Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics
|
Original
|
NTHD3101F
Dra17.
|
PDF
|
smd marking DA QT
Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
|
Original
|
NTHD3133PF
NTDH3133PF/D
smd marking DA QT
24W16
C2608
SMD mosfet MARKING code TJ
NTHD3133PFT1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
|
Original
|
NTHD3133PF
NTDH3133PF/D
|
PDF
|
LBAS516T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523 SC79 SMD plastic package. LBAS516T1G S-LBAS516T1G FEATURES • Ultra small plastic SMD package
|
Original
|
LBAS516T1
OD523
LBAS516T1G
S-LBAS516T1G
OD-523
AEC-Q101
LBAS516T1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology,and encapsulated LBAS516T1G in the SOD523 SC79 SMD plastic package. 1 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
|
Original
|
LBAS516T1
LBAS516T1G
OD523
OD-523
LBAS516T3G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Zener Diode MMSZ5221B THRU MMSZ5267B List List. 1 Package outline. 2
|
Original
|
MMSZ5221B
MMSZ5267B
MIL-STD-202F
METHOD-208
MIL-STD-750D
METHOD-1038
JESD22-A102
METHOD-1051
1000hrs.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
|
Original
|
LBAS516T1G
LBAS516T1
OD523
OD-523
LBAS516T3G
|
PDF
|
BAS116H
Abstract: No abstract text available
Text: BAS116H 75 V, low leakage diode in small SOD123F package Rev. 01 — 11 April 2005 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features • Small and flat lead SMD plastic package
|
Original
|
BAS116H
OD123F
BAS116H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
|
Original
|
LBAS516T1G
LBAS516T1
OD523
OD523
SC-79
LBAS516T
|
PDF
|
BAS116H
Abstract: No abstract text available
Text: BAS116H 75 V, low leakage diode in small SOD123F package Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features Small and flat lead SMD plastic package
|
Original
|
BAS116H
OD123F
BAS116H
|
PDF
|
NTHD4P02F
Abstract: NTHD4P02FT1 NTHD4P02FT1G
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •
|
Original
|
NTHD4P02F
NTHD4P02F/D
NTHD4P02F
NTHD4P02FT1
NTHD4P02FT1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
|
Original
|
NTHD4P02F
NTHD4P02F/D
|
PDF
|
NTHD4P02FT1G
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
|
Original
|
NTHD4P02F
otherwi18.
NTHD4P02FT1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
|
Original
|
NTHD4P02F
NTHD4P02F/D
NTHD4P02F
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
|
Original
|
NTHD4P02F
NTHD4P02F/D
|
PDF
|
NTHD3101FT1G
Abstract: NTHD3101F NTHD3101FT1 TL82
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
|
Original
|
NTHD3101F
NTHD3101F/D
NTHD3101FT1G
NTHD3101F
NTHD3101FT1
TL82
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •
|
Original
|
NTHD4P02F
NTHD4P02F/D
|
PDF
|
NTHD4N02F
Abstract: NTHD4N02FT1 NTHD4N02FT1G ChipFET
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
|
Original
|
NTHD4N02F
NTHD4N02F/D
NTHD4N02F
NTHD4N02FT1
NTHD4N02FT1G
ChipFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
|
Original
|
NTHD3101F
NTDH3101F/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt Features • • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
|
Original
|
NTHD3101F
NTDH3101F/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
|
Original
|
NTHD4N02F
NTHD4N02F/D
|
PDF
|
NTHD4N02F
Abstract: NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
|
Original
|
NTHD4N02F
NTHD4N02F/D
NTHD4N02F
NTHD4N02FT1
NTHD4N02FT1G
5M MARKING CODE SCHOTTKY DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
|
Original
|
NTHD4N02F
NTHD4N02F/D
|
PDF
|
NTHD3101FT1
Abstract: NTHD3101FT1G NTHD3101F NTHD3101FT3 NTHD3101FT3G
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
|
Original
|
NTHD3101F
NTDH3101F/D
NTHD3101FT1
NTHD3101FT1G
NTHD3101F
NTHD3101FT3
NTHD3101FT3G
|
PDF
|
