65E6280
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6
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IPx65R280E6
IPA65R280E6,
IPB65R280E6
IPI65R280E6,
IPP65R280E6
IPW65R280E6
65E6280
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65E6280
Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6
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Original
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IPx65R280E6
IPA65R280E6,
IPB65R280E6
IPI65R280E6,
IPP65R280E6
IPW65R280E6
65E6280
to247 pcb footprint
IPW65R280E6
Diode SMD SJ 66A
ipw65r
ipa65r
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6r600e6
Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6
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IPx60R600E6
IPD60R600E6,
IPP60R600E6
IPD60R600E6
6r600e6
infineon marking TO-252
E6 DIODE
IPD60R600E6
IPA60R600E6
diode smd E6
JESD22
infineon
Diode SMD SJ 19
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6R600E6
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6
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IPx60R600E6
IPD60R600E6,
IPP60R600E6
IPA60R600E6
6R600E6
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PDF
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6R600E6
Abstract: diode smd E6 to252 footprint wave soldering infineon marking TO-252 IPA60R600E6 IPD60R600E6 JESD22 marking code ll SMD Transistor Diode SMD SJ 19
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6
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Original
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IPx60R600E6
IPD60R600E6,
IPP60R600E6
IPD60R600E6
6R600E6
diode smd E6
to252 footprint wave soldering
infineon marking TO-252
IPA60R600E6
IPD60R600E6
JESD22
marking code ll SMD Transistor
Diode SMD SJ 19
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet 2010-04-12 Rev. 2.0, 2.1, 2013-07-31 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6
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IPx60R600E6
IPD60R600E6,
IPP60R600E6
IPA60R600E6
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PDF
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EL series SMD transistor
Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description
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IPL60R299CP
150mm²
EL series SMD transistor
6R299P
ipl60R299cp
mosfet 600v
JESD22
ipl60r
IPL60
6r299
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6R199P
Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description
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IPL60R199CP
150mm²
6R199P
mosfet 6R199
ipl60r199cp
6R199P DATA SHEET
smd transistor AR 6
JESD22
EL series small size SMD transistor
6R19
IPL60R199
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PDF
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6r385P
Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description
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IPL60R385CP
150mm²
6r385P
IPL60R385CP
JESD22
EL series small size SMD transistor
infineon msl
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1N3064
Abstract: 54LS242
Text: M Military 54LS242 M O TO R O LA Quad Bus Transceivers With 3-State Outputs ELECTRICALLY TESTED PER: MIL-M-38510/32801 M • Hysteresis at Inputs to Improve Noise Margins • 2-Way Asynchronous Data Bus Communications • Input Clamp Diodes Limit High-Speed Termination Effects
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OCR Scan
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MIL-M-38510/32801
54LS242
JM38510/32801BXA
54LS242/BXAJC
1N3064
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PDF
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Diode smd s6 85a
Abstract: No abstract text available
Text: SFH 900 SERIES SIEMENS Miniature Light Reflection Emitter/Sensor Dimensions in inches mm Plastic Flash (Between Leads) .177 (4.5) .189 (4.8)' 256 (6.5) 276 (7.0) .012(0.3) .020 (0.5) .039 (1 0 ) Max .059(1.5) _2 .071(1.8) FEATURES • • • • • •
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OCR Scan
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18-pln
fl535t
DD15bfl4
Diode smd s6 85a
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PDF
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54F378
Abstract: BXAJC JM38510 MOTOROLA
Text: g Military 54F378 M O TO R O LA Hex Parallel D Register With Enable MPO ELECTRICALLY TESTED PER: MIL-M-38510/34108 iiiliif The 54F378 is a 6-Bit register with a buffered common enable. This device is similar to the 'F174, but features the common Enable rather
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OCR Scan
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MIL-M-38510/34108
54F378
BXAJC
JM38510 MOTOROLA
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gs 1117 ax
Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions
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OCR Scan
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IXFH/IXFM21
IXFH26N50
21N50
24N50
26N50
gs 1117 ax
1XFH
Diode SMD SJ 97
Diode SMD SJ 24
Diode SMD SJ 0B
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PDF
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transistor 2N3906 smd 2A SOT23
Abstract: BC640 PHILIPS SEMICONDUCTOR smd bc547 smd transistor NPN transistor BC547 temperature sensor bc557 SMD philips datasheet 2N4401 NPN Switching Transistor bc850c smd transistor smd 2N4403 BC547C SOT23 SMD BC557
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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Centr00
MPSA14
MPSA64
PZTA14
PXTA14
BCV29
BCV28
PMBTA13
PMBTA14
PMBTA64
transistor 2N3906 smd 2A SOT23
BC640 PHILIPS SEMICONDUCTOR smd
bc547 smd transistor
NPN transistor BC547 temperature sensor
bc557 SMD philips datasheet
2N4401 NPN Switching Transistor
bc850c smd
transistor smd 2N4403
BC547C SOT23
SMD BC557
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B3A smd
Abstract: siemens relays
Text: SIEMENS HITFET B T S 1 34 D Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 42 V • Input Protection ESD On-state resistance f î DS(on) 50 m il • Thermal shutdown with Nominal load current fo(ISO) 3.3
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OCR Scan
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Sep-11-1998
B3A smd
siemens relays
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Untitled
Abstract: No abstract text available
Text: 3A, 3.3V Fixed Linear Regulator Description The CS-5203-3 linear regulator provides a 3.3V reference at 3A with an output voltage accuracy of ±1.5%. This regulator is intended for use as a post regulator and microprocessor supply. The fast loop response and low dropout
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OCR Scan
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CS-5203-3
LT1085
CS-5203-3
CS-5203-3DP3
CS-5203-3DPR3
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS HITFET B T S 118D Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 42 V • Input Protection ESD On-state resistance f î DS(on) 100 m il • Thermal shutdown with Nominal load current fo(ISO) 2.4
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OCR Scan
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ep-11-1998
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PDF
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Diode SMD SJ 2B
Abstract: Diode SMD SJ 3B Diode SMD SJ 0A
Text: <8>MOTOROLA M ilita ry 54L S 1 5 3 Dual 4-ln p u t D ata S e le c to r/M u ltip le x e r w ith Enable MPO mini ELECTRICALLY TESTED PER: MIL-M-38510/30902 The 54LS153 is a very high-speed Dual 4-input Multiplexer with common select inputs and individual enable inputs for each section. It
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OCR Scan
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MIL-M-38510/30902
54LS153
LS153
Diode SMD SJ 2B
Diode SMD SJ 3B
Diode SMD SJ 0A
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PDF
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Diode SMD SJ 66A
Abstract: No abstract text available
Text: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint
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OCR Scan
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5545S
Diode SMD SJ 66A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an
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OCR Scan
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IRF7523D1
Rf7523d1
0D2B023
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PDF
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ic 5304 smd 8 pin
Abstract: Diode SMD SJ 36
Text: M MOTOROLA M ilitary 54LS242 Quad Bus TVansceivers With 3-State Outputs MPO ELECTRICALLY TESTED PER: MIL-M-38510/32801 /////// The 54LS242 is a Quad Bus Transmitter/Receiver designed for 4-line asynchronous 2-way data communications between data buses. • Hysteresis at Inputs to Improve Noise Margins
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OCR Scan
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MIL-M-38510/32801
54LS242
54LS242
JM38510/32801BXA
54LS242/BXAJC
ic 5304 smd 8 pin
Diode SMD SJ 36
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PDF
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Untitled
Abstract: No abstract text available
Text: M MOTOROLA M ilita ry 5 4 F 3 7 8 H e x P arallel D R eg ister W ith Enable MPO ELECTRICALLY TESTED PER: MIL-M-38510/34108 Ulfllt The 54F378 is a 6-Bit register with a buffered common enable. This device is similar to the 'F174, but features the common Enable rather
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OCR Scan
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MIL-M-38510/34108
54F378
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PDF
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Untitled
Abstract: No abstract text available
Text: M M M ilita ry 54L S 377 O T O R O L A D-Type Flip-Flop W ith Enable ELECTRICALLY TESTED PER: MIL-M-38510/32504 MPO IHflll The 54LS377 is an 8-bit register built using advanced Low Power Schottky technology. This register consists of eight D-type flip-flops with a
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OCR Scan
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MIL-M-38510/32504
54LS377
JM38510/32504BXA
S4LS377/BXAJC
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PDF
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Untitled
Abstract: No abstract text available
Text: g Military 54LS173 MOTOROLA 4-Bit D-Type Register With 3-State Outputs ELECTRICALLY TESTED PER: MPG54LS173 M PO The 54LS173 is a high-speed 4-bit Register featuring 3-state outputs for use in bus-organized systems. The clock is fully edge-triggered allowing
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OCR Scan
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54LS173
MPG54LS173
54LS173
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PDF
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