smd marking DA QT
Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
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NTHD3133PF
NTDH3133PF/D
smd marking DA QT
24W16
C2608
SMD mosfet MARKING code TJ
NTHD3133PFT1G
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Untitled
Abstract: No abstract text available
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
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NTHD3133PF
NTDH3133PF/D
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LBAS516T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523 SC79 SMD plastic package. LBAS516T1G S-LBAS516T1G FEATURES • Ultra small plastic SMD package
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LBAS516T1
OD523
LBAS516T1G
S-LBAS516T1G
OD-523
AEC-Q101
LBAS516T1G
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DIODE SMD w9
Abstract: DIODE smd Wj SOt23 Zener diode smd marking z2 sot
Text: SMD Zener Diode BZX84C2V4 THRU BZX84C75 Formosa MS List List. 1 Package outline. 2
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BZX84C2V4
BZX84C75
MIL-STD-750D
METHOD-1026
JESD22-A102
1000hrs.
METHOD-1038
METHOD-1031
DIODE SMD w9
DIODE smd Wj SOt23
Zener diode smd marking z2 sot
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology,and encapsulated LBAS516T1G in the SOD523 SC79 SMD plastic package. 1 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
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LBAS516T1
LBAS516T1G
OD523
OD-523
LBAS516T3G
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Untitled
Abstract: No abstract text available
Text: SMD Zener Diode BZX84C2V4 THRU BZX84C75 Formosa MS List List. 1 Package outline. 2
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BZX84C2V4
BZX84C75
MIL-STD-750D
METHOD-1038
JESD22-A102
METHOD-1051
METHOD-1056
1000hrs.
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y6 smd zener
Abstract: DIODE SMD w9 zener SMD W9 sot 23 smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot smd diode SOT-23 marking code Y16 y2 smd zener smd zener diode code y9 zener SMD W9 diode zener smd z5 sot-23
Text: SMD Zener Diode BZX84C2V4 THRU BZX84C75 Formosa MS List List. 1 Package outline. 2
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BZX84C2V4
BZX84C75
1000hrs.
DS-221718
y6 smd zener
DIODE SMD w9
zener SMD W9 sot 23
smd diode SOT-23 marking code Y4
Zener diode smd marking z2 sot
smd diode SOT-23 marking code Y16
y2 smd zener
smd zener diode code y9
zener SMD W9
diode zener smd z5 sot-23
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JST SOT-23
Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805
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STEVAL-ISS001V1
BAS16
100PPM
JST SOT-23
smd transistor l6
smd transistor 2y
R135 VARISTOR
103 resistor pack
diode zener c55
2Y DIODE SMD
DIODE SMD J9
transistor c114
diode zener c72
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MARKING SMD x9
Abstract: DS1217
Text: Formosa MS SMD Zener Diode ZGFM103V3B-M THRU ZGFM10330B-M List List. 1 Package outline. 2
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ZGFM103V3B-M
ZGFM10330B-M
MIL-STD-750D
METHOD-1038
JESD22-A102
METHOD-1051
METHOD-1056
1000hrs.
MARKING SMD x9
DS1217
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NTHD4P02F
Abstract: NTHD4P02FT1 NTHD4P02FT1G
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •
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NTHD4P02F
NTHD4P02F/D
NTHD4P02F
NTHD4P02FT1
NTHD4P02FT1G
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP-6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
NTHD4P02F
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NTHD4P02FT1G
Abstract: marking code vishay SILICONIX SMD TSOP C3 NTHD4P02F NTHD4P02FT1
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
NTHD4P02FT1G
marking code vishay SILICONIX
SMD TSOP C3
NTHD4P02F
NTHD4P02FT1
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NTHD3101FT1G
Abstract: NTHD3101F NTHD3101FT1 TL82
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTHD3101F/D
NTHD3101FT1G
NTHD3101F
NTHD3101FT1
TL82
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P−Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •
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NTHD4P02F
NTHD4P02F/D
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NTHD4N02F
Abstract: NTHD4N02FT1 NTHD4N02FT1G ChipFET
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
NTHD4N02F
NTHD4N02FT1
NTHD4N02FT1G
ChipFET
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Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTDH3101F/D
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Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt Features • • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTDH3101F/D
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Untitled
Abstract: No abstract text available
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
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NTHD4N02F
Abstract: NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
NTHD4N02F
NTHD4N02FT1
NTHD4N02FT1G
5M MARKING CODE SCHOTTKY DIODE
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Untitled
Abstract: No abstract text available
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
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NTHD3101FT1
Abstract: NTHD3101FT1G NTHD3101F NTHD3101FT3 NTHD3101FT3G
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTDH3101F/D
NTHD3101FT1
NTHD3101FT1G
NTHD3101F
NTHD3101FT3
NTHD3101FT3G
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