VUB145-16NOXT
Abstract: No abstract text available
Text: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC
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145-16NO1
E72873
20101007a
VUB145-16NOXT
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diode sy 160
Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
Text: 5mm FLANGE BASED LED LAMPS Features BLF051 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLF051
BLF051-V
MAR/01/2001
diode sy 160
diode sy 400
MG 12v diode
Diode SY 250
BLF051MGC-12V-P
BLF051MGC-24V-P
BLF051MGC-6V-P
BLF051SYC-12V-P
BLF051SYC-24V-P
BLF051SYC-6V-P
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diode sy 400
Abstract: diode sy 160 diode sy-250 BLF052MGC-12V-P BLF052MGC-24V-P BLF052MGC-6V-P BLF052SYC-12V-P BLF052SYC-24V-P BLF052SYC-6V-P MG 12v diode
Text: 5mm FLANGE BASED LED LAMPS Features BLF052 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLF052
BLF052-V
MAR/01/2001
diode sy 400
diode sy 160
diode sy-250
BLF052MGC-12V-P
BLF052MGC-24V-P
BLF052MGC-6V-P
BLF052SYC-12V-P
BLF052SYC-24V-P
BLF052SYC-6V-P
MG 12v diode
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diode sy 160
Abstract: diode sy Ic mega 16 BLB101SYC-12V-P BLB101SYC-24V-P BLB101SYC-6V-P BLB101MGC-12V-P BLB101MGC-24V-P BLB101MGC-6V-P
Text: 10mm BAYONET BASED LED LAMPS Features BLB101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLB101
BLB101-V
MAR/01/2001
diode sy 160
diode sy
Ic mega 16
BLB101SYC-12V-P
BLB101SYC-24V-P
BLB101SYC-6V-P
BLB101MGC-12V-P
BLB101MGC-24V-P
BLB101MGC-6V-P
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diode sy 160
Abstract: BLS101 BLS101MGC-12V-P BLS101MGC-24V-P BLS101MGC-6V-P BLS101SYC-12V-P BLS101SYC-24V-P BLS101SYC-6V-P
Text: 10mm SCREW BASED LED LAMPS Features BLS101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLS101
BLS101-V
MAR/01/2001
diode sy 160
BLS101MGC-12V-P
BLS101MGC-24V-P
BLS101MGC-6V-P
BLS101SYC-12V-P
BLS101SYC-24V-P
BLS101SYC-6V-P
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diode sy 160
Abstract: BLB102SYC-24V-P BLB102MGC-12V-P BLB102MGC-24V-P BLB102MGC-6V-P BLB102SYC-12V-P BLB102SYC-6V-P
Text: 10mm BAYONET BASED LED LAMPS Features BLB102 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLB102
BLB102-V
MAR/01/2001
diode sy 160
BLB102SYC-24V-P
BLB102MGC-12V-P
BLB102MGC-24V-P
BLB102MGC-6V-P
BLB102SYC-12V-P
BLB102SYC-6V-P
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diode sy 400
Abstract: BLF041MGC-12V-P BLF041MGC-24V-P BLF041MGC-6V-P BLF041SYC-12V-P BLF041SYC-24V-P BLF041SYC-6V-P
Text: 4mm FLANGE BASED LED LAMPS Features BLF041 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLF041
BLF041-V
MAR/01/2001
diode sy 400
BLF041MGC-12V-P
BLF041MGC-24V-P
BLF041MGC-6V-P
BLF041SYC-12V-P
BLF041SYC-24V-P
BLF041SYC-6V-P
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diode sy 200
Abstract: diode sy 170 diode sy 400 L-7676CSEC
Text: 7.6mm x7.6mm SUPER FLUX Kingbright L-7676CSEC L-7676SURC L-7676CSEC-E L-7676SURC-E L-7676CSYC Package Dimensions Features lSUPER FLUX OUTPUT. lDESIGN FOR HIGH CURRENT OPERATION. lOUTSTANDING MATERIAL EFFICIENCY. lRELIABLE AND RUGGED. Description The Super Bright Orange source color devices are made
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L-7676CSEC
L-7676CSEC-E
L-7676CSYC
L-7676SURC
L-7676SURC-E
2-L7676C-2
L-7676CSEC
L-7676CSEC-E
2-L7676C-3
L-7676CSYC
diode sy 200
diode sy 170
diode sy 400
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MARKING SY SOT23
Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330
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FLLD261
-200m
FLLD263
MARKING SY SOT23
SY SOT23
MARKING SOT23-3 LF
MARKING P8A
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4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
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4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
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Untitled
Abstract: No abstract text available
Text: HSS83-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=250V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les e a sy
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HSS83------------------------Silicon
HSS83
HSS83
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SY 625
Abstract: No abstract text available
Text: HSS82-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=200V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les ea sy
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HSS82------------------------Silicon
HSS82_
175istics
HSS82
SY 625
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diode sy 715
Abstract: No abstract text available
Text: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F
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cH7Q57Ã
001G35S
diode sy 715
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1SS119
Abstract: No abstract text available
Text: ADE-208-180A Z 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev, 1 Aug. 1995 Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time, (trr =3.5ns max) • Sm all g la ss p ackage (M H D ) en a b les ea sy
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ADE-208-180A
1SS119
1SS119
ISSI19
DO-34
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Diode SY 350
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAILS Î FM M V105G - 4EZ ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C
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V105G
V/25V,
Diode SY 350
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 3 1 0 2 -4 C ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150
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V/25V,
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B159 diode
Abstract: 6DI50B-050 le50a 6di50b B-159 M606
Text: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s
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6DI50B-050
E82988
B-160
B159 diode
le50a
6di50b
B-159
M606
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR CO M M O N CATHODE FMMD2837 I_ PIN C O N FIG U R A T IO N 1 n P A R T M A R K IN G D E T A IL S i k. j k F M M D 2 8 3 7 -A 5 3 3 MS ABSOLUTE MAXIMUM RATINGS PARAMETER SY M B O L Breakdown Voltage at Ir=100|jA
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FMMD2837
DS161
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11F2
Abstract: No abstract text available
Text: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H I IF fam ily con sists o f a g alliu m -a lu m in u m -a rse n k le in fra re d e m ittin g d io d e co u p led to a sy m m etrical b ila te ra l silicon p h o to d e te cto r.
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H11F1,
H11F2,
H11F3
11F2
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E72445
Abstract: 2500VRM
Text: C a Y D O M Series M50 P A R Î NUMBER t&f N tlFJCA TIO N 50-100Amp SCR/DIODE MODULES • Over 40KW Output Capability ELECTRICAL SY M B O L Maximum Voltage Drop @ Am ps Peak vF • M SPECIFICATION M 5050 M 50100 1 .7 V 0 5OA I.4 V 100A U di/dt Critical Rate of Rise o f O n-State Current @ Tj=125’C A/(»
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50-100Amp
400VRRV1)
2500Vrm
E72445)
E72445
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Untitled
Abstract: No abstract text available
Text: Product specification r iM p i uaffmeonouciora BAS17 Low-voltage stabistor FEA T U R ES PINNING • Low-voltage stabilization PIN • Forward voltage range: 580 to 960 mV 1 • Total power dissipation: max. 250 mW. D ESC R IPT IO N anode 2 not connected 3
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BAS17
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2N7016
Abstract: CIL TRANSISTOR LD070
Text: lflE D SILICONIX INC « yS ilicon ix 'Silîcor _ • A55M735 D01512S 2 2N7016 J U f ilincorporated - T -3 ° i-n P-C h a n n e l Enhancem ent M o d e T ra n sisto r 4-PIN DIP Similar to TO-250 TO P VIEW PRODUCT SUMMARY V(8R|DSS -60 r o y 1.0 1 Œ 2 C •o
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8SSM73S
QQ1512S
2N7016
O-250)
025473s
CIL TRANSISTOR
LD070
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Schottky Rectifier 250V
Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
Text: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V
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2000V
0000V
0000V
00000V
10000V
Schottky Rectifier 250V
diode 20000v
NX DIODE
schottky diode 800V
diode 50000v
Schottky diode high reverse voltage
gw diode
diode 10000v
diode schottky 900v
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C1685 transistor
Abstract: transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127
Text: GENL INSTR-i OPTOELEK flfl GÉNÉRAL INSTRUMENT DE | 3ÔT015Ô DOOETbT T | ~ VDE APPROVED p h o to tra n sisto r op toco u p le rs DVE PACKAGE DIMENSIONS [& eg] DESCRIPTION Æi r* { 6.86 .270 6.35 (.250) 0.36 (.014) I 0.20 (.008) O WWW T 8.89 (.350) 7.62
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C2090
C2079
MCT2200/0Z
MCT2201/1Z
MCT2202/2Z
MCT2200,
MCT2201
MCT2202
i012fl
C1684
C1685 transistor
transistor c1684
Cl684
MCT-2201
MCT2200
C1685
C1681
TRANSISTOR C1685
C1285
H127
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