VUB145-16NOXT
Abstract: No abstract text available
Text: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC
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145-16NO1
E72873
20101007a
VUB145-16NOXT
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Untitled
Abstract: No abstract text available
Text: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC
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116-16NO1
116-16N
E72873
20101007a
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JESD22-A114
Abstract: JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9600D PCA9600DP
Text: PCA9600 Dual bidirectional bus buffer Rev. 04 — 11 November 2009 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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PCA9600
PCA9600
P82B96.
JESD22-A114
JESD22-A115
JESD78
P82B96
PCA82C250
PCA9600D
PCA9600DP
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JESD22-A114
Abstract: JESD78 P82B96 PCA82C250 PCA9600 PCA9601 AN10658
Text: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
JESD22-A114
JESD78
PCA82C250
AN10658
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PCA9601
Abstract: AN10658 diode sy 104 JESD22-A114 JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9601DP
Text: PCA9601 Dual bidirectional bus buffer Rev. 01 — 28 May 2010 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
AN10658
diode sy 104
JESD22-A114
JESD22-A115
JESD78
PCA82C250
PCA9601DP
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Untitled
Abstract: No abstract text available
Text: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a
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PCA9601
PCA9601
P82B96
PCA9600
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KDA0385
Abstract: L-1043GD L-1043ID L-1043SGD L-1043SRD L-1043YD L1043S
Text: 3.65x6.15mm SINGLE CHIP LED LIGHT BARS L-1043ID HIGH EFFICIENCY RED L-1043GD GREEN L-1043YD YELLOW L-1043SRD SUPER BRIGHT RED L-1043SGD SUPER BRIGHT GREEN Features Description !FLAT The High Efficiency Red source color devices are made with RECTANGULAR LIGHT EMITTING SURFACE.
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L-1043ID
L-1043GD
L-1043YD
L-1043SRD
L-1043SGD
KDA0385
SEP/19/2001
KDA0385
L-1043GD
L-1043ID
L-1043SGD
L-1043SRD
L-1043YD
L1043S
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P82B96
Abstract: JESD22-A114 JESD78 PCA82C250 PCA9511A PCA9600 PCA9600D PCA9600DP AN10658
Text: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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PCA9600
PCA9600
P82B96.
P82B96
JESD22-A114
JESD78
PCA82C250
PCA9511A
PCA9600D
PCA9600DP
AN10658
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Untitled
Abstract: No abstract text available
Text: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a
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PCA9600
PCA9600
P82B96.
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DXT170-71-1
Abstract: DXT170 diode sy 164 SY100-68-A-20 SY114-5LOz diode sy 170 solenoid valve 24v SY Series SY100 VJ100-6-8
Text: 3 Port Solenoid Valve Rubber Seal Series SY100 Low power consumption: 0.5W Standard, Without light (Current draw: 21mA at 24V DC) SY SYJ ∗Large flow capacity style:0.75W (Current draw: 31mA at 24V DC) VK Body width: 10mm VZ 7.85 Nl/min (Standard style)
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SY100
-100kPa
SY100/
DXT170-71-1
DXT170
diode sy 164
SY100-68-A-20
SY114-5LOz
diode sy 170
solenoid valve 24v
SY Series
SY100
VJ100-6-8
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Untitled
Abstract: No abstract text available
Text: Type BSS131 SIPMOS Small-Signal-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 240 V RDS on ,max 14 Ω ID 0.1 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Qualified according to AEC Q101
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BSS131
PG-SOT-23
IEC61249-2-21
PG-SOT23
H6327
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89LPC93
Abstract: an10148 002aab988
Text: P82B96 Dual bidirectional bus buffer Rev. 08 — 10 November 2009 Product data sheet 1. General description The P82B96 is a bipolar IC that creates a non-latching, bidirectional, logic interface between the normal I2C-bus and a range of other bus configurations. It can interface
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P82B96
P82B96
771-P82B96TD
P82B96TD
89LPC93
an10148
002aab988
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89lpc932
Abstract: AN10148 JESD22-A114 JESD22-A115 P82B96 P82B96DP P82B96PN P82B96TD PCA82C250
Text: P82B96 Dual bidirectional bus buffer Rev. 08 — 10 November 2009 Product data sheet 1. General description The P82B96 is a bipolar IC that creates a non-latching, bidirectional, logic interface between the normal I2C-bus and a range of other bus configurations. It can interface
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P82B96
P82B96
89lpc932
AN10148
JESD22-A114
JESD22-A115
P82B96DP
P82B96PN
P82B96TD
PCA82C250
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Untitled
Abstract: No abstract text available
Text: 3.65x6.15mm SINGLE CHIP LED LIGHT BAR L-1043GD GREEN Features Description ! FLAT The Green source color devices are made with Gallium RECTANGULAR LIGHT EMITTING SURFACE. ! SINGLE ! IDEAL COLOR. ! EXCELLENT ! LONG ! THE ON/OFF CONTRAST. LIFE - SOLID STATE RELIABILITY.
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L-1043GD
DSAB2484
DEC/05/2002
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Untitled
Abstract: No abstract text available
Text: 3.65x6.15mm SINGLE CHIP LED LIGHT BAR L-1043SGD SUPER BRIGHT GREEN Features Description !FLAT RECTANGULAR LIGHT EMITTING SURFACE. The Super Bright Green source color devices are made !SINGLE COLOR. with Gallium Phosphide Green Light Emitting Diode. !IDEAL AS FLUSH MOUNTED PANEL INDICATORS.
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L-1043SGD
DSAA3573
MAR/15/2003
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Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY KPSC56-104 Description Features !0.56INCH SUPER BRIGHT RED DIGIT HEIGHT. The Super Bright Red source color devices are made !LOW CURRENT OPERATION. with Gallium Aluminum Arsenide Red Light Emitting !EXCELLENT Diode. CHARACTER APPEARANCE.
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KPSC56-104
56INCH
800PCS/
DSAA6033
NOV/21/2002
KPSC56-104
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY KPSC04-104 SUPER BRIGHT RED Features Description !0.4INCH The Super Bright Red source color devices are made DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT with Gallium Aluminum Arsenide Red Light Emitting Diode. CHARACTER APPEARANCE.
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KPSC04-104
800PCS
DSAA6031
NOV/16/2002
KPSC04-104
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KPBA03-104
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY KPBA03-104 Features !0.3 INCH !LOW Description DIGIT HEIGHT. The Super Bright Red source color devices are made CURRENT OPERATION. !EXCELLENT CHARACTER APPEARANCE. !MECHANICALLY with Gallium Aluminum Arsenide Red Light Emitting Diode.
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KPBA03-104
800PCS/REEL.
DSAD0097
DEC/25/2002
KPBA03-104
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY KPDC56-104 SUPER BRIGHT RED Features Description ! 0.56 The Super Bright Red source color devices are made INCH DIGIT HEIGHT. !LOW CURRENT OPERATION. !EXCELLENT with Gallium Aluminum Arsenide Red Light Emitting CHARACTER APPEARANCE. Diode.
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KPDC56-104
400PCS
DSAD0210
DEC/28/2002
KPDC56-104
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sy 320 diode
Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren
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diode sy 200
Abstract: UCM0J
Text: P h ilip * S e m ic o n d u c to r* Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATU RES • Minimum 2 mm Isolation thickness between emitter and receiver • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm
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CNW11AV-1/2/3
E90700
bbS3S31
D03533L
MCB902
bb53T31
diode sy 200
UCM0J
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes . BYV72E series ultrafast, GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency rugged dual rectifier diodes in a
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BYV72E
100recovery
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diode sy 104
Abstract: diode sy 180 10 uc 18 yg
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,
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PHP26N10E
T0220AB
diode sy 104
diode sy 180 10
uc 18 yg
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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