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    DIODE SMD 5T Search Results

    DIODE SMD 5T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SMD 5T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD diode color code

    Abstract: SLSNNBS102TS Samsung Electro-Mechanics smd diode j smd transistor 501 MAX260 DIODE SMD 33 Samsung Electro-Mechanics led 25cycles COLOR CODE ON SMD DIODE
    Text: Light Emitting Diode - SMD LED - Light Emitting Diode - SMD LED • INTRODUCTION A light-emitting diode LED is a semiconductor device that emits visible light when an electric current passes through it. Samsung is manufacturing several kinds of LEDs, specially focusing on


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    PDF 630nm 700nm) 400nm) 830nm MAX260 120max 120sec 30sec MAX300, SMD diode color code SLSNNBS102TS Samsung Electro-Mechanics smd diode j smd transistor 501 DIODE SMD 33 Samsung Electro-Mechanics led 25cycles COLOR CODE ON SMD DIODE

    BA792

    Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:


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    PDF BA792 MAM139 OD110) OD110 SCDS47 117021/1100/01/pp8 BA792 top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark

    SMD MARKING 541 DIODE

    Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
    Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF


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    PDF M3D178 BA792 MAM139 OD110) OD110 SCDS47 113061/1100/01/pp8 SMD MARKING 541 DIODE smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777

    Zener diode smd marking 5j

    Abstract: MM5Z3V9 smd zener diode code 5F
    Text: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List. 1 Package outline. 2 Features. 2


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    PDF MM5Z75V MIL-STD-750D METHOD-1026 JESD22-A102 METHOD-1051 METHOD-1056 1000hrs. Zener diode smd marking 5j MM5Z3V9 smd zener diode code 5F

    smd Marking OU

    Abstract: B05S-G B05S smd marking NE B10S B10SG
    Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)


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    PDF B05S-G B10S-G O269AA 125grams. QW-BBR01 smd Marking OU B05S smd marking NE B10S B10SG

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    Abstract: No abstract text available
    Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. -Ideal for printed circuit board. 0.031 0.80 0.019 (0.50)


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    PDF B05S-G B10S-G 125grams. QW-BBR01 82MIN 032MIN 55REF 100REF 92MIN 036MIN

    general purpose bridge rectifier

    Abstract: comchip rectifier bridge low smd diode bridge
    Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-HF Thru B10S-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Halogen Free MBS Features -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board.


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    PDF B05S-HF B10S-HF 125grams. QW-JBR03 82MIN 55REF 92MIN 00MAX 032MIN 100REF general purpose bridge rectifier comchip rectifier bridge low smd diode bridge

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    Abstract: No abstract text available
    Text: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)


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    PDF B01S-G B05S-G B10S-G O269AA 125grams. QW-BBR01

    Untitled

    Abstract: No abstract text available
    Text: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE VERSION MAKER Prepared SMD LED, RGB AOT-1206-3D-RGB03-Z General Customer 2005/June 1 CUSTOMER Checked Approved AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang,


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    PDF AOT-1206-3D-RGB03-Z 2005/June

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK10G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK10G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


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    PDF IDK10G65C5

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK06G65C5 Final Data Sheet Rev. 2.0, 2012-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK06G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


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    PDF IDK06G65C5

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK09G65C5 Final Datasheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK09G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


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    PDF IDK09G65C5

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


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    PDF IDK08G65C5

    D0465C5

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK04G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


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    PDF IDK04G65C5 D0465C5

    Untitled

    Abstract: No abstract text available
    Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK03G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK03G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC


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    PDF IDK03G65C5

    MR1020

    Abstract: I2C00 marking JB SCHOTTKY BARRIER DIODE MARKING FY DF25SC6M marking JB diode SHINDENGEN DIODE
    Text: Schottky Barrier Diode Twin Diode mnm DF25SC6M o u tlin e 60V 25A Feature • SMD • SMD • PRRSM • P rrsm Rating • /jv s fc fc œ s s » • High lo Rating-Small-RKG Main Use • • • • Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation


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    PDF DF25SC6M STO-220 I-111, J532-1) MR1020 I2C00 marking JB SCHOTTKY BARRIER DIODE MARKING FY DF25SC6M marking JB diode SHINDENGEN DIODE

    20sc9m

    Abstract: marking JB diode DF20S marking JB SCHOTTKY BARRIER DIODE smd marking 5G DF20SC9M jb smd smd diode marking wr 05 TCI diode SHINDENGEN DIODE
    Text: Schottky Barrier Diode Twin Diode mnm DF20SC9M o u tlin e 90V 20A Feature • SMD • SMD • PRRSM • P rrsm Rating • / jv s f c f c œ s s » • High lo Rating-Small-RKG • D C /D C • Switching Regulator • DC/DC Converter Main Use • m m . y - h . O A m ss


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    PDF DF20SC9M STO-220 I-111, J532-1) 20sc9m marking JB diode DF20S marking JB SCHOTTKY BARRIER DIODE smd marking 5G DF20SC9M jb smd smd diode marking wr 05 TCI diode SHINDENGEN DIODE

    smd diode marking JC

    Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
    Text: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g


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    PDF DF30SC3ML STO-220 smd diode marking JC DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220

    diode 429 IK

    Abstract: No abstract text available
    Text: □ - □ 3 . V 'C X - Y Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DF20LC20U Unit • mm Package I STO-220 10 9 ± -9- 200V 20A >SMD m s 'i'x > trr35n s >SRSÜ > D C /D C ® > 7 5 ^ * -f-J b 2 @ (D >^BsOAw0,^ K H s . FA


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    PDF DF20LC20U STO-220 trr35n DF20LC20U 50HziE5K J515-5 diode 429 IK

    1PS181

    Abstract: smd diode code 1_b marking code diode Eb SMD SC59
    Text: Philips Semiconductors Product specification High-speed double diode 1PS181 FEATURES DESCRIPTION • Small plastic SMD package The 1PS181 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the


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    PDF 1PS181 1PS181 7110fl2L. smd diode code 1_b marking code diode Eb SMD SC59

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Single Diode D1FS4 Weight 0.0f>8tf Typ 40V 1.1A 'Cathode mark Feature • /JvguSMD • P rrsm 7V C 5 i fitBE 1 I • Small SMD • P r r s m Rating Main Use • • • • • D C /D C n y /i—? • * « . y - A . OAfiSSI U nit: mm


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    PDF J532-1)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Single Diode OUTLINE Package : 1F D1FS6 Unit ‘mm Weight U.0f>8u Typ a v-K -y-» 60V 1.1A ' Cathode mark 1I r l cos I GO cn Feature • 'J S M D • Small SMD • P r r s m 7 ' K 5 > î/ x ( S S E • P rrsm Rating Type Na ir: CM


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    PDF 501lz J532-1)

    50N60

    Abstract: 50N6
    Text: IGBT with Diode vCES IXSX50N60AU1 IXSX50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2


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    PDF 247TM IXSX50N60AU1 IXSX50N60AU1S 50N60AU1S) O-247 247TM 50N60AU1) 50N60 50N6

    1PS226

    Abstract: PS226 SC59 SMD MARKING CODE M 4 Diode MARKING CODE c3t high speed double diode
    Text: W AMER PHILIPS/DISCRETE bTE D m bbSBTBl 00E71D? 5TÔ B 1 A P X P relim in ary sp e c ific atio n P hilips S e m ic o n d u c to rs H igh sp eed d o u b le d io d e FEATURES 1P S 226 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode


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    PDF 00E71G? 1PS226 1PS226 PS226 SC59 SMD MARKING CODE M 4 Diode MARKING CODE c3t high speed double diode