Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE SMD SJ 2 Search Results

    DIODE SMD SJ 2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SMD SJ 2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CDBW130-G

    Abstract: Diode SMD SJ 15
    Text: SMD Schottky Barrier Diodes SMD Diodes Specialist CDBW120-G Thru. CDBW140-G Forward current: 1.0A Reverse voltage: 20 to 40V RoHS Device Features SOD-123 -For use in low voltage, high frequency inverters. -Free wheeling, and polarity protection applications.


    Original     		PDF CDBW120-G CDBW140-G OD-123 OD-123, MIL-STD-750, CDBW120-G: CDBW130-G: CDBW140-G: QW-BB020 CDBW130-G Diode SMD SJ 15

    6r950c6

    Abstract: IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type Surface Mount Schottky Barrier Diode KK B160M-220 SOD-323 • Features Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop


    Original     		PDF B160M-220 OD-323

    6r950c6

    Abstract: 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 726-IPB60R950C6 IPB60R950C6 6r950c6 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950

    65E6280

    Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6


    Original     		PDF IPx65R280E6 IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 65E6280 to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipw65r ipa65r

    6r600e6

    Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6


    Original     		PDF IPx60R600E6 IPD60R600E6, IPP60R600E6 IPD60R600E6 6r600e6 infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19

    6R190C6

    Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 726-IPB60R190C6 IPB60R190C6 6R190C6 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPW60R190C6 6r190c6 infineon 6R19

    Diode type SMD marking SJ

    Abstract: Diode SMD SJ Diode SMD SJ 28 Diode SMD SJ 02 Diode SMD SJ 01 DIODE marking Sl Diode SMD SJ 09 1N5819* diode 1N5817WS-1N5819WS 1N5819WS
    Text: Diodes SMD Type Schottky Barrier Diodes 1N5817WS-1N5819WS SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. +0.1 2.6-0.1


    Original     		PDF 1N5817WS-1N5819WS OD-323 1N5817WS 1N5818WS 1N5819WS Diode type SMD marking SJ Diode SMD SJ Diode SMD SJ 28 Diode SMD SJ 02 Diode SMD SJ 01 DIODE marking Sl Diode SMD SJ 09 1N5819* diode 1N5817WS-1N5819WS 1N5819WS

    Diode type SMD marking SJ 09

    Abstract: No abstract text available
    Text: Diodes SMD Type Schottky Barrier Diodes 1N5817W-1N5819W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. +0.1 3.7-0.1 0.1max


    Original     		PDF 1N5817W-1N5819W OD-123 1N5817W 1N5818W 1N5819W Diode type SMD marking SJ 09

    Diode SMD SJ

    Abstract: Diode SMD SJ 01 Diode type SMD marking SJ Diode SMD SJ 04 MMBD5817 Diode SJ smd diode 3A Diode SMD SJ 23 Diode smd 3a marking SJ
    Text: Diodes SMD Type Schottky Diodes MMBD5817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Power Dissipation: PD = 300mW 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Collector Current: IF = 1A +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1


    Original     		PDF MMBD5817 OT-23 300mW Diode SMD SJ Diode SMD SJ 01 Diode type SMD marking SJ Diode SMD SJ 04 MMBD5817 Diode SJ smd diode 3A Diode SMD SJ 23 Diode smd 3a marking SJ

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    65C7225

    Abstract: Ipp65r225
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R225C7 1Description TO-220 tab


    Original     		PDF 650VCoolMOSTMC7PowerTransistor IPP65R225C7 IPP65R225C7 O-220 65C7225 Ipp65r225

    TRANSISTOR SMD MARKING CODE loc

    Abstract: POWER AMPLIFIER GROUP DATASHET transistor datashet list Datasheet lcd 162 smd marking RAI transistor "envelope detector diode" LMC7101 temperature TRANSISTOR SMD MARKING CODE 1v smd code lmc7101 smd 8pin marking 611
    Text: LMC8101 Qualification Package World’s First 2.7V, 1MHz RR I/O Op Amp in mico SMD Package Standard Surface Mount Packages vs. micro SMD National’s LMC8101 Delivers 10mA Output Drive and Shutdown Capability • Output Drive is 3X LMC7101 or 10mA • 1µA Shutdown Current with < 10µS


    Original     		PDF LMC8101 LMC8101 LMC7101 LMC8101: OT-23 TRANSISTOR SMD MARKING CODE loc POWER AMPLIFIER GROUP DATASHET transistor datashet list Datasheet lcd 162 smd marking RAI transistor "envelope detector diode" LMC7101 temperature TRANSISTOR SMD MARKING CODE 1v smd code lmc7101 smd 8pin marking 611

    transistor 2N3906 smd 2A SOT23

    Abstract: BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF Centr00 MPSA14 MPSA64 PZTA14 PXTA14 BCV29 BCV28 PMBTA13 PMBTA14 PMBTA64 transistor 2N3906 smd 2A SOT23 BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557

    transistor 6R385P

    Abstract: 6r385 6R385P IPL60R385CP 6r385p infineon 6R38 ipl60r VDD480 transistor smd marking Ag g1 smd diode
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R385CP 150mm² 726-IPL60R385CP transistor 6R385P 6r385 6R385P IPL60R385CP 6r385p infineon 6R38 ipl60r VDD480 transistor smd marking Ag g1 smd diode

    6R199P

    Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199

    6r385P

    Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description


    Original     		PDF IPL60R385CP 150mm² 6r385P IPL60R385CP JESD22 EL series small size SMD transistor infineon msl

    Untitled

    Abstract: No abstract text available
    Text: User Guide 020 ISL8117EVAL2Z Evaluation Board User Guide Description Key Features The ISL8117EVAL2Z evaluation board shown in Figure 1 features the ISL8117. The ISL8117 is a 60V high voltage synchronous buck controller that offers external soft-start, independent enable functions and integrates UV/OV/OC/OT


    Original     		PDF ISL8117EVAL2Z ISL8117. ISL8117 200kHz UG020

    IPL65R130C7

    Abstract: 65C7130
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPL65R130C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPL65R130C7 1Description ThinPAK8x8


    Original     		PDF 650VCoolMOSTMC7PowerTransistor IPL65R130C7 IPL65R130C7 65C7130

    1N3064

    Abstract: 54LS242
    Text: M Military 54LS242 M O TO R O LA Quad Bus Transceivers With 3-State Outputs ELECTRICALLY TESTED PER: MIL-M-38510/32801 M • Hysteresis at Inputs to Improve Noise Margins • 2-Way Asynchronous Data Bus Communications • Input Clamp Diodes Limit High-Speed Termination Effects


    OCR Scan     		PDF MIL-M-38510/32801 54LS242 JM38510/32801BXA 54LS242/BXAJC 1N3064

    Untitled

    Abstract: No abstract text available
    Text: <8>MOTOROLA M ilita ry 5 4 F 0 4 H e x 1-Input In v e rte r G ate MP0 ELECTRICALLY TESTED PER: MIL-M-38510/33002 lllllll LOGIC DIAGRAM Vcc A6 Y6 A5 Y5 A4 Y4 AVAILABLE AS: 1 JAN: JM38510/33002BXA 2) SMD: N/A 3) 883: 54F04/BXAJCX X = CASE OUTLINE AS FOLLOWS:


    OCR Scan     		PDF MIL-M-38510/33002 JM38510/33002BXA 54F04/BXAJCX

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA M ilita ry 54F 3 2 Quad 2-In p u t OR G ate MPO ELECTRICALLY TESTED PER: MIL-M-38510/33501 HUM LOGIC DIAGRAM VqC A4 B4 Y4 B3 A3 Y3 AVAILABLE AS: 1 JAN: JM38510/33501BXA 2) SMD: N/A 3) 883: 54F32/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CEROIP: C


    OCR Scan     		PDF MIL-M-38510/33501 JM38510/33501BXA 54F32/BXAJC

    Diode SMD SJ 66A

    Abstract: No abstract text available
    Text: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint


    OCR Scan     		PDF 5545S Diode SMD SJ 66A

    1N3064

    Abstract: 54LS243
    Text: M Military 54LS243 M O TO R O LA Quad Bus Transceivers With 3-State Outputs mun MP0 ELECTRICALLY TESTED PER: M IL-M-38510/32802 The 54LS243 is a Quad Bus Transmitter/Receiver designed for 4-line asynchronous 2-way data communications between data buses.


    OCR Scan     		PDF MIL-M-38510/32802 54LS243 JM38510/328028XA 54LS243/BXAJC ASS45 1N3064