Untitled
Abstract: No abstract text available
Text: Transistors IC MOSFET SMD Type Product specification 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127
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2SK3716
O-252
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Untitled
Abstract: No abstract text available
Text: IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling
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IDB30E120
P-TO220-3
IDB30E120
D30E120
Q67040-S4383
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2SK3716
Abstract: smd diode Mu
Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max
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2SK3716
O-252
2SK3716
smd diode Mu
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D15E60
Abstract: IDP15E60 IDB15E60 Q67040-S4484 Q67040-S4485
Text: IDP15E60 IDB15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
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IDP15E60
IDB15E60
P-TO220-3
P-TO220-2-2.
Q67040-S4485
D15E60
D15E60
IDP15E60
IDB15E60
Q67040-S4484
Q67040-S4485
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D30E60
Abstract: IDP30E60 IDB30E60 diode 30a 400v
Text: IDP30E60 IDB30E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
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IDP30E60
IDB30E60
P-TO220-3
P-TO220-2-2.
Q67040-S4488
D30E60
D30E60
IDP30E60
IDB30E60
diode 30a 400v
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Untitled
Abstract: No abstract text available
Text: IC Transistors MOSFET SMD Type Product specification 2SK3365 TO-252 MAX. VGS = 4 V, ID = 15A Low Ciss: Ciss = 1300 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 RDS(on)3 = 29m Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15
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2SK3365
O-252
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Untitled
Abstract: No abstract text available
Text: IDB15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature
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PDF
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IDB15E60
P-TO220-3
IDB15E60
D15E60
Q67040-S4484
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D30E120
Abstract: IDP30E120 IDB30E120
Text: IDP30E120 IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
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IDP30E120
IDB30E120
P-TO220-3
P-TO220-2-2.
Q67040-S4390
D30E120
D30E120
IDP30E120
IDB30E120
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5n fast recovery diodes
Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Text: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.
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SC802-04
TS902C2
TS902C3
TS912S6
TS906C2
5n fast recovery diodes
30A 45V SCHOTTKY BARRIER RECTIFIER
GENERAL SEMICONDUCTOR SMD DIODES
smd diode 0.5A fast 600v
LOW LOSS FAST RECOVERY DUAL DIODES
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smd diode a7
Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Text: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output
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OCR Scan
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DF30PC3M
STO-220
smd diode a7
schottky diode marking A7
diode marking H2
5011s
smd marking 5G
smd marking a7
DF30PC3M
marking A7 diode
SHINDENGEN DIODE
A7 diode smd
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STO-220
Abstract: DF30JC4 SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm DF30JC4 o u t lin e 40V 30A Feature • • • • • SMD • filR = 0 .7 m A • jw is æ ç ë c u ic < L ' SMD Low lR=0.7mA Resistance for thermal run-away High lo Rating -Small-PKG Main Use • Secondary rectification for Adapter of
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PDF
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DF30JC4
STO-220
J532-1)
STO-220
DF30JC4
SHINDENGEN DIODE
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GC smd diode
Abstract: IOA10 smd marking gc diode
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30JC4 Unit-m m W e ig h t 1.5g Typ 10.2 40V 30A Feature • SMD • SMD • <SlR=0.7mA • Low lR=0.7mA • S iy R T È ÎE iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG
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OCR Scan
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PDF
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STO-220
DF30JC4
tec40
GC smd diode
IOA10
smd marking gc diode
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smd diode marking JC
Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Text: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g
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DF30SC3ML
STO-220
smd diode marking JC
DIODE BJE
DIODE BJE smd
marking JC diode
df30sc3
smd marking 5G
DF30SC3ML
hm marking smd DIODE
SHINDENGEN DIODE
sto220
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m w m OUTLINE DF30SC4M 40V 30A Feature • SMD • SMD • P rrsm7 K 5 V v i S ’ Œ • P rrsm Rating • High lo Rating'Small-PKG Main Use • DC/DC n y jt — p • m m .r-k .o A m s s • is m .tf- fz r ju m g • •
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DF30SC4M
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smd diode SM 97
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30PC3M PyhfLig- ffl U nit-m m W eight 1.5g(Typ) 10.2 30V 30A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M
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PDF
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STO-220
DF30PC3M
smd diode SM 97
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smd ic marking SH
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode M fm DF30JC10 O UTLINE Unit-mm Weight 1.5g Typ Package : STO-220 PyhfLig-(ffl) 10.2 100V 30A Feature • SM D • SMD • • (glR=1.0mA • Low Ir =1 .0mA • S iy R T È ÎE iË c I l_y (<_ <L Ui • Resistance for thermal run-away
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DF30JC10
STO-220
smd ic marking SH
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smd regulator marking
Abstract: DF30NC15 MARKING FY smd diode marking BM smd marking fy SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm DF30NC15 o u t lin e 150V 30A Fea tu re • SM D • SMD • Low lR=0.5mA • f ilR = 0 . 5 m A • Resistance for thermal run-away M ain U s e • Switching Regulator • DC/DC Converter • D C /D C n y K - 9 • OA
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DF30NC15
STO-220
J532-1)
I-111,
smd regulator marking
DF30NC15
MARKING FY
smd diode marking BM
smd marking fy
SHINDENGEN DIODE
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STO-220 Shindengen
Abstract: DF30JC6 SHINDENGEN DIODE diode smd 5t
Text: Schottky Barrier Diode Twin Diode mnm DF30JC6 o u t lin e 60V 30A Feature • SM D • SMD • filR = 0 .7 m A • Low lR=0.7mA • Resistance for thermal run-away • jw is æ ç ë c u ic < L ' • High lo Rating -Small-PKG Main Use • snata 2%ffi8æ • Secondary rectification for Adapter of
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PDF
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DF30JC6
STO-220
Tc-10
STO-220 Shindengen
DF30JC6
SHINDENGEN DIODE
diode smd 5t
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DF30JC10
Abstract: J1 smd marking SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode m n m DF30JC10 o u t lin e 100V 30A Feature • SMD • filR=1.0mA • Low Ir= 1 .0m A • jw is æ ç ë c u ic < L ' • Resistance for thermal run-away • SM D • High lo Rating -Sm all-PK G Main Use • y - h 'P C . L C D t - S 'H
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PDF
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DF30JC10
STO-220
DF30JC10
J1 smd marking
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: C30T04QH C30T04QH-11A 30a / 40v SCHOTTKY BARRIER DIODE FEATURES o | SQUARE-PAK | TO-263AB SMD Packaged in 24mm Tape and Reel : C30T04QH o T abless T0-220 : C30T04QH-11A ODual Diodes •Cathode Common OLow Forward Voltage Drop O High Surge Capability O T j = 150°C operation
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C30T04QH
C30T04QH-11A
O-263AB
T0-220
bbisi23
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sm smd diode marking
Abstract: D1FH3
Text: Single Diode D1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 3A Feature Small SMD Super-Low V f=0.36V • H Î M V f=0.36V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K u / x U — ïÉ fë B S ih
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Untitled
Abstract: No abstract text available
Text: mnnr/ux mw Power zener Diode Power Surface Mount Device Single Zener Diode • ftIBIH OUTLINE ST70-27F 27V 7000W ■ ■ î5 î* 3 È Feature ■ 5W Class ■ SMD Package ■ Available for automotive use £ v ' T ffi&EPttfilSr r w s s r ¿5 v For details of outline dimensions, refer to our web site or the
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ST70-27F
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a17 smd diode
Abstract: marking smd NU JT MARKING smd marking MY SM3 DIODE
Text: Schottky Barrier Diode Single Diode m tm m o u tlin e Package :G1F DG1M3A Unu:mm W eight O .O llii Typ in 30V 1.5A Feature • g /J 'fflS M D • Ultra-small SMD • |g n i^ = 0 .8 m m • Ultla-thin PKG=0.8mm • < 5V f = 0 .4 6 V • Low V f-0 .46V • 1KIr = 0.05mA
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tVU-71-Â
J53Z-1)
a17 smd diode
marking smd NU
JT MARKING
smd marking MY
SM3 DIODE
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smd marking KM
Abstract: JH MARKING CODE SCHOTTKY DIODE
Text: Schottky Barrier Diode Single Diode DG1M3A Unit-mm Weight 0.011 g Typ Package : G1F 30V 1.5A Feature • i s i l s y = 0 .8 m m Ultra-small SMD Ultla-thin PKG=0.8mm •< S V f= 0 .4 6 V Low Vf=0.46V • 1 5 I r = 0 .0 5 m A Low lR =0.05m A • If s m = 3 0 A
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160mm'
160mnf)
50IIz
smd marking KM
JH MARKING CODE SCHOTTKY DIODE
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