GL5ZS44
Abstract: No abstract text available
Text: ELECTRONIC x ', / /d / $5 . I 777 .wrza* f COMPONENTS GROUP SHARPCORPORATION Opto-Electronic SPECIFICATION DEVICE SPECIFICATION Devices Division FOR Emitting Diode MODEL No. GL5ZS44 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .
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GL5ZS44
GL5ZS44
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DIODE WJ SOD323
Abstract: BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S
Text: BL Galaxy Electrical Production specification Surface mount zener diode FEATURES BZT52C2V0S-BZT52C39S Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode.
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BZT52C2V0S-BZT52C39S
OD-323
BZT52C2V4S-BZT52C51S
BL/SSZDB019
DIODE WJ SOD323
BZT52C2V0S
BZT52C2V0S-BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
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60F5
Abstract: 2600C GL5UR44
Text: SHARP ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION / \, DEVICE SPECIFICATION FOR Light emitting diode Lamp I MODEL No, GL5UR44 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”), Please keep them with reasonable care as important information. Please do not reproduce
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GL5UR44
40kHz
60F5
2600C
GL5UR44
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74F776 Pi-bus transceiver Product specification IC15 Data Handbook Philips Semiconductors 1990 Dec 19 Philips Semiconductors Product specification Pi–bus transceiver 74F776 FEATURES consumption and a series diode on the drivers to reduce capacitive
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74F776
100mA)
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1N7037
Abstract: 1N7043 1N7043CAT1 1N7043CCT1 15CLQ100 1N7037CCU1 Schottky jans
Text: INCH-POUND MIL-PRF-19500/730 6 September 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments
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MIL-PRF-19500/730
1N7037CCU1,
1N7043CAT1,
1N7043CCT1,
MIL-PRF-19500.
O-254AA)
Maximu43218-3990
15CGQ100
15JGQ100
1N7037
1N7043
1N7043CAT1
1N7043CCT1
15CLQ100
1N7037CCU1
Schottky jans
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1N7064CCU3
Abstract: 30CLJQ045 1N7064CCU3C MIL-PRF-19500/754
Text: INCH-POUND MIL-PRF-19500//754 13 August 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7064CCU3 and 1N7064CCU3C, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments
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MIL-PRF-19500//754
1N7064CCU3
1N7064CCU3C,
MIL-PRF-19500.
30CLJQ045
30CLJCQ045
JAN1N7064CCU3
JAN1N7064CCU3C
30CLJQ045
1N7064CCU3C
MIL-PRF-19500/754
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GL5FG43
Abstract: 40khz ultrasonic measurement CBEY
Text: . .* i DATE: PREPARED BY: !EC No. DG-9610~9 —.— DEVICES SPECIFICATION DIV. / DEVICE SPECIFICATION FOR Light emitting diode Lazp . —. .— 1. These specification sheets include the coatents under ~je :r:Yright of Sharp Corporation “Sharp’ . Please keep them with reasonable care as important information. please do not reproduce
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DG-9610
40kHz
exceeding90
GL5FG43
40khz ultrasonic measurement
CBEY
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manson
Abstract: 1N4148UE2 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 SOD-123 marking code A1 sod123 diode marking e.1
Text: INCH POUND MIL-PRF-19500/691 16 July 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N4148UE2 JAN, JANTX, AND JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE
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MIL-PRF-19500/691
1N4148UE2
MIL-PRF-19500.
OD-123)
manson
1N4148UE2
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A113
SOD-123 marking code A1
sod123 diode marking e.1
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BT 342 project
Abstract: 19500/690
Text: INCH POUND MIL-PRF-19500/690 7 November 2003 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N4148SOI NBN , JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/690
1N4148SOI
MIL-PRF-19500.
BT 342 project
19500/690
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1n6831
Abstract: 1N6826US 1N6826 MIL-PRF19500 1N6831US
Text: INCH-POUND MIL-PRF-19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments
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MIL-PRF-19500/670
1N6826,
1N6826US,
1N6831
1N6831US
MIL-PRF-19500,
1N6826US
1N6826
MIL-PRF19500
1N6831US
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1N6840
Abstract: 1N6840U3 1N6841 1N6841U3 MIL-PRF19500 smd code marking pk oh SMD diode MARKING CODE Z2 MARKING CODE LR1 DIODE
Text: INCH-POUND MIL-PRF-19500/678 1 July 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6840U3 AND 1N6841U3, JAN, JANTX, JANTXV, JANS This specification is approved for use by all Departments
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MIL-PRF-19500/678
1N6840U3
1N6841U3,
MIL-PRF-19500.
1N6840
1N6841
1N6840
1N6841
1N6841U3
MIL-PRF19500
smd code marking pk oh
SMD diode MARKING CODE Z2
MARKING CODE LR1 DIODE
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1N7069
Abstract: 35GQ100 ua 761
Text: INCH-POUND MIL-PRF-19500/761 22 JANUARY 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, TYPE 1N7069T1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/761
1N7069T1,
MIL-PRF-19500.
O-254AA)
35GQ100
JAN1N7069T1
1N7069
35GQ100
ua 761
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1N6757
Abstract: lm 4011 MIL-PRF19500 1N675
Text: INCH-POUND MIL-PRF-19500/641 1 April 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, TYPE 1N6757, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/641
1N6757,
MIL-PRF-19500.
O-257AA)
1N6757
1N6757
lm 4011
MIL-PRF19500
1N675
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led L-612
Abstract: GL6UR11T 40KHz ultrasonic cleaning
Text: – 9 6 6 0 2 4 SHARP ISSUE \ ELECTRONIC COMPONENTS GROUP REPRESENTATIV&QI SHARP CORPORATION >&# \ OPTO–ELEC D E V I C E S DI . % SPECIFICATION DEVICE SPECIFICATION FOR Light emitting diode Lamp MODEL No. GL6UR11T / \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp” .
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GL6UR11T
40kHz,
led L-612
GL6UR11T
40KHz ultrasonic cleaning
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5BWF15L00
Abstract: a1249 so2 sensor GW5BWF15L00 power electronics project list
Text: SPEC. No. ISSUE DG-087005 Jun-27-08 ELECTRONIC COMPONENTS AND DEVICES GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODULE MODEL No. GW5BWF15L00 Ｓｐｅｃｉｆｉｅｄ ｆｏｒ Reference CUSTOMERS' APPROVAL PRESENTED
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DG-087005
Jun-27-08
GW5BWF15L00
A1249
5BWF15L00
so2 sensor
GW5BWF15L00
power electronics project list
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1N7062CCT1
Abstract: 1n7062 MIL-PRF-19500 schottky rectifier MIL-STD-750 METHOD 2036 conditions E 35CGQ100 4011 equivalent kovar B 342 Dc
Text: INCH-POUND MIL-PRF-19500/762 22 JANUARY 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7062CCT1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/762
1N7062CCT1,
MIL-PRF-19500.
35CGQ100
JANS1N7062CCT1
1N7062CCT1
1n7062
MIL-PRF-19500 schottky rectifier
MIL-STD-750 METHOD 2036 conditions E
35CGQ100
4011 equivalent
kovar
B 342 Dc
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marking z2p
Abstract: 1N830A
Text: MIL-S- 19500/229 NA VY 29 June 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1NB30AM 1. SCOPE 1.1 Description. - This specification covers the detail requirem ents for a silicon diode lor UHF detector applications and is in accordance with Specification MIL-S-19500, except as otherwise specified herein.
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19500/229fNAVY)
1NB30AM
MIL-S-19500,
MIL-S-19500
MIL-9TD-750
M1L-STD-750
marking z2p
1N830A
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kc 2026
Abstract: 100 KC 1N995 1N995M mil-s-19500 color coding
Text: M IL-S-I9500/227 NAW j 16 AnrU 1062 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M 1. SCOPE 1.1 Scope. This specification covers the detail requirem ents for a germ anium switching diode and U in accordance with Specification M IL -S-19500. except as otherw ise specified herein.
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MIL-S-I9500/227
1N995M
MIL-S-19500,
1N995M
MIL-S-19500
kc 2026
100 KC
1N995
mil-s-19500 color coding
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Solder bar of Senju M705
Abstract: senju m705 solder paste spec senju m705 solder wire Senju M705 solder bar a1249 senju m705 solder paste
Text: SHARP SPEC. ISSU E ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4B W6433 0A CUSTOMERS' APPROVAL PRESENTED Date_ Date C lu r& -¿ * > 7 BZ_ Y.Inada, 1 /
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GM4BW64330A
A1249
Solder bar of Senju M705
senju m705 solder paste spec
senju m705 solder wire
Senju M705 solder bar
senju m705 solder paste
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MTD2007F
Abstract: MTD2007 1307 TRANSISTOR equivalent HSOP28 5800pF
Text: MTD2007F SPECIFICATION Absolute maximum rating Ta=25deg Symbol VCC Vpha,I0,Il Vref VCEO(SUS) VR IC IF Tstg Tj Parameter Logic supply Logic input Reference Input Voltage Diode voltage Output current Diode current Storage temperature Junction temperature Ratings
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MTD2007F
25deg)
40kohm
Vref/10
MTD2007F
HSOP28
J0036N
MTD20
MTD2007
1307 TRANSISTOR equivalent
5800pF
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GM5WA06256A
Abstract: ip22m ph9080 M7S2
Text: SH ARP COMPOUND SEMICONDUCTOR SYSTEMS DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION r DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE m o d e ln o . GM5WA06256A J Specified for CUSTOMERS' APPROVAL PRESENTED . Date Date By By Aflr ~ ßé
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GM5WA06256A
dg063016
GM5WA06256A
ip22m
ph9080
M7S2
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senju m705 solder wire
Abstract: Solder bar of Senju M705 senju M705 solder paste senju 533 solder paste spec Senju M705 solder bar GM4BW53340A PL80 senju solder bar C0806 senju m705 silver less solder wire 0.5 mm
Text: - _ _ • SPEC. No. S H A R P ISSU E May- ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4BW53340A CUSTOMERS' APPROVAL PRESENTED Date _ Date M rt, y m :_ f j ; 2&d~7
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GM4BW53340A
senju m705 solder wire
Solder bar of Senju M705
senju M705 solder paste
senju 533 solder paste spec
Senju M705 solder bar
GM4BW53340A
PL80
senju solder bar
C0806
senju m705 silver less solder wire 0.5 mm
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ic 4016
Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Text: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August
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0005S3M
MIL-S-19500/195D
1N3206
MIL-S-19500/195D,
QQ0012S
MIL-S-19500.
MIL-S-19500
1N4373
ic 4016
1N3206
DIODE PK IN 4001
MIL-STD-750 METHOD 2036
MIL-STD-750 METHOD 2036 CONDITION E
MIL-S-19491
D253S
IC 4011 details
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JANTX1N5627
Abstract: JAN1N5624 JANTX1N5624 Ta650 Functional details of ic 4066 1N5626 IN5624 DD0015 diode 1n5624 1N5625
Text: MIL SPECS IC | d 00Q1H5 00135ST 1 |~~ MIL-S-19500/432 U3AF 3 Apr_x i-/\MILITARY SPECIFICATION SEMICONDUCTOR DEVICE“, DIODE, SILICON JAN1N5624 THROUGH JAN1N5627 AND JANTX1N5624 THROUGH JANTX1N5627 1. SCOPE 1.1 Scope - This specification covers the detail requirements for
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MIL-S-19500/432
JAN1N5624
JAN1N5627
JANTX1N5624
JANTX1N5627
QPL-19500,
Q013bl3
MIL-S-1950U/432
5961-F291)
JANTX1N5627
Ta650
Functional details of ic 4066
1N5626
IN5624
DD0015
diode 1n5624
1N5625
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