Schaffner IU 1237
Abstract: Schaffner 1237 NSG506C 7R2R23
Text: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS
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OCR Scan
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LDP24M
-SAEJ1113A.
S0-10TM
Schaffner IU 1237
Schaffner 1237
NSG506C
7R2R23
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PDF
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0809 al
Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Text: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE
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OCR Scan
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T-91-20
O-240)
PC-029«
0809 al
HALF BRIDGE NPN DARLINGTON POWER MODULE
SGS30D
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PDF
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Diode MARKING S37
Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Text: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS
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OCR Scan
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LDP24AS
Diode MARKING S37
transient voltage suppressor diode
LDP24AS
DTR7637
DIODE MARKING CODE 623
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PDF
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transistor 467 sgs
Abstract: 0809 al diode sg 5 ts sgs30da070
Text: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE
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OCR Scan
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O-240)
PC-029«
transistor 467 sgs
0809 al
diode sg 5 ts
sgs30da070
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PDF
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SGS50DA045D
Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
Text: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING
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OCR Scan
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G03Dhba
T0-240)
O-240)
PC-029«
SGS50DA045D
SGS50DA
lta 301
L-93S
transpack transistor
SGS50DA045
SGS50D
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PDF
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NPN DARLINGTON POWER MODULE
Abstract: SGS50DB040D 9120 mosfet SGS50D
Text: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE
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OCR Scan
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DD3D72D
O-240)
PC-029«
NPN DARLINGTON POWER MODULE
SGS50DB040D
9120 mosfet
SGS50D
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PDF
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Untitled
Abstract: No abstract text available
Text: 3QE D • 7 ^3*^537 / T T S G S -T H O M S O N * 7 # [ « ^ Q m i( g ™ iD ( g § Q03Ü023 Fg M ■ 'T - '¥ \ - \ '} > s TH0MS0N S G S P 4 7 1 S G S P 472 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on Id S G S P 4 71 10 0 V
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OCR Scan
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T-39-13
SGSP471
SGSP472
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PDF
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SP571
Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field
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OCR Scan
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SGSP47
/P472¿
SGSP571/F572|
SP472
SP572
OT-93
SP471
SP571
T471/P472
SGSP57I/P572
diode sg 71
diode sg 47
sgsp571
sp 571
diode sg 55
diode c142
SG-47 diode
C144 e s j
P472
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PDF
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FTF7040
Abstract: No abstract text available
Text: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V
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FTF7040M
7168H
FTF7040M
FTF7040
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PDF
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FTF7040M
Abstract: 74ACT04 BAS28 BG40 ccd application vns Dalsa
Text: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V
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Original
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FTF7040M
7168H
74ACT04
BAS28
BG40
ccd application vns
Dalsa
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PDF
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SG2074W
Abstract: SG2077W DTL 935 PC 2077R 2066 SG2065W SG2067 ULN-2077B sg2075w BJ SMD IC
Text: SG2064 THRU SG2077 5 IL IC D N GENERAL QUAD 1.5 AMP DARLINGTON SWITCHES L IN E A R IN T E G R A T E D C IR C U IT S D ESC R IP TIO N FEATURES T h ese high-voltage, high-current Darlington arrays are monolithic bipolar devices especially designed for interfacing low-level control logic and peripheral loads
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OCR Scan
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SG2064
SG2077
16-lead
SG2077DWW
SG2065
SG2066
SG2067
SG2068
SG2069
SG2074W
SG2077W
DTL 935 PC
2077R
2066
SG2065W
ULN-2077B
sg2075w
BJ SMD IC
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PDF
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D773
Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
Text: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field
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OCR Scan
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SGSP368/P369
SGSP468/P469
SGSP568/P569
SP368
SP468
SP568
SP369
SP469
SP569
C-130
D773
P369
diode sg 46
diode sg 69
P469
SGSP368
SGSP3B8/P369
SGSP469
sgsp468
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PDF
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SG 21 DIODE SMD
Abstract: diode sg 36 SQ2014 14104BEA 14103BEA SG2023
Text: SG2000 SERIES 5 IL IC D N GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEA TU RES The SG 2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in
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SG2000
600mA
500mA
20-PIN
2XXXLV883B
SG 21 DIODE SMD
diode sg 36
SQ2014
14104BEA
14103BEA
SG2023
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PDF
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diode sg 64
Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
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SG5768/68A
SG5770/70A,
SG5772/72A,
SG5774/74A
SG25768,
SG25770,
SG6496/96A
500mA
14-PIN
diode sg 64
SG5774AJ
SG5772J
SG25768
sf 819 d
1N5772 JANTX
1N5768
SG25770J
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PDF
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Untitled
Abstract: No abstract text available
Text: r s T ^7 S G S - T H O M S O N # ffifli g®@[iiL[i(Sir®@oaD(gi R C D 1 6 -4 7 B R-C-D TERMINATOR NETWORKS FEATURES O Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot. □ Monolithic device for greater reliability.
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RCD16-47B
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PDF
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diode sg 32
Abstract: p519 em 518 diode sgsp218 IN6723 SG-45 diode P319 TL 1838 sgsp318 diode sg 82
Text: s G S“ THOMSON 07É D J 7 ^ 5 3 7 , 7 3 C. 17 2 9 7 SGSP118/P119 SGSP218/P219 . SGSP318/P319 SGSP518/PS19 ' HIGH SPEED SW ITCHIN G APPLICATIONS ABSOLUTE M A X IM U M RATINGS •d m *! ' d LM . Pto. ^"stg Ti T - 3 9 -H N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cel! silicon gate
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OCR Scan
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SGSP118/P119
SGSP218/P219
SGSP318/P319
SGSP518/PS19
OT-82
O-220
SP319
SP519
SGSP218/P219
diode sg 32
p519
em 518 diode
sgsp218
IN6723
SG-45 diode
P319
TL 1838
sgsp318
diode sg 82
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PDF
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SG10LC20USM
Abstract: fast recovery diode low voltage FT0220G
Text: Super Fast Recovery Diode Twin Diode SG10LC20USM O U TLIN E 200V 10A Fe a tu re •i& y 'fx • trr=25ns • 711^-10 K 2kV S I I • • • • Low Noise tnr=25ns Full Molded Dielectric Strength 2kV M ain U s e • y ^ 'O n - n • =^3S, OA, 88 •ÌH 8 .F A
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SG10LC20USM
FT0220G
J533-1
CJ533-1
SG10LC20USM
fast recovery diode low voltage
FT0220G
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PDF
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3731J
Abstract: No abstract text available
Text: SGI 731/SG2731/SG3731 5ILICDN GENERAL LINEAR INTEG RATED CIRCUITS DC MOTOR PULSE WIDTH MODULATOR DESCRIPTION FEATURES The SG1731 is a pulse width modulator circuit designed specifically for DC motor control. It provides a bi-directional pulse train output in response to the magnitude
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OCR Scan
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731/SG2731/SG3731
100mA
350KHz
MIL-STD-883
SG1731
1731J
2731J
3731J
16-PIN
2731N
3731J
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PDF
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diode sg 52
Abstract: diode sg 5 ts diode sg 79 SG-52 diode 131706 diode sg 38 h07v-k UL VlI15 diode sg 69 1N4007 BL
Text: Feed-through terminals for initiators and actuators DLI 2.5 DLI 2.5 LD W Dimensions Width / length / height mm with TS 35 x 7,5 W Insulation stripping length/clamping screw/screwdriver blade VDE rated data, VDE 0611 Part 1/8.92/IEC 947-7-1 Rated voltage / current / cross-section
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Original
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92/IEC
H07V-U
H07V-R
H07V-K
5/50BL
5/50RT
5/50SW
diode sg 52
diode sg 5 ts
diode sg 79
SG-52 diode
131706
diode sg 38
h07v-k UL
VlI15
diode sg 69
1N4007 BL
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PDF
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SG10SC6
Abstract: SG10SC6M FTO-220G L50Hz SG10S G10SC6M
Text: Schottky Barrier Diode Twin Diode mtm SG10SC6M OUTLINE 60 V 10 A Feature • Tj=175°C • Tj=175°C • P R R S M ^ A '^ V Î / l f f i l Œ • P rrsm • 711^-11 F Rating • Full Molded • ÎË iB IÎŒ 1 .5 k V ffilI • Dielectric Strength 1,5kV • D C /D C
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SG10SC6M
FTO-220G
50Hz-C
SG10SC6
SG10SC6M
FTO-220G
L50Hz
SG10S
G10SC6M
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PDF
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DC24V-48V
Abstract: SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 SPB24-R20 DC24V REMOTE RV-1
Text: 1/8 001-02 / 20030510 / ea224_spb.fm Power Supplies DC Input Single Output, General-Purpose The S series SPB products are wide-input super-thin type (9mm max.) available for the 24V and 48V types. The super-thin and ultra-light design has been realized by means of a high-density
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Original
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SPB05-1R0
SPB05-2R0
SPB12-R40
SPB12-R80
50MHz
DC24V-48V
SPB05-1R0
SPB05-2R0
SPB12-R40
SPB12-R80
SPB24-R20
DC24V REMOTE
RV-1
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PDF
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SPB12-R80
Abstract: SPB05-2R0 SPB05-1R0 1R0 choke A224 SPB12-R40 SPB24-R20 diode sg 69
Text: A224_SPB 1/8 TDK Switching Power Supply Super-thin type DC.24 to 48V wide input power supply S SERIES SPB [FEATURES] • Wide-input (DC.20 to 56V) super-thin type single-output power supply. • Plastic package, onboard type. • Ultra-light. • Input-output floating.
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Original
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SPB05-1R0
SPB12-R40
SPB24-R20
50MHz
SPB12-R80
SPB05-2R0
SPB05-1R0
1R0 choke
A224
SPB12-R40
SPB24-R20
diode sg 69
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PDF
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BYV 35 C
Abstract: ByV schottky BYV 35
Text: f Z * 7 71,. S G S -T H O M S O N !10»i[Li gTO(s i[l(gê_BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode
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OCR Scan
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300ns
BYV 35 C
ByV schottky
BYV 35
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PDF
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Untitled
Abstract: No abstract text available
Text: TA8409S/SG, F/FG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8409S/SG, TA8409F/FG Bridge Driver The TA8409S/SG and TA8409F/FG are bridge drivers with output voltage control. TA8409S/SG Features z Modes available CW/CCW/STOP/BRAKE z Output current up to 0.4 A (AVE) and 1.0 A (PEAK)
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TA8409S/SG,
TA8409F/FG
TA8409S/SG
TA8409F/FG
TA8409S/SG
SSOP10â
TA8409FG/SG:
TA8409FG/SG
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