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    DIODE SY 400 Search Results

    DIODE SY 400 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SY 400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VUB145-16NOXT

    Abstract: No abstract text available
    Text: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC


    Original     		PDF 145-16NO1 E72873 20101007a VUB145-16NOXT

    Untitled

    Abstract: No abstract text available
    Text: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC


    Original     		PDF 116-16NO1 116-16N E72873 20101007a

    JESD22-A114

    Abstract: JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9600D PCA9600DP
    Text: PCA9600 Dual bidirectional bus buffer Rev. 04 — 11 November 2009 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a


    Original     		PDF PCA9600 PCA9600 P82B96. JESD22-A114 JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600D PCA9600DP

    JESD22-A114

    Abstract: JESD78 P82B96 PCA82C250 PCA9600 PCA9601 AN10658
    Text: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a


    Original     		PDF PCA9601 PCA9601 P82B96 PCA9600 JESD22-A114 JESD78 PCA82C250 AN10658

    PCA9601

    Abstract: AN10658 diode sy 104 JESD22-A114 JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9601DP
    Text: PCA9601 Dual bidirectional bus buffer Rev. 01 — 28 May 2010 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a


    Original     		PDF PCA9601 PCA9601 P82B96 PCA9600 AN10658 diode sy 104 JESD22-A114 JESD22-A115 JESD78 PCA82C250 PCA9601DP

    Untitled

    Abstract: No abstract text available
    Text: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a


    Original     		PDF PCA9601 PCA9601 P82B96 PCA9600

    P82B96

    Abstract: JESD22-A114 JESD78 PCA82C250 PCA9511A PCA9600 PCA9600D PCA9600DP AN10658
    Text: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a


    Original     		PDF PCA9600 PCA9600 P82B96. P82B96 JESD22-A114 JESD78 PCA82C250 PCA9511A PCA9600D PCA9600DP AN10658

    Untitled

    Abstract: No abstract text available
    Text: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a


    Original     		PDF PCA9600 PCA9600 P82B96.

    diode sy 160

    Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
    Text: 5mm FLANGE BASED LED LAMPS Features BLF051 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.


    Original     		PDF BLF051 BLF051-V MAR/01/2001 diode sy 160 diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P

    MARKING SY SOT23

    Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
    Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330


    OCR Scan     		PDF FLLD261 -200m FLLD263 MARKING SY SOT23 SY SOT23 MARKING SOT23-3 LF MARKING P8A

    BAT45C

    Abstract: No abstract text available
    Text: £ÿj SGS-THOMSON BAT 45 SMALL SIGNAL SCHOTTKY DIODE DES CRIPTIO N Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. A B S O L U T E RATING S limiting values Sy m b o l Param eter V alu e rrm R epetitive Peak R everse Voltage


    OCR Scan     		PDF

    SY 625

    Abstract: No abstract text available
    Text: HSS82-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=200V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les ea sy


    OCR Scan     		PDF HSS82------------------------Silicon HSS82_ 175istics HSS82 SY 625

    diode sy 715

    Abstract: No abstract text available
    Text: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F


    OCR Scan     		PDF cH7Q57Ã 001G35S diode sy 715

    Untitled

    Abstract: No abstract text available
    Text: HSS83-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=250V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les e a sy


    OCR Scan     		PDF HSS83------------------------Silicon HSS83 HSS83

    200JH21

    Abstract: toshiba 3-60B1A
    Text: -_ 9097250 TOSHIBA 39C 02245 C D IS C R E T E / O P T O 0 7"- 0 3 - 2 3 FAST RECOVERY DIODE 0 SHIBA { D I S C R E T E / O P T 0> 200JH21 ln DËJ'iD^aSG 0002545 4 Unit in 600V 200A MAXIMUM RATINGS CHARACTERISTIC SY M B O L RATING UN IT Repetitive P eak R everse Voltage


    OCR Scan     		PDF 200JH21 30QJH21 Repeti25 toshiba 3-60B1A

    B159 diode

    Abstract: 6DI50B-050 le50a 6di50b B-159 M606
    Text: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s


    OCR Scan     		PDF 6DI50B-050 E82988 B-160 B159 diode le50a 6di50b B-159 M606

    sy 320 diode

    Abstract: No abstract text available
    Text: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode


    OCR Scan     		PDF BAT54W SA891 M80O46 sy 320 diode

    15FWJ11

    Abstract: 15GWJ11 30GWJ11 30FWJ11 AC23A
    Text: 9097250 TOSHIBA 39C CDI S C R E T E / O P T O 02257 7^ 03-^ 7 SCHOTTKY BARRIER DIODE Unit in nm 15GWJ11 40V 15A MAXIMUM RATINGS C H A R A C T E R IS T IC SY M B O L Repetitive Peak 15FWJ11 R everse Voltage 15GWJ11 RATING UNIT 30 V rrm 40 Average F o rw a rd C u rrent


    OCR Scan     		PDF 15GWJ11 15FWJ11 100Hz 3-11G1A 15GWJ11 30GWJ11 30FWJ11 AC23A

    toshiba 6jg11

    Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
    Text: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage


    OCR Scan     		PDF 6JG11 6BG11 6DG11 6FG11 6GG11 13Max. 3-11B1A 12BG11-12JG11 12BH11 toshiba 6jg11 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11

    ir20d

    Abstract: 3DH61 3JH61 1S2711 3GH61 3BH61
    Text: 9097250 TOSHIBA <D IS C R E T E / O P T O _ FAST RECOVERY DIODE 39C 0 2 2 4 2 DE I T G T T H S D TOSHIBA -CDISCRETE/0PT0} 1500V 1.5A 1S2711 O T ~ 6 3_-' * DDDE54S T Unit in am M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L U N IT R A T IN G


    OCR Scan     		PDF 1S2711 20diA, ir20d 3DH61 3JH61 1S2711 3GH61 3BH61

    E72445

    Abstract: 2500VRM
    Text: C a Y D O M Series M50 P A R Î NUMBER t&f N tlFJCA TIO N 50-100Amp SCR/DIODE MODULES • Over 40KW Output Capability ELECTRICAL SY M B O L Maximum Voltage Drop @ Am ps Peak vF • M SPECIFICATION M 5050 M 50100 1 .7 V 0 5OA I.4 V 100A U di/dt Critical Rate of Rise o f O n-State Current @ Tj=125’C A/(»


    OCR Scan     		PDF 50-100Amp 400VRRV1) 2500Vrm E72445) E72445

    30JG11

    Abstract: 30GG11 30BG11 30DG11 30FG11
    Text: 9 0 9 7 2 50 T O S H I B A CDI S C R E T E i O P T O > 39C FAST RECOVERY DIODE 02244 D d W ? DE I^D-iVESG 0 DD2244 2 | Unit in ui 600V 30A 3 Q JS Î1 ,Max -f* 20- M A X IM U M RATINGS C H A R A C T E R IS T IC SY M B O L RATING 30BG11 30DG11 R epetiiïïe Peak


    OCR Scan     		PDF 0DDZ244 30BG11 30DG11 30FG11 30GG11 30JG11 3-45A1A 30JG11 30GG11 30BG11 30DG11

    BUK454-400B

    Abstract: T0220AB PPD-25
    Text: N AMER b^E PHILIPS/DISCRETE D • hhS3^3l □□3Db2D BUK454-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,


    OCR Scan     		PDF hhS3131 BUK454-400B T0220AB BUK454-400B T0220AB PPD-25

    Schottky Rectifier 250V

    Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
    Text: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V


    OCR Scan     		PDF 2000V 0000V 0000V 00000V 10000V Schottky Rectifier 250V diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v