S10045
Abstract: violet laser diode chip
Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
S10045
violet laser diode chip
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Untitled
Abstract: No abstract text available
Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
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S10045
Abstract: No abstract text available
Text: PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times
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S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
S10045
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LM136A-2.5QML
Abstract: LM136-2.5
Text: LM136A-2.5QML www.ti.com SNOSAM3D – JULY 2007 – REVISED OCTOBER 2010 LM136A-2.5QML 2.5V Reference Diode Check for Samples: LM136A-2.5QML FEATURES 1 • 2 • Available with radiation guarantee – Total Ionizing Dose 100 krad Si – ELDRS Free 100 krad(Si)
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LM136A-2
LM136A-2.5QML
LM136-2.5
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vr3v3
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S8359, S8701 High-speed photodiode with lens S8359 and S8701 are Si PIN photodiodes molded into a clear plastic package with a φ1.7 mm lens. Features Applications l Laser diode monitor high-speed APC in laser disk equipment
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S8359,
S8701
S8359
S8701
S8359:
S8701:
SE-171
KPIN1063E02
vr3v3
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S8701
Abstract: S8359 S8751
Text: PHOTODIODE Si PIN photodiode S8359, S8701 High-speed photodiode with lens S8359 and S8701 are Si PIN photodiodes molded into a clear plastic package with a φ1.7 mm lens. Features Applications l Laser diode monitor high-speed APC in laser disk equipment
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S8359,
S8701
S8359
S8701
S8359:
S8701:
SE-171
KPIN1063E01
S8751
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SMD ZENER DIODE 19v
Abstract: 8418003XA 5962-0050101QXA smd zener diode 5v smd transistor 8B 8B TRANSISTOR SMD LM136 LM136A LM136AH-2
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 12/03/99 Last Update Date: 02/13/03 Last Major Revision Date: MNLM136A-2.5-X-RH REV 0E0 2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD Si TESTED TO MIL-STD-883, METHOD 1019.5 General Description The LM136A-2.5 integrated circuit is a precision 2.5V shunt regulator diode. This
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MNLM136A-2
MIL-STD-883,
LM136A-2
M0003955
SMD ZENER DIODE 19v
8418003XA
5962-0050101QXA
smd zener diode 5v
smd transistor 8B
8B TRANSISTOR SMD
LM136
LM136A
LM136AH-2
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NDL5422P
Abstract: VMA23
Text: φ50 µm InGaAs PIN PHOTO DIODE BUTTERFLY MODULE WITH INTERNAL PRE-AMPLIFIER FOR 2.5 Gb/s NDL5422P FEATURES DESCRIPTION • INTERNAL Si PRE-AMPLIFIER IC The NDL5422P is an InGaAs PIN photo diode 6 pin butterfly package module incorporating silicon pre-amplifier IC. It is
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NDL5422P
NDL5422P
GI-50/125
24-Hour
VMA23
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5962R0050101VXA
Abstract: LM136 LM136A LM136AH-2
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 12/03/99 Last Update Date: 12/13/99 Last Major Revision Date: MNLM136A-2.5-X-RH REV 0A0 2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD Si TESTED TO MIL-STD-883, METHOD 1019.5 General Description The LM136A-2.5 integrated circuit is a precision 2.5V shunt regulator diode. This
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MNLM136A-2
MIL-STD-883,
LM136A-2
09988HRB4
H03HRE
P000372A
5962R0050101VXA
LM136
LM136A
LM136AH-2
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LM136AH
Abstract: LM136AH-2.5/883
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 12/03/99 Last Update Date: 02/14/02 Last Major Revision Date: MNLM136A-2.5-X-RH REV 0D0 2.5V REFERENCE DIODE, GUARANTEED TO 100K RAD Si TESTED TO MIL-STD-883, METHOD 1019.5 General Description The LM136A-2.5 integrated circuit is a precision 2.5V shunt regulator diode. This
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MNLM136A-2
MIL-STD-883,
LM136A-2
LM136AH
LM136AH-2.5/883
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PXR0110
Abstract: Afonics Fibreoptics
Text: PXR0110 AFONICS Performance Highlights - Si PIN diode - ST receptacle - 500MHz bandwidth - Responsivity typically 0.30A/W at 850nm with 50/125µm fibre - Operating temperature –40ºC to +85ºC - Storage temperature –40ºC to +85ºC LIMITING VALUES Continuous reverse voltage
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PXR0110
500MHz
850nm
850nm
PXR0110
Afonics Fibreoptics
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PXR0108
Abstract: Afonics Fibreoptics
Text: PXR0108 AFONICS Performance Highlights - Si PIN diode - ST receptacle - 70MHz bandwidth - Responsivity typically 0.62A/W at 850nm with 62.5/125µm fibre - Operating temperature –40ºC to +100ºC - Storage temperature –40ºC to +100ºC LIMITING VALUES Continuous reverse voltage
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PXR0108
70MHz
850nm
850nm,
PXR0108
Afonics Fibreoptics
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Untitled
Abstract: No abstract text available
Text: Gleichrichterdioden-Brücken Rectifier diode bridges Ponts redresseurs Typ V rrm V rms I fsm Type V B 40.C, 800 SI, „ Ä ä P D - '' B 80 Ç 800 Si, .D, .SD ^ V B f » C £00 Si, .D, .SD * B 380 C 800 Si, .D. .SD : 40 B 380 C 1000 Si 80 125 R /C
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1000Si
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ECG584 schottky
Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Text: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114
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ECG109
ECG110A
ECG110MP
ECG112
ECG113A
ECG114
ECG115
ECG592
ECG593
ECG694
ECG584 schottky
diode ECG109
diode ecg 588
vat 2000 ge
ECG575
Z3 DIODE
ECG577
Z4 diode
Diode ECG110A
ECG113
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ M F " / VI SI BLE LASER DIODE / NDL3410ST, NDL3410SU 5 mW, 635 nm AIGalnP MQW VISIBLE LASER DIODE FOR DVD, DVD-ROM APPLICATIONS DESCRIPTION ★ NDL341OST, NDL341OSU are AIGalnP 635 nm visible laser diodes and especially developed for DVD, DVD-ROM.
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NDL3410ST,
NDL3410SU
NDL341OST,
NDL341OSU
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Fuji Electric SM
Abstract: No abstract text available
Text: SPECIFICATION Device Name_ : High Voltage Si I icon Diode T y p e Name_ E S J A 8 3 " * 1 6 A _ Spec. : No._ :_ Fuji Electric Co.Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co.,Ltd.
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H04-004-07
ESJA83-16A
H04-004-03
ESJA83-16A
Fuji Electric SM
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage si I icon diode ESJA04-02A made by FUJI ELECTRIC CO. .LTD. 2, OUT VIEW ' Shape and dimensions are described in Fig-3. 3 IDENTIFICATION The diode shall be marked with Cathode Hark.
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ESJAD4-02A
000474E
D004743
ESJA04-|
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5003H
Abstract: equivalent diode no. for diode by 127 photo interrupter module 5002l 5002LC
Text: i Jt PHOTO INTERRUPTED •x>j PS5003HC PHOTO IC INTERRUPTER NEPOC SERIES DESCRIPTION PACKAGE DIMENSIONS Unit : mm The PS5003HC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit 3.0 ± 0 .2 including a Photo Diode in a plastic housing.
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PS5003HC
PS5003HC
equiv55XXFAMILY
PS5501
PS5501LC
5002H
PS5001
S5001H
5003H
equivalent diode no. for diode by 127
photo interrupter module
5002l
5002LC
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si2040
Abstract: MLED97
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MLED97 850nm Light Emitting Diode M otorola Preferred D evice Features: • Low Degradation AIGaAs Processing • High Power • W ell-Matched to Si Detectors • Plastic Optical Fiber POF Transmission Matched
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850nm
MLED97
si2040
MLED97
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Untitled
Abstract: No abstract text available
Text: Si SGS-THOMSON HDoœiiLKerasiiüiDes TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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TIP110/112
TIP115/117
TIP110
TIP115
TIP117.
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20kv diode
Abstract: ESJA53-20A HIGH VOLTAGE DIODE 20kv L#IF4
Text: 1, SCOPE This specification provide the ratings and the requirements for high voltage si Iicon diode ESJA53-20A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA53-20A
D0047Ã
ESJA53-CEA
20kv diode
HIGH VOLTAGE DIODE 20kv
L#IF4
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Untitled
Abstract: No abstract text available
Text: Si GEC P L E S S E Y AUGUST 1995 SEMI CO NDUC TOR S DS4166-2.3 DS1101SG RECTIFIER DIODE KEY PARAMETERS APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. V RRM F AV FSM 1800V 1730A
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DS4166-2
DS1101SG
1250A
DS1101SG18
DS1101SG17
DS1101SG16
DS1101SG15
DS1101SG14
DS1101SG13
37bflSEE
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY augustes S E M I C O N D U C T O R S DS4187-3.3 DS2002SF RECTIFIER DIODE KEY PARAMETERS 1800 lF Av, 2320A «PS« 41250A APPLICATIONS VRRM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.
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DS4187-3
DS2002SF
1250A
DS2002SF18
DS2002SF17
DS2002SF16
DS2002SF15
DS2002SF14
DS2002SF13
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Untitled
Abstract: No abstract text available
Text: • bbsa^si 0 0 5 4 m ? 40a hapx N AMER PHILIPS/DISCRETE BB804 b?E » VHF VARIABLE CAPACITANCE DOUBLE DIODE The BB804 is a variable capacitance double diode in planar technology with common cathode in a plastic SOT23 envelope. It is intended for FM tuning especially for car radios.
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BB804
BB804
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