOSHIBA -CDISCRETE/0PT0} 1500V 1.5A 1S2711 O T ~ 6 3_-' * DDDE54S T Unit in am M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L U N IT R A T IN G
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OCR Scan
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1S2711
20diA,
ir20d
3DH61
3JH61
1S2711
3GH61
3BH61
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PDF
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E72445
Abstract: 2500VRM
Text: C a Y D O M Series M50 P A R Î NUMBER t&f N tlFJCA TIO N 50-100Amp SCR/DIODE MODULES • Over 40KW Output Capability ELECTRICAL SY M B O L Maximum Voltage Drop @ Am ps Peak vF • M SPECIFICATION M 5050 M 50100 1 .7 V 0 5OA I.4 V 100A U di/dt Critical Rate of Rise o f O n-State Current @ Tj=125’C A/(»
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OCR Scan
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50-100Amp
400VRRV1)
2500Vrm
E72445)
E72445
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PDF
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30JG11
Abstract: 30GG11 30BG11 30DG11 30FG11
Text: 9 0 9 7 2 50 T O S H I B A CDI S C R E T E i O P T O > 39C FAST RECOVERY DIODE 02244 D d W ? DE I^D-iVESG 0 DD2244 2 | Unit in ui 600V 30A 3 Q JS Î1 ,Max -f* 20- M A X IM U M RATINGS C H A R A C T E R IS T IC SY M B O L RATING 30BG11 30DG11 R epetiiïïe Peak
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OCR Scan
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0DDZ244
30BG11
30DG11
30FG11
30GG11
30JG11
3-45A1A
30JG11
30GG11
30BG11
30DG11
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PDF
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BUK454-400B
Abstract: T0220AB PPD-25
Text: N AMER b^E PHILIPS/DISCRETE D • hhS3^3l □□3Db2D BUK454-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,
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OCR Scan
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hhS3131
BUK454-400B
T0220AB
BUK454-400B
T0220AB
PPD-25
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PDF
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Schottky Rectifier 250V
Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
Text: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V
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OCR Scan
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2000V
0000V
0000V
00000V
10000V
Schottky Rectifier 250V
diode 20000v
NX DIODE
schottky diode 800V
diode 50000v
Schottky diode high reverse voltage
gw diode
diode 10000v
diode schottky 900v
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