diode sy 200
Abstract: diode sy 180 10 diode sy 400 8 pnp 8 transistor array ttl transistor kp 18P4G 20P2N-A M63840FP M63840KP M63840P
Text: MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】 M63840P/FP/KP PRELIMINARY 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode ＊Notice: This is not a f inal specif ication. Some parametric limits are subject to change. DESCRIPT ION PIN CONFIGURATION （TOP VIEW）
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M63840P/FP/KP
500mA
M63840P/FP/KP
diode sy 200
diode sy 180 10
diode sy 400 8
pnp 8 transistor array ttl
transistor kp
18P4G
20P2N-A
M63840FP
M63840KP
M63840P
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JESD22-A114
Abstract: JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9600D PCA9600DP
Text: PCA9600 Dual bidirectional bus buffer Rev. 04 — 11 November 2009 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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PCA9600
PCA9600
P82B96.
JESD22-A114
JESD22-A115
JESD78
P82B96
PCA82C250
PCA9600D
PCA9600DP
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JESD22-A114
Abstract: JESD78 P82B96 PCA82C250 PCA9600 PCA9601 AN10658
Text: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
JESD22-A114
JESD78
PCA82C250
AN10658
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PCA9601
Abstract: AN10658 diode sy 104 JESD22-A114 JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9601DP
Text: PCA9601 Dual bidirectional bus buffer Rev. 01 — 28 May 2010 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
AN10658
diode sy 104
JESD22-A114
JESD22-A115
JESD78
PCA82C250
PCA9601DP
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Untitled
Abstract: No abstract text available
Text: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
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P82B96
Abstract: JESD22-A114 JESD78 PCA82C250 PCA9511A PCA9600 PCA9600D PCA9600DP AN10658
Text: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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PCA9600
PCA9600
P82B96.
P82B96
JESD22-A114
JESD78
PCA82C250
PCA9511A
PCA9600D
PCA9600DP
AN10658
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Untitled
Abstract: No abstract text available
Text: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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PCA9600
PCA9600
P82B96.
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF052SURCE HYPER RED EBLF052MGC MEGA GREEN EBLF052SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLF052SURCE
EBLF052MGC
EBLF052SYC
For12V
For28V
EA0339
EBLF052-2/2
SEP/21/2001
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 4mm FLANGE BASED LED LAMPS Package Dimensions EBLF041SURCE HYPER RED EBLF041MGC MEGA GREEN EBLF041SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSSCURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLF041SURCE
EBLF041MGC
EBLF041SYC
For12V
For28V
EA0337
EBLF041-2/2
SEP/21/2001
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF051SURCE HYPER RED EBLF051MGC MEGA GREEN EBLF051SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLF051SURCE
EBLF051MGC
EBLF051SYC
For12V
For28V
EA0338
EBLF051-2/2
SEP/21/2001
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Diode SY 350
Abstract: No abstract text available
Text: www.eLED.com 10mm SCREW BASED LED LAMPS Package Dimensions EBLS101MGC MEGA GREEN EBLS101SURCE HYPER RED EBLS101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLS101MGC
EBLS101SURCE
EBLS101SYC
For12V
For28V
EA0340
SEP/21/2001
EBLS101-2/2
Diode SY 350
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB102MGC MEGA GREEN EBLB102SURCE EBLB102SYC HYPER RED SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLB102MGC
EBLB102SURCE
EBLB102SYC
For12V
For28V
EA0330
SEP/21/2001
EBLB102-2/2
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4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
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4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
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Diode SY 350
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAILS Î FM M V105G - 4EZ ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C
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V105G
V/25V,
Diode SY 350
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TS01 DIODE
Abstract: 2232 R 012 S FJ CHEMICALS diode sy 200
Text: TLP270D TOSHIBA TENTATIVE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET /PHOTO-TRANSISTOR t• i p ? 7m n nmmr m M O BILE/N O TE PCs U n it in mm PDAs M ULTIM EDIA TVs 15141312 1110 M OD EM S TLP270D has many multi-functions in D A A circuits for modems,
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TLP270D
TLP270D
14pin
TS01 DIODE
2232 R 012 S
FJ CHEMICALS
diode sy 200
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"DIODE" SY 171 1 g
Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
Text: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise
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APT40M42BFN
APT35M42BFN
MIL-STD-750
"DIODE" SY 171 1 g
diode sy 171
Diode SY 345
diode sy 171 10
diode sy 170
"DIODE" SY 171 1
"DIODE" SY 171
ds 1494
1428m
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6P45S
Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D
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TGLIO395
III/I8/379
6P45S
6N23P
6P14P
Selenstab 5 GE 200 AF Hochsp.leitg
6F1P
service-mitteilungen
D814D
D814A
hsk 103
taa550
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C1685 transistor
Abstract: transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127
Text: GENL INSTR-i OPTOELEK flfl GÉNÉRAL INSTRUMENT DE | 3ÔT015Ô DOOETbT T | ~ VDE APPROVED p h o to tra n sisto r op toco u p le rs DVE PACKAGE DIMENSIONS [& eg] DESCRIPTION Æi r* { 6.86 .270 6.35 (.250) 0.36 (.014) I 0.20 (.008) O WWW T 8.89 (.350) 7.62
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C2090
C2079
MCT2200/0Z
MCT2201/1Z
MCT2202/2Z
MCT2200,
MCT2201
MCT2202
i012fl
C1684
C1685 transistor
transistor c1684
Cl684
MCT-2201
MCT2200
C1685
C1681
TRANSISTOR C1685
C1285
H127
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diode sy 171 10
Abstract: diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 APT40M42BFN Diode SY 350
Text: AD VA NC ED PO WE R T E C H N O L O G Y MIE D Hi □SST'JCH 0 0 0 0 5 0 8 AIO M A V P A dva n c ed P o w er ^ Tec h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEp*
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0000SÃ
APT40M42BFN
APT35M42BFN
97702-1035bol
MIL-STD-750
diode sy 171 10
diode sy 171
Diode SY 345
"DIODE" SY 171
"DIODE" SY 171 1
diode sy 170
LD 757 ps
SY 345
Diode SY 350
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK545-100A/B
BUK545
-100A
-100B
PINNING-SOT186
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APT40M80AFN
Abstract: APT35M80AFN
Text: ADVANCED POWER TECHN0L06Y 4^E □ BST'lD'l 0 0 0 0 5 0 4 D Op{2 tTB « A V P A dvanced > P : O W E R - i ~ - 3 ° ) - 1s Techno lo g y APT40M80AFN 400V58.0A 0.08f APT35M80AFN 350V 58.0A 0.08^ Ô S 2 ) POWER MOS IV N - CHANNEL ÈNHANCEMENT MODE HIGH VOLTAGE POWER MOSFE
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TECHN0L06Y
APT40M80AFN
APT35M80AFN
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes \\ PBYR1545CTX series schottky GENERAL DESCRIPTION Dual low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope, featuring low
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PBYR1545CTX
-SOT186A
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BUK455-400B
Abstract: T0220AB
Text: N ACIER P H I L I P S / D I S C R E T E b^E D • bhSBTBl 0D3GbS5 3 1 2 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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QQ30tiS5
BUK455-400B
T0220AB
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Untitled
Abstract: No abstract text available
Text: SILICON M O N O L I T H IC B IP O L A R D IG IT A L IN T E G R A T E D CIRCUIT TD62786AFN 8ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62786AFN is eight Channel Non-Inverting Source current Transistor Array. All units feature integral clamp diodes for switching inductive loads. Applications include
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TD62786AFN
TD62786AFN
P18PIN
500mA/ch
62786AFN
50/iS,
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