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    DIODE SY 170 Search Results

    DIODE SY 170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SY 170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode sy 170

    Abstract: diode sy-170 diode sy 170/10 diode sy 170/2 L7676CSEC L7676CSURC L7676CSYC diode sy 170/20
    Text: 7.6mm x7.6mm SUPER FLUX Kingbright L7676CSEC L7676SURC L7676CSYC Package Dimensions Features !SUPER FLUX OUTPUT. !DESIGN FOR HIGH CURRENT OPERATION. !OUTSTANDING MATERIAL EFFICIENCY. !RELIABLE AND RUGGED. Description The Super Bright Orange source color devices are made


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    PDF L7676CSEC L7676SURC L7676CSYC L7676C-2 L7676C-3 L7676CSURC L7676C-4 diode sy 170 diode sy-170 diode sy 170/10 diode sy 170/2 L7676CSEC L7676CSURC L7676CSYC diode sy 170/20

    diode sy 200

    Abstract: diode sy 170 diode sy 400 L-7676CSEC
    Text: 7.6mm x7.6mm SUPER FLUX Kingbright L-7676CSEC L-7676SURC L-7676CSEC-E L-7676SURC-E L-7676CSYC Package Dimensions Features lSUPER FLUX OUTPUT. lDESIGN FOR HIGH CURRENT OPERATION. lOUTSTANDING MATERIAL EFFICIENCY. lRELIABLE AND RUGGED. Description The Super Bright Orange source color devices are made


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    PDF L-7676CSEC L-7676CSEC-E L-7676CSYC L-7676SURC L-7676SURC-E 2-L7676C-2 L-7676CSEC L-7676CSEC-E 2-L7676C-3 L-7676CSYC diode sy 200 diode sy 170 diode sy 400

    Untitled

    Abstract: No abstract text available
    Text: WPS-242717-02 2400 to 2700 MHz Linear Amplifier Preliminary Data Sheet June 2006 Features: • 45 dBm IP3 • 13 dB Gain • +28.0 dBm P1dB • Single Positive Bias • Leadless Surface Mount Package • EVM < 1.0% at 20 dBm MP S- 242 7 1702 Description: The WPS-242717-02 is a low cost high linearity modular amplifier designed to meet the ultra-linear transmitter driver


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    PDF WPS-242717-02 WPS-242717-02 CDMA2000,

    DXT170-71-1

    Abstract: DXT170 diode sy 164 SY100-68-A-20 SY114-5LOz diode sy 170 solenoid valve 24v SY Series SY100 VJ100-6-8
    Text: 3 Port Solenoid Valve Rubber Seal Series SY100 Low power consumption: 0.5W Standard, Without light (Current draw: 21mA at 24V DC) SY SYJ ∗Large flow capacity style:0.75W (Current draw: 31mA at 24V DC) VK Body width: 10mm VZ 7.85 Nl/min (Standard style)


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    PDF SY100 -100kPa SY100/ DXT170-71-1 DXT170 diode sy 164 SY100-68-A-20 SY114-5LOz diode sy 170 solenoid valve 24v SY Series SY100 VJ100-6-8

    Untitled

    Abstract: No abstract text available
    Text: T-1 3/4 5mm ROUND LED LAMP L-1703SURC HYPER RED Features Description !OUTSTANDING MATERIAL EFFICIENCY. The Hyper Red source color devices are made !RELIABLE AND RUGGED. with DH InGaAlP on GaAs substrate Light !I.C. COMPATIBLE. Emitting Diode. Package Dimensions


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    PDF L-1703SURC DSAD0450 FEB/23/2003 L-1703SURC

    Untitled

    Abstract: No abstract text available
    Text: T-1 3/4 5mm ROUND LED LAMP L-1703SURC-E HYPER RED Features Description !OUTSTANDING MATERIAL EFFICIENCY. The Hyper Red source color devices are made !RELIABLE AND RUGGED. with DH InGaAlP on GaAs substrate Light Emitting !I.C. COMPATIBLE. Diode. Package Dimensions


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    PDF L-1703SURC-E DSAD0451 FEB/23/2003 L-1703SURC-E

    Untitled

    Abstract: No abstract text available
    Text: T-1 3/4 5mm HYPER RED LED LAMP L-1703SURC HYPER RED L-1703SURC-E HYPER RED Features ! HYPER Description BRIGHTNESS. ! OUTSTANDING ! RELIABLE ! I.C. The Hyper Red source color devices are made with DH MATERIAL EFFICIENCY. AND RUGGED. InGaAlP on GaAs substrate Light Emitting Diode.


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    PDF L-1703SURC L-1703SURC-E KDA0309 SEP/16/2001 L-1703SURC L-1703SURC-E

    Untitled

    Abstract: No abstract text available
    Text: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C


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    PDF ZC2800E ZC2811E ZC5800E ZC2800E ZC2811E-E8 ZC5800E-E9

    "DIODE" SY 171

    Abstract: THZ3R3A05 thz010a10 THZ6R0A10 THZ013A05
    Text: ALLEGRO M IC RO SY ST E MS 8514019 S PR A G U E . INC ^3 D • GS0433Ô SEMICONDS/ IC S 00D3bED 93D R ■ 03620 _ ALGR T '- 't /"* DIODE CHIPS ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C @ZT mA Max. (m-A)


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    PDF GS0433Ô 00D3bED THZ025A05 THZ025A10 THZ027A05 THZ027A10 THZ028A05 THZ028A10 THZ030A05 THZ030A10 "DIODE" SY 171 THZ3R3A05 thz010a10 THZ6R0A10 THZ013A05

    Schottky Rectifier 250V

    Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
    Text: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V


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    PDF 2000V 0000V 0000V 00000V 10000V Schottky Rectifier 250V diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v

    ADV7120

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES 80 MHz Pipelined Operation Triple 8-Bit D/A Converters RS-343A/RS-170 Compatible Outputs TTL Compatible Inputs + 5 V CMOS Monolithic Construction 40-Pin DIP or 44-Pin PLCC Package Power Dissipation: 400 mW CMOS 80 MHz, Triple 8-Bit Video DAC


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    PDF RS-343A/RS-170 40-Pin 44-Pin ADV7120

    AOV453

    Abstract: "DIODE" SY 171 1 g
    Text: □ ANALOG DEVICES CMOS 66 MHz Monolithic 25 6x24 _ Color Palette RAM-DAC FEATURES 66MHz Pipelined Operation Triple 8-Bit D/A Converters 256x24 Color Palette RAM 3x24 Overlay Registers RS-343A/RS-170 Compatible Outputs +5V CMOS Monolithic Construction


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    PDF ADV453 66MHz 256x24 RS-343A/RS-170 40-Pin 44-Pin 1000mW 40MHz AOV453 "DIODE" SY 171 1 g

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY DIODE ARRAY SDA12 ISSU E 1 -A U G U S T 1996 DEVICE DESCRIPTION FEATURES The SD A 12 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise • Repetitive peak forward current - 200mA


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    PDF SDA12 200mA SDA12N8 SDA12D8

    diode sy 170

    Abstract: diode sy-170
    Text: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. Tne device is Intended for use In


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    PDF BUK581-60A OT223 diode sy 170 diode sy-170

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2h QQb43.31 432 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device Is Intended for use In


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    PDF 7110fl2h QQb43 BUK456-1000B T0220AB 7110fi2t. 00b4135

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES RGB to NTSC/PAL Encoder AD724 from a single + 5 V supply. No external delay lines or filters are required. T h e A D 724 may be powered down when not in use. FEATURES Low Cost, Integrated Solution +5 V Operation Accepts FSC Clock or Crystal, or 4FSC Clock


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    PDF AD724 16-Pin 16-Lead

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    BT453KP66

    Abstract: BT453KPJ
    Text: CMOS 66MHz Monolithic 256x24 Color Palette RAM-DAC DEC 2 6 'S31' ANALjOG D EVICES FEATURES 66MHz Pipelined Operation Triple 8-Bit D/A Converters 256x24 Color Palette RA M 3x24 Overlay Registers RS-343A/RS-170 Compatible Outputs + 5V C M O S Monolithic Construction


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    PDF 66MHz 256x24 256x24 RS-343A/RS-170 40-Pin 44-Pin 1000mW ADV453KN40 BT453KP BT453KP66 BT453KPJ

    SCHEMATIC ATI graphics card

    Abstract: schematic diagram video composite to vga schematic diagram vga to svideo RGB signal converting to vga standard 15 pin vga connector schematic diagram vga to composite 3A11 AD724 AD8073 ad724jr
    Text: ANALOG ► DEVICES RGB to NTSC/PAL Encoder AD724 from a single + 5 V supply. No external delay lines or filters are required. T he A D 724 may be powered down when not in use. FEATURES L o w C ost, In te g ra te d S o lu tio n +5 V O p e ra tio n Accepts FSC Clock or C rystal, o r 4FSC Clock


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    PDF AD724 16-Pin 16-Lead SCHEMATIC ATI graphics card schematic diagram video composite to vga schematic diagram vga to svideo RGB signal converting to vga standard 15 pin vga connector schematic diagram vga to composite 3A11 AD8073 ad724jr

    Halbleiterbauelemente DDR

    Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
    Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.


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    PDF DOR102 Halbleiterbauelemente DDR GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170

    Untitled

    Abstract: No abstract text available
    Text: I Actuator and Actuator-LED Terminal Blocks for Use with a Base Module 170 for Actuators with Ground Earth / Shield (Screen) Connection 0.08 - 1.5 m m 2 65 V/1.5 kV/3 O 6A AW G 28 - 16 Terminal block width 5 mm / 0.197 in 4_^ 9 - 1 0 mm / 0.37 in O


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    PDF 18-pole

    diode sy 171 10

    Abstract: diode sy 170/10
    Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,


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    PDF BYV40 OT223 BYV40- OT223. diode sy 171 10 diode sy 170/10

    TB62004P

    Abstract: TB62004F TB62004
    Text: SILICON MONOLITHIC Bi-CMOS INTEGRATED CIRCUIT TB62003P/F/FW/TB62004P/F/FW - TB62006P/F/FWJB62007P/F/FW TB62008P/F/FWJB62009P/F/FW 8CH D M O S TRANSISTOR ARRAY WITH GATE TB62003P, TB62003F, TB62003FW TB62003P, TB62004P TB62006P, T862007P TB62008P, TB62009P


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    PDF TB62003P/F/FW/TB62004P/F/FW TB62006P/F/FWJB62007P/F/FW TB62008P/F/FWJB62009P/F/FW TB62003P, TB62003F, TB62003FW TB62004P, TB62004F, TB62004FW TB62006P, TB62004P TB62004F TB62004

    Untitled

    Abstract: No abstract text available
    Text: EHXYS_ Rectifier Diode Avalanche Diodes ~ '~ 3 J vQDia = 1200 - 1800 v iF RMS = 7 A HRM I - 9 1 ‘ f (AV)M ~ v RSM V 1300 1700 1900 V » *, v rrM V V 1300 1750 1950 1200 1600 1800 A v a la n c h e Types D S 1 -1 2 D D S A 1 -1 2 D D S A 1 -1 6 D


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