melf diode D-5D
Abstract: 1N6638 1N6638U 1N6640 1N6640U 1N6642
Text: 1N6638/ U/ US 1N6640/ US 1N6642/ U/ US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. B SJ SX SV SIGNAL OR COMPUTER DIODE 1N6638, 1N6640, 1N6642 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Manufacture & screen to TX/TXV/JANS per MIL-PRF-19500/578,609 using Sensitron
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1N6638/
1N6640/
1N6642/
1N6638,
1N6640,
1N6642
MIL-PRF-19500/578
7700-409X
DO-35
1N6638
melf diode D-5D
1N6638U
1N6640
1N6640U
1N6642
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1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4475
1N4465
1N4469
1N4474
1N4464 Zener diode
zener diode 1N4464
1N4478
1N4477
1N4471
1N4479
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d 5072 transistor
Abstract: d 5072 1N6171AUS
Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6138A/US
1N6173A/US
1N6138A/US
1N6139A/US
1N6140A/US
1N6141A/US
1N6142A/US
1N6143A/US
1N6144A/US
1N6145A/US
d 5072 transistor
d 5072
1N6171AUS
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C 5074 transistor
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6102A/US
1N6137A/US
1N6102A/US
1N6103A/US
1N6104A/US
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
C 5074 transistor
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1N4465
Abstract: 1N4475 1N4474 1N4464 1N4464US 1N4494 1N4494US SN63 zener diode 1N4464 1N4477
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev A SJ/ SX /SV SS Zener 1.5W DIODE • • • • • • Ultra-low reverse leakage current Zener voltage available from 9.1V to 160V Sharp Zener knee Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4464/US
1N4465/US
1N4466/US
1N4467/US
1N4468/US
1N4469/US
1N4465
1N4475
1N4474
1N4494
1N4494US
SN63
zener diode 1N4464
1N4477
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diode 1N3595us-1
Abstract: 1N3595US 1N3595US-1 1N3595 D-5D 1N3595 1N3595-1
Text: 1N3595-1 1N3595US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. - SJ SX SV SWITCHING DIODE 1N3595-1, 1N3595US-1 • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D
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1N3595-1
1N3595US-1
1N3595-1,
DO-35
1N3595,
diode 1N3595us-1
1N3595US
1N3595US-1
1N3595 D-5D
1N3595
1N3595-1
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Untitled
Abstract: No abstract text available
Text: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W
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1N6108A
1N6136A
MIL-PRF-19500/516
1N6108A/US
1N6109A/UStasheet
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1N3595-1US
Abstract: JANTXV 1N3595 equivalent 1n3595-1 1N 457 equivalent 1N3595US JANTX 1N3595 jantx1n3595-1 1N3595-1 JANTX JANS1N3595US melf diode D-5D
Text: 1N3595-1, 1N3595US-1 Standard VF CONTROLLED DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Vf Controlled Diodes Qualified per MIL-PRF-19500/241
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1N3595-1,
1N3595US-1
MIL-PRF-19500/241
MIL-PRF-19500/241
MIL-PRF19500/241
1N3595-1US
JANTXV 1N3595 equivalent
1n3595-1
1N 457 equivalent
1N3595US
JANTX 1N3595
jantx1n3595-1
1N3595-1 JANTX
JANS1N3595US
melf diode D-5D
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3595
Abstract: 1N3595-1 SV359
Text: 1N3595-1, 1N3595US-1 Standard VF CONTROLLED DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. A.1 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* VF Controlled Diodes Qualified per MIL-PRF-19500/241
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1N3595-1,
1N3595US-1
MIL-PRF-19500/241
3595
1N3595-1
SV359
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IPA50R500CE
Abstract: DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C
Text: Application Note AN 2012-04 V1.0 April 2012 500V CoolMOSTM CE 500V Superjunction MOSFET for Consumer and Lighting Applications IFAT PMM APS SE SL René Mente Francesco Di Domenico 500V CoolMOSTM CE Application Note AN 2012-04 V1.0 April 2012 Edition 2011-02-02
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ED-29,
IPA50R500CE
DIODE V10-20
mosfet equivalent
IPA50R280CE
LLC resonant
smps resonant llc full bridge
400W pwm smps schematic
SWITCHING bjt 500v
IPA50R280C
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Diode SJ 44
Abstract: No abstract text available
Text: SKNa 20 Stud Diode Avalanche Diode SKNa 20 Features # $%&'& *+ ,-.+ /+%+/0+ # # # )*&/&),+/10,1) 2. ,3 4566 7+/8+,1) 8+,&' )&0+ 91,* :'&00 1(02'&,3/ $(3;+ 01;+ ,*/+&;+; 0,2; <=> ? @33'1(: %1& 8+,&' .'&,+0 3/ *+&, 01(A0 =BCD $(3;+ ,3 0,2; MGNOK81( <LO?= Q R6 $
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MGNOK81(
S1828
64X4D
Diode SJ 44
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6R070C6
Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description
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IPW60R070C6
6R070C6
6R070C6 MOSFET TRANSISTOR
IPW60R070C6
JESD22
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6R070C6
Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 infineon MOSFET parameter test c6 transistor JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW60R070C6
6R070C6
6R070C6 MOSFET TRANSISTOR
IPW60R070C6
infineon MOSFET parameter test
c6 transistor
JESD22
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6r070c6
Abstract: IPW60R070C6 IF-258 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description
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IPW60R070C6
6r070c6
IPW60R070C6
IF-258
JESD22
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65F6080
Abstract: ipw65r080
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R080CFD
65F6080
ipw65r080
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65F6080
Abstract: ipw65r080 IPW65R080CFD 65F608 coolmos cfd ipw65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R080CFD
65F6080
ipw65r080
IPW65R080CFD
65F608
coolmos cfd
ipw65r
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65F6080
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R080CFD
65F6080
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TRANSISTOR SMD MARKING CODE 604
Abstract: 65F660 MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor M3 smd diode marking B3 MOSFET TRANSISTOR SMD MARKING A1 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.0, 2011-02-01 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD
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IPx65R660CFD
IPD65R660CFD
IPB65R660CFD,
IPP65R660CFD
IPA65R660CFD
TRANSISTOR SMD MARKING CODE 604
65F660
MOSFET TRANSISTOR SMD MARKING CODE A1
smd transistor M3
smd diode marking B3
MOSFET TRANSISTOR SMD MARKING A1
ipa65r
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IPP65R380C6
Abstract: 65c6380
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6
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IPx65R380C6
IPD65R380C6,
IPI65R380C6
IPB65R380C6,
IPP65R380C6
IPA65R380C6
65c6380
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65c6380
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6
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IPx65R380C6
IPD65R380C6,
IPI65R380C6
IPB65R380C6,
IPP65R380C6
IPA65R380C6
65c6380
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet 2.1, 2013-07-31 2011-02-17 Rev. 2.2, Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R380C6, IPI65R380C6
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IPx65R380C6
IPD65R380C6,
IPI65R380C6
IPB65R380C6,
IPP65R380C6
IPA65R380C6
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6R099C6
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6
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IPx60R099C6
IPA60R099C6,
IPB60R099C6
IPP60R099C6
IPW60R099C6
6R099C6
MOSFET TRANSISTOR SMD MARKING CODE A1
IPx60R099C6
IPW60R099C6
TRANSISTOR SMD MARKING CODE 604
IPB60R099C6
to247 pcb footprint
6R099
TRANSISTOR SMD MARKING CODE
IPA60R099C6
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Untitled
Abstract: No abstract text available
Text: E R E 2 4 - 0 6 • E R E 7 4 - 0 6 3 o a •6 0 0 V • Outline Drawings FAST RECOVERY DIODE : Features <i"<—î/a 'sj-'y y • Glass passivated chip High reverse voltage capability Stud mounted • Applications • • • Switching power supplies Free-wheel diode
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OCR Scan
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l95t/R89
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c81-004
Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class
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OCR Scan
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ERC81-004
e18-ts
95t/R89
Shl50
c81-004
c81 004
Diode C81 004
C81004
ERC81
T151
T460
T810
T930
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