thyristor AEG t 10 n 600
Abstract: Siemens diode Ssi L28 siemens BSt P45 SIEMENS BST n61 SIEMENS BST siemens ssi k38 diode ssi L28 SIEMENS BST L35 SIEMENS BST p49 thyristor aeg
Text: Cross reference list I Components of eupec with high power and/or high reverse voltage mainly come from the former Siemens programme, however, in future with new type designation: Si emensDesignation eupecDesignation Phase control thyristors BSt R68L BSt T65
|
OCR Scan
|
|
PDF
|
MPC8610EC
Abstract: MC8610 marking code V6 74 surface mount diode marking ss24 PCI express PCB footprint B12 IC marking code circuit diagram of LCD connection to pic marking code V6 DIODE marking code V6 surface mount diode marking v6 78 diode
Text: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 0, 10/2008 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files
|
Original
|
MPC8610EC
MPC8610
32-bit
32-Kbyte
256-Kbyte,
36-bit
72-bit
533-MHz
MPC8610EC
MC8610
marking code V6 74 surface mount diode
marking ss24
PCI express PCB footprint
B12 IC marking code
circuit diagram of LCD connection to pic
marking code V6 DIODE
marking code V6 surface mount diode
marking v6 78 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files
|
Original
|
MPC8610EC
MPC8610
32-bit
32-Kbyte
256-Kbyte,
36-bit
72-bit
|
PDF
|
arco ss32 capacitor
Abstract: diode ssi L28 PCI express PCB footprint AH10 SS33 E6005 SS44 marking SS44 marking code MPC8610 marking code V6 74 surface mount diode MPC8610EC
Text: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files
|
Original
|
MPC8610EC
MPC8610
32-bit
32-Kbyte
256-Kbyte,
36-bit
72-bit
533-MHz
arco ss32 capacitor
diode ssi L28
PCI express PCB footprint
AH10 SS33
E6005
SS44 marking
SS44 marking code
marking code V6 74 surface mount diode
MPC8610EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)
|
Original
|
PC8610
0926D
|
PDF
|
PC8610
Abstract: microprocessor
Text: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)
|
Original
|
PC8610
0926Bâ
PC8610
microprocessor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SURC-E-28V-P HYPER RED Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. with DH InGaAlP on GaAs substrate Light lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT l LONG LIFE. l LOW CURRENT, POWER SAVINGS. lLOW MAINTENANCE.
|
Original
|
BLB101SURC-E-28V-P
DSAA8834
FEB/22/2005
BLB101SURC-E-28V-P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLF052SURC-E-28V-P HYPER RED Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. InGaAlP on GaAs substrate Light Emitting Diode. lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. The Hyper Red source color devices are made with DH
|
Original
|
BLF052SURC-E-28V-P
DSAA8825
FEB/26/2005
BLF052SURC-E-28V-P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLF052MGC-28V-P MEGA GREEN Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. with DH InGaAlP on GaAs substrate Light Emitting lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. lLOW CURRENT, POWER SAVINGS. The Mega Green source color devices are made
|
Original
|
BLF052MGC-28V-P
DSAD0372
FEB/21/2005
BLF052MGC-28V-P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLF052SYC-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG LIFE. SUPER BRIGHT YELLOW Description The Super Bright Yellow device is made with DH InGaAlP on GaAs substrate light emitting diode chip.
|
Original
|
BLF052SYC-28V-P
DSAA8831
FEB/21/2005
BLF052SYC-28V-P
|
PDF
|
BLFA054MGCK-28V
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLFA054MGCK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW MEGA GREEN Description The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
|
Original
|
BLFA054MGCK-28V
DSAD1596
APR/08/2003
BLFA054MGCK-28V
|
PDF
|
BLFA054SECK-28V
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLFA054SECK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. l LONG l LOW LIFE. SUPER BRIGHT ORANGE Description The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light
|
Original
|
BLFA054SECK-28V
DSAD1590
APR/08/2003
BLFA054SECK-28V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLFA054MGCK-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW MEGA GREEN Description The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
|
Original
|
BLFA054MGCK-28V-P
DSAD0384
MAR/22/2003
BLFA054MGCK-28V-P
|
PDF
|
BLFA054SURCK28V
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLFA054SURCK28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. l LONG l LOW HYPER RED Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
|
Original
|
BLFA054SURCK28V
DSAD1587
APR/08/2003
BLFA054SURCK28V
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLFA054MBC-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW LIFE. l SOLID Description The Blue source color devices are made with GaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS. It is
|
Original
|
BLFA054MBC-28V-P
DSAD0386
MAR/22/2003
BLFA054MBC-28V-P
|
PDF
|
BLFA054SYCK-28V
Abstract: No abstract text available
Text: 5mm FLANGE BASED LED LAMP BLFA054SYCK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW LIFE. SUPER BRIGHT YELLOW Description The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate
|
Original
|
BLFA054SYCK-28V
DSAD1593
APR/08/2003
BLFA054SYCK-28V
|
PDF
|
pin vga CRT pinout
Abstract: samsung* lpddr2 LPDDR2-800 i.MX53 PCIMX535DVV1C emmc DDR pcb layout Samsung eMMC 4.41 LPDDR2 PoP JESD209-2 flexcan2
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 3, 7/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm
|
Original
|
IMX53CEC
MCIMX53xD
MX53xD
pin vga CRT pinout
samsung* lpddr2
LPDDR2-800
i.MX53
PCIMX535DVV1C
emmc DDR pcb layout
Samsung eMMC 4.41
LPDDR2 PoP
JESD209-2
flexcan2
|
PDF
|
DDR3 phy 100 pin diagram
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 1, 3/2011 MCIMX53xD This document contains information on a new product. Specifications and information herein are subject to change without notice. i.MX53xD Applications
|
Original
|
IMX53CEC
MCIMX53xD
MX53xD
DDR3 phy 100 pin diagram
|
PDF
|
SCIMX538DZK1C
Abstract: samsung eMMC 4.5 MCIMX535 emmc pcb layout lpddr2 pcb layout LPDDR2 PoP samsung* lpddr2* pop package N7U2 Freescale i.MX53 Quick Start Board AMBA AXI
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4.1, 2/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch
|
Original
|
IMX53CEC
MCIMX53xD
MX53xD
SCIMX538DZK1C
samsung eMMC 4.5
MCIMX535
emmc pcb layout
lpddr2 pcb layout
LPDDR2 PoP
samsung* lpddr2* pop package
N7U2
Freescale i.MX53 Quick Start Board
AMBA AXI
|
PDF
|
MCIMX535
Abstract: MCIMX535DVV1C MCIMX535DVV IMX53CEC mc33902 tepbga-2 MCIMX538DZK1C H.263 *IMX53 emmc pcb layout
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4, 11/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch
|
Original
|
IMX53CEC
MCIMX53xD
MX53xD
MCIMX535
MCIMX535DVV1C
MCIMX535DVV
mc33902
tepbga-2
MCIMX538DZK1C
H.263
*IMX53
emmc pcb layout
|
PDF
|
eMMC "thermal impedance"
Abstract: PCIMX535DVV1C emmc Card connector 062N n78c 4.712 eMMC PoP emmc pcb layout 100KPD diode 4.7-16
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 2, 5/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm
|
Original
|
IMX53CEC
MCIMX53xD
MX53xD
DDR2/LVDDR2-800,
eMMC "thermal impedance"
PCIMX535DVV1C
emmc Card connector
062N
n78c
4.712
eMMC PoP
emmc pcb layout
100KPD
diode 4.7-16
|
PDF
|
lpddr2 spec
Abstract: tablet mid SAMSUNG RF MODULATORS MLC nand 2012 emmc DDR3 pcb layout MCIMX535DVV1C emmc 4.5 samsung samsung eMMC 5.1 H 204 TK1 SCIMX
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX53CEC Rev. 5, 12/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch
|
Original
|
IMX53CEC
MCIMX53xD
MX53xD
lpddr2 spec
tablet mid
SAMSUNG RF MODULATORS
MLC nand 2012
emmc DDR3 pcb layout
MCIMX535DVV1C
emmc 4.5 samsung
samsung eMMC 5.1
H 204 TK1
SCIMX
|
PDF
|
SCIMX
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4.1, 2/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch
|
Original
|
IMX53CEC
MCIMX53xD
MX53xD
SCIMX
|
PDF
|
MCIMX535
Abstract: emmc DDR3 pcb layout samsung eMMC 4.5 eMMC 4.4 eMMC rja rjc emmc Pin assignment samsung NAND Flash DIE i.mx53 samsung eMMC 5.0 SCIMX
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX53CEC Rev. 6, 03/2013 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch
|
Original
|
IMX53CEC
MCIMX53xD
MX53xD
MCIMX535
emmc DDR3 pcb layout
samsung eMMC 4.5
eMMC 4.4
eMMC rja rjc
emmc Pin assignment
samsung NAND Flash DIE
i.mx53
samsung eMMC 5.0
SCIMX
|
PDF
|
