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    DIODE SUBSTITUTION Search Results

    DIODE SUBSTITUTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SUBSTITUTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IDG 600

    Abstract: M61880FP 20P2N-A M61880
    Text: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.


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    PDF M61880FP REJ03F0068-0100Z M61880FP IDG 600 20P2N-A M61880

    SML-010

    Abstract: No abstract text available
    Text: DEMO MANUAL DC2060A LTC4229 Single Ideal Diode and Hot Swap Controller Description Demonstration circuit 2060A is a single-rail circuit with an ideal diode and Hot Swap functionality provided by the LTC 4229, ideal diode and Hot Swap controller. The main components of this circuit are two series connected


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    PDF DC2060A LTC4229 DC2060A LTC4229 dc2060af SML-010

    supercap

    Abstract: DC1589A DC1589 hs206 LTC4425EDD LED monitor circuit diagram BAT54C HS206F supercap charge
    Text: QUICK START GUIDE FOR DC1589A LTC4425EDD: Linear Supercap Charger With Current-Limited Ideal Diode And V/I Monitor DESCRIPTION Demonstration Circuit DC1589A is a Linear Supercap Charger with Current-Limited Ideal Diode and V/I Monitor, featuring the LTC 4425.


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    PDF DC1589A LTC4425EDD: DC1589A 1/16W LTC4425EDD supercap DC1589 hs206 LTC4425EDD LED monitor circuit diagram BAT54C HS206F supercap charge

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1899A LTC4228-1/LTC4228-2 Dual Ideal Diode and Hot Swap Controller DESCRIPTION Demonstration circuit 1899A controls two independent power rail circuits each with Hot Swap and ideal diode functionality provided by the LTC4228-1/LTC4228-2 dual


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    PDF DC1899A LTC4228-1/LTC4228-2 LTC4228-1/LTC4228-2 DC1899A LTC4228 dc1899af

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1926A Dual Ideal Diode Controller DESCRIPTION Demonstration circuit 1926A features the LTC4353, a dual low voltage ideal diode controller, in a typical 12A application. The LTC4353 creates two near-ideal diodes using external N-channel MOSFETs thereby replacing high


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    PDF DC1926A LTC4353, LTC4353 dc1926af

    LT4320

    Abstract: SML-010
    Text: DEMO MANUAL DC1902B LT4320 Ideal Diode Bridge Controller Description Demonstration circuit 1902B features the ideal diode bridge controller LT 4320 suitable for applications that require low to medium current AC to DC full-wave rectification or DC polarity correction and a small compact solution


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    PDF DC1902B LT4320 1902B LT4320 dc1902bf SML-010

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    PSD300-200

    Abstract: Power Snubber Diode
    Text: SIYU R PSD300-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化,高可靠性 Miniaturization,High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


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    PDF PSD300-200 DO15L PSD300-200 Power Snubber Diode

    PSD200-170

    Abstract: Power Snubber Diode
    Text: SIYU R PSD200-170 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化,高可靠性 Miniaturization,High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


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    PDF PSD200-170 PSD200-170 Power Snubber Diode

    PSD300-82

    Abstract: Power Snubber Diode 6.7V Zener Diode
    Text: SIYU R PSD300-82 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化,高可靠性 Miniaturization,High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


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    PDF PSD300-82 DO15L PSD300-82 Power Snubber Diode 6.7V Zener Diode

    PSD200-82

    Abstract: Power Snubber Diode 6.7V Zener Diode
    Text: SIYU R PSD200-82 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化,高可靠性 Miniaturization,High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


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    PDF PSD200-82 PSD200-82 Power Snubber Diode 6.7V Zener Diode

    PSD200-200

    Abstract: Power Snubber Diode
    Text: SIYU R PSD200-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化,高可靠性 Miniaturization,High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


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    PDF PSD200-200 PSD200-200 Power Snubber Diode

    PSD300-170

    Abstract: Power Snubber Diode
    Text: SIYU R PSD300-170 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化,高可靠性 Miniaturization,High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


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    PDF PSD300-170 DO15L PSD300-170 Power Snubber Diode

    Untitled

    Abstract: No abstract text available
    Text: InGaAlP-High Brightness-Lumineszenzdiode 570 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (570 nm, High Optical Power) F 2003B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


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    PDF 2003B 2003B

    Untitled

    Abstract: No abstract text available
    Text: InGaAlP-High Brightness-Lumineszenzdiode 560 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (560 nm, High Optical Power) F 2004B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


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    PDF 2004B

    2000A power diode

    Abstract: c1447 Q-67220-C1447
    Text: InGaAlP-High Brightness-Lumineszenzdiode 617 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


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    Untitled

    Abstract: No abstract text available
    Text: InGaAlP-High Brightness-Lumineszenzdiode 605 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (605 nm, High Optical Power) F 2001A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


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    Untitled

    Abstract: No abstract text available
    Text: InGaAlP-High Brightness-Lumineszenzdiode 605 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (605 nm, High Optical Power) F 2001A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


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    LCD 2002a

    Abstract: c1449 C1449 transistor LCD+2002a 2002A
    Text: InGaAlP-High Brightness-Lumineszenzdiode 587 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (587 nm, High Optical Power) F 2002A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


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    DIODE 630

    Abstract: C1446
    Text: InGaAlP-High Brightness-Lumineszenzdiode 630 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


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    AT 2003b

    Abstract: No abstract text available
    Text: InGaAlP-High Brightness-Lumineszenzdiode 570 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (570 nm, High Optical Power) F 2003B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


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    PDF 2003B AT 2003b

    l7949

    Abstract: HP STEP RECOVERY DIODES
    Text: Xhfíl PACKARD APPLICATION NOTE 989 Step Recovery Diode Doubler INTRODUCTION A straightforw ard technique fo r m ultip lie r design is pres­ ented. The in p u t c irc u it is a low pass filte r w hich allows all of the in pu t pow er to be absorbed by the diode and reflects


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    PDF D-7030 l7949 HP STEP RECOVERY DIODES

    nec 2741

    Abstract: PS2741
    Text: DATA SHEET NEC PHOTO COUPLER PS2741 ELECTRON DEVICE H IG H SPEED M IN I FLAT PHOTO COUPLER PS2741 is a 5-pin high speed photo coupler containing a GaAIAs red light em ittin g diode for a light em itting device on input side and a P-N photo diode and a high speed am plifier transistor on output side on one chip.


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    PDF PS2741 PS2741 PS2741-E4 PS2741-F4 PS2741-E3, PS2741-F3, nec 2741

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492