ts 4141
Abstract: BAS521
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH VOLTAGE SWITCHING DIODE BAS521 SOD- 523 Formed SMD Package Marking:- with cathode band BAS521 – L4 High Speed and High Voltage Switching Diode ABSOLUTE MAXIMUM RATINGS
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BAS521
C-120
BAS521
170210E
ts 4141
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ts 4141
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH VOLTAGE SWITCHING DIODE BAS521 SOD- 523 Formed SMD Package Marking:- with cathode band BAS521 – L4 High Speed and High Voltage Switching Diode ABSOLUTE MAXIMUM RATINGS
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BAS521
C-120
BAS521
170210E
ts 4141
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8M SMD
Abstract: BAS116
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS
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BAS116
OT-23
C-120
BAS116
Rev140505E
8M SMD
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BAS116
Abstract: MARKING JS sot-23 smd marking NC package sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS
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BAS116
OT-23
C-120
BAS116
Rev140505E
MARKING JS sot-23
smd marking NC package sot23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS
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BAS116
OT-23
C-120
BAS116
Rev140505E
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smd diode a7
Abstract: smd jsp SMD a7 S BAV99 SOT 23 smd diode marking A7 SOT-23 JSP SMD JSp SOT23 bav99 sot-23 smd transistor A7 Diode BAV99 SOT23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking BAV99 = A7 High-Speed Switching Series Diode Pair
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BAV99
OT-23
C-120
200310E
smd diode a7
smd jsp
SMD a7 S
BAV99 SOT 23
smd diode marking A7 SOT-23
JSP SMD
JSp SOT23
bav99 sot-23
smd transistor A7
Diode BAV99 SOT23
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smd diode a7
Abstract: jsp sot-23 marking
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 2 1 Marking BAV99 = A7 High-Speed Switching Series Diode Pair
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BAV99
OT-23
C-120
200310E
smd diode a7
jsp sot-23 marking
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Untitled
Abstract: No abstract text available
Text: SMD Zener Diode CZRH584C2V4-G Thru CZRH584C51-G Voltage: 2.4 to 51 Volts Power: 200 mWatts RoHS Device Features -For surface mounted applications. SOD-523 -Power Dissipation PD: 200mW . -Ideally suited for automated assembly processes. 0.051 1.30 0.043(1.10)
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CZRH584C2V4-G
CZRH584C51-G
OD-523
200mW
OD-523,
MIL-STD-750
QW-BZ025
CZRH584C51-G
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smd diode K2
Abstract: smd diode 1301 DIODE smd marking k2 transistor smd K2 smd diode JS k2 smd transistor smd transistor k2 SOT-363 marking 05 BAW101S smd JS 3
Text: Diodes SMD Type High Voltage Double Diode BAW101S SOT-363 Unit: mm +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 Small plastic SMD package 0.36 High switching speed: max. 50 ns +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 High continuous reverse voltage: 300 V
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BAW101S
OT-363
smd diode K2
smd diode 1301
DIODE smd marking k2
transistor smd K2
smd diode JS
k2 smd transistor
smd transistor k2
SOT-363 marking 05
BAW101S
smd JS 3
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Switching Diode BAV19WS THRU BAV21WS List List. 1 Package outline. 2
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BAV19WS
BAV21WS
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Switching Diode BAV19WS THRU BAV21WS List List. 1 Package outline. 2
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BAV19WS
BAV21WS
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
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SOD-323F
Abstract: No abstract text available
Text: Formosa MS SMD Switching Diode BAV19WS THRU BAV21WS List List. 1 Package outline. 2
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BAV19WS
BAV21WS
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
1000hrs.
METHOD-4066-2
SOD-323F
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smd diode code a8
Abstract: smd diode A8
Text: Formosa MS SMD Switching Diode BAV19WS THRU BAV21WS List List. 1 Package outline. 2
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BAV19WS
BAV21WS
1000hrs.
DS-221917
smd diode code a8
smd diode A8
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type General Purpose PIN Diode BAP63-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High speed switching for RF signals +0.1 1.3-0.1 ● Low diode capacitance ● Low diode forward resistance +0.1 2.6-0.1 1.0max
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BAP63-03
OD-323
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smd diode JS
Abstract: BA277 diode smd diode marking 85 smd marking 35 smd marking rd smd marking js KA277
Text: Diodes SMD Type Band-Switching Diode KA277 BA277 SOD-523 +0.05 0.3-0.05 Features Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Small plastic SMD package Continuous reverse voltage: max. 35 V + +0.1 0.6-0.1 - Continuous forward current: max. 100 mA +0.1 1.6-0.1 Low diode capacitance: max. 1.2 pF
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KA277
BA277)
OD-523
07max
77max
smd diode JS
BA277
diode
smd diode marking 85
smd marking 35
smd marking rd
smd marking js
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smd diode a5
Abstract: DIODE a5 marking a5 diode A5 DIODE SMD DIODE MARKING 14 diode marking 14 smd diode 1301 smd diode marking a5 smd marking S21 s21 diode
Text: Diodes SMD Type General Purpose PIN Diode KAP50-03 BAP50-03 SOD-323 Unit: mm +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Low diode capacitance. Low diode forward resistance. +0.1 2.6-0.1 0.375 +0.05 0.1-0.02 0.475 1.0max Absolute Maximum Ratings Ta = 25
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KAP50-03
BAP50-03)
OD-323
smd diode a5
DIODE a5
marking a5 diode
A5 DIODE
SMD DIODE MARKING 14
diode marking 14
smd diode 1301
smd diode marking a5
smd marking S21
s21 diode
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Switching Diode BAS21_A_C_S List List. 1 Package outline. 2 Features. 2
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Ma22-A102
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
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smd diode a7
Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Text: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output
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DF30PC3M
STO-220
smd diode a7
schottky diode marking A7
diode marking H2
5011s
smd marking 5G
smd marking a7
DF30PC3M
marking A7 diode
SHINDENGEN DIODE
A7 diode smd
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smd diode marking U1
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use
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DE10PC3
--25C
smd diode marking U1
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smd diode marking sm 34
Abstract: No abstract text available
Text: Schottky Barrier Diode mtmm Single Diode o u t l in e M2FH3 30V 6A Feature 1Small SMD ' Super-Low V f = 0 .3 6 V • /JvS Ü S M D • tliafîV F = 0.36V Main Use • i K y z r U —jS JS K it • DC/DC n y j { - 5 > • Reverse connect protection for DC power source
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IR LFN
Abstract: D1FK70 smd diode ss 501 SMD MARKING LFN ir smd m7 diode super fast diode smd marking "OA" smd diode 1f diode smd marking VD
Text: Super Fast Recovery Diode Single Diode m tm m D1FK70 o u tlin e 700V 0.8A Feature • • • • • /JvS JS M D • S iS Œ • Vrm =700V Small SMD High Voltage Low Noise Vrm=700V Main Use • DC/D C o y it—9 • iS Iâ .F A lÆ f ê S • • • •
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D1FK70
J532-1)
IR LFN
D1FK70
smd diode ss
501 SMD MARKING
LFN ir
smd m7
diode super fast
diode smd marking "OA"
smd diode 1f
diode smd marking VD
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Diode marking 27C
Abstract: Ss 24 DIODE SMD SMD Marking jx diode smd marking jx MARKING CL4 smd marking YF smd diode 27c diode smd marking VD mark g1f
Text: Schottky Barrier Diode Single Diode m tm m DG1S4 o u tlin e Package :G 1 F Unu:mm Weight O.Ollii Typ 4 0 V 1A 35 <2) Feature •Î8/J\5!JSMD • • Ultra-small SMD • Ultra-thin PKG=0.8mm • Low VF-0.55V 0.8mm • ô V f =0.55V i |L71 C a th o d e m a rk
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160mm1)
cj532-d
Diode marking 27C
Ss 24 DIODE SMD
SMD Marking jx
diode smd marking jx
MARKING CL4
smd marking YF
smd diode 27c
diode smd marking VD
mark g1f
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smd diode SM 97
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30PC3M PyhfLig- ffl U nit-m m W eight 1.5g(Typ) 10.2 30V 30A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M
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STO-220
DF30PC3M
smd diode SM 97
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D 92 M - 02 DIODE
Abstract: JS marking diode c 92 M - 02 DIODE
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7
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STO-220
DF20PC3M
D 92 M - 02 DIODE
JS marking diode
c 92 M - 02 DIODE
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