si96
Abstract: No abstract text available
Text: SEMTECH Today*« Rauiki.1 March 18, 1999 RailClamp Low Capacitance TVS Diode Array SR05 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to protect high speed data intertaces. The SR series has
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TEL805-498-2111
OT-143
CA91320
si96
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 1310 nm FOR LONG HAUL 2.5 Gb/s NX7315 InGaAsP MQW-FP LASER DIODE TOSA 0.6 mW SERIES FEATURES DESCRIPTION • FOR MAN AND LAN APPLICATIONS SDH I-16, SONET OC-48(SR) The NX7315 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode transmitter
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NX7315
OC-48
NX7315
STM-16
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TOSA MQW Laser diode SFP
Abstract: GR-468-CORE NX7312UA NX7312UB STM-16 GR-468-CORE SFP
Text: PRELIMINARY DATA SHEET 1310 nm FOR LONG HAUL 2.5 Gb/s NX7315 InGaAsP MQW-FP LASER DIODE TOSA 0.6 mW SERIES FEATURES DESCRIPTION • FOR MAN AND LAN APPLICATIONS SDH I-16, SONET OC-48(SR) The NX7315 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode transmitter
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NX7315
OC-48
NX7315
STM-16
TOSA MQW Laser diode SFP
GR-468-CORE
NX7312UA
NX7312UB
GR-468-CORE SFP
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Untitled
Abstract: No abstract text available
Text: International SR ectifier Preliminary Data Sheet PD -2.449 HFA320NJ40C Ultrafast, Soft Recovêry Diode HEXFRED LUG TERMINAL ANODE 1 Features LUG TERMNAL ANODE2 Vr = 400V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters
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HFA320NJ40C
2600nC
Liguria49
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MSD700
Abstract: MSD7000 1n3600 die
Text: »Ë~|b3b7S55 | 6367255 □□ 3 0 1 1 4 MOTOROLA t. SC CD I O D E S / O P T O 34C 3811^ oj-o SILICON SWITCHING DIODE DIE continued) sr 1C914 DIE NO. UNE SOURCE — DSD241 This die provides performance equal to or better than that of the following device types:
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b3b7S55
DSD241
1N914
1N3600
MMD6050
MMD7000
MSD7000*
1C914
MSD700
MSD7000
1n3600 die
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QSH-030-01-L-D-A
Abstract: QTH-030-01-L-D-A v23816n1018l312a C312 GR-253 V23816-N1018-C312-A V23816-N1018-L312-A
Text: Fiber Optics 3.3 V, 4-Line LVDS Parallel 2.5 GBd Transponder OC-48 SONET/SDH Short Reach SR up to 2 km V23816-N1018-C312-A V23816-N1018-L312-A Preliminary Data Features • Compliant with existing standards • Compact integrated transponder unit with – FP laser diode transmitter
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OC-48
V23816-N1018-C312-A
V23816-N1018-L312-A
QSH-030-01-L-D-A
QTH-030-01-L-D-A
v23816n1018l312a
C312
GR-253
V23816-N1018-C312-A
V23816-N1018-L312-A
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: f f iH ü x '/W x y 3 y h V7 Surface Mounting Device ^ —K Schottky Barrier Diode Single Diode IW B tfä c E l D2FS6 OUTLINE DIMENSIONS Case : 2F o-w 60V 1.5A i} J ° ® hV 5» •/JvffiSM D • T j 150TC •PnnsM T l ^ y - y x U U I 1 • SR®S •D C /D C U V A - ?
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150TC
SHINDENGEN DIODE
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diode sg 08
Abstract: BL0709-18-349 PB25
Text: 28mmX28mm LED CLUSTER ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0709-18-349 SUPER BRIGHT RED BLUE SUPER BRIGHT GREEN PRELIMINARY SPEC Description Features HIGH VISIBILITY. The Super Bright Red source color devices are made
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28mmX28mm
BL0709-18-349
DSAE5810
JAN/08/2005
diode sg 08
BL0709-18-349
PB25
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC34981 Rev. 1.0, 7/2013 Single High Side Switch 4.0 mOhm , PWM clock up to 60 kHz 34981 Industrial The 34981 is a high frequency, self-protected 4.0 m RDS(ON) high side switch used to replace electromechanical relays, fuses, and
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MC34981
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC34981 Rev. 2.0, 9/2013 Single High Side Switch 4.0 mOhm , PWM clock up to 60 kHz 34981 Industrial The 34981 is a high frequency, self-protected 4.0 m RDS(ON) high side switch used to replace electromechanical relays, fuses, and
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MC34981
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BM13E4G-1-TRS25.5A END-LOOK PACKAGE INFRARED EMITTING DIODE Package Dimensions: 5.7 .224 5.0(.197) 8.6(.34) Features: H2 Anode 1. High radiant power and high radiant intensity. 2. Standard T-1 3/4(5mm)package. H1
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BIR-BM13E4G-1-TRS25
940nm.
H1------25
L------11
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Untitled
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BM13E4G-2-TRS25.5A Package Dimensions: END-LOOK PACKAGE INFRARED EMITTING DIODE 5.0 .197 5.7(.224) 8.6(.34) Features: H2 1. High radiant power and high radiant intensity. H1 W2 Anode 2. Standard T-1 3/4(5mm)package.
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BIR-BM13E4G-2-TRS25
940nm.
H1------25
L------11
54ell
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BIR-BM13E4G-2-TRS25
Abstract: diode W240
Text: BRIGHT LED ELECTRONICS CORP. BIR-BM13E4G-2-TRS25.5A SINCE 1981 END-LOOK PACKAGE INFRARED EMITTING DIODE z Package Dimensions: 5.0 .197 P2 5.7(.224) 8.6(.34) z Features: H2 1. High radiant power and high radiant intensity. H1 W2 Anode 2. Standard T-1 3/4(5mm)package.
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BIR-BM13E4G-2-TRS25
940nm.
H1------25
L------11
P-----------12
50ifications
diode W240
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8582
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BIR-BM13E4G-1-TRS25.5A SINCE 1981 END-LOOK PACKAGE INFRARED EMITTING DIODE z Package Dimensions: 5.7 .224 5.0(.197) P2 8.6(.34) z Features: H2 Anode 1. High radiant power and high radiant intensity. 2. Standard T-1 3/4(5mm)package.
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BIR-BM13E4G-1-TRS25
940nm.
H1------25
L------11
P-----------12
8582
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SIR-34ST3F
Abstract: No abstract text available
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking
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SIR-34ST3F
SIR-34ST3F
950nm
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Untitled
Abstract: No abstract text available
Text: ADP1043A Evaluation Board Forward Active Clamp PRD 1168 Reference Design FEATURES Forward Active Clamp with Synchronous rectifier Voltage Feedback Loop Dimensions: 58.4mmx61mm×12mm Half Brick Input Voltage Range: -34V to -60V DC Output Voltage/Current: 18V/6A DC
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ADP1043A
-34to
-60VDC
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SIR-341ST3F
Abstract: No abstract text available
Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide
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SIR-341ST3F
SIR-341ST3F
940nm
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toy IR remote control circuit diagram
Abstract: Emitting SIR-34ST3F
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-34ST3F
SIR-34ST3F
950nm
toy IR remote control circuit diagram
Emitting
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toy IR remote control circuit diagram
Abstract: SIR-341ST3F 940NM data sheet
Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide
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SIR-341ST3F
SIR-341ST3F
940nm
toy IR remote control circuit diagram
940NM data sheet
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Untitled
Abstract: No abstract text available
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking
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SIR-34ST3F
SIR-34ST3F
950nm
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diode d502
Abstract: diode Schottky D501
Text: AN3303 Application note Secondary-side rectification for an LLC resonant converter featuring the SRK2000 Introduction The EVLSRK2000 is a family of demonstration boards designed for the evaluation of the SRK2000 in LLC resonant converters with synchronous rectification SR .
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AN3303
SRK2000
EVLSRK2000
SRK2000
diode d502
diode Schottky D501
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Untitled
Abstract: No abstract text available
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-34ST3F
SIR-34ST3F
950nm
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SIR-34ST3F
Abstract: No abstract text available
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-34ST3F
SIR-34ST3F
950nm
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Untitled
Abstract: No abstract text available
Text: T-1 3mm INFRARED EMITTING DIODE Part Number: L-34F3BT Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).
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L-34F3BT
DSAA4947
APR/16/2013
MA4947
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