BL0104-21-350
Abstract: SG DIODE diode sr 60
Text: 26mm LED LAMP CLUSTER ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0104-21-350 SUPER BRIGHT RED BLUE SUPER BRIGHT GREEN Description Features HIGH VISIBILITY. The Super Bright Red source color devices are made WATER PROOF PACKAGE WITH HOOD SUITABLE
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BL0104-21-350
DSAE5811
JAN/13/2005
BL0104-21-350
SG DIODE
diode sr 60
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diode sg 52
Abstract: diode sg 5 ts diode sg 79 SG-52 diode 131706 diode sg 38 h07v-k UL VlI15 diode sg 69 1N4007 BL
Text: Feed-through terminals for initiators and actuators DLI 2.5 DLI 2.5 LD W Dimensions Width / length / height mm with TS 35 x 7,5 W Insulation stripping length/clamping screw/screwdriver blade VDE rated data, VDE 0611 Part 1/8.92/IEC 947-7-1 Rated voltage / current / cross-section
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92/IEC
H07V-U
H07V-R
H07V-K
5/50BL
5/50RT
5/50SW
diode sg 52
diode sg 5 ts
diode sg 79
SG-52 diode
131706
diode sg 38
h07v-k UL
VlI15
diode sg 69
1N4007 BL
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diode 1n4007
Abstract: diode sg 38 131706 diode sg 46 diode,1N4007 Diode -1N4007 SG DIODE MARKING diode sg 5 ts diode 1N4007 terminal 131270
Text: Feed-through terminals for initiators and actuators DLI 2.5 DLI 2.5 LD W Dimensions Width/length/height mm With TS 35 x 7.5 W DLI 2.5 LD PNP W DLD 2.5 NPN W W 6/65/49 6/65/49 6/65/49 6/82/49 Wire strip length/terminal screw/blade dimension 7 mm/M 2.5/3.5 x 0.6
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92/IEC
diode 1n4007
diode sg 38
131706
diode sg 46
diode,1N4007
Diode -1N4007
SG DIODE MARKING
diode sg 5 ts
diode 1N4007 terminal
131270
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Untitled
Abstract: No abstract text available
Text: SGM9116 Triple, 35MHz, 6th Order HDTV Video Filter Driver PRODUCT DESCRIPTION FEATURES The SGM9116 is a video buffer which integrates triple • Triple 6th Order 35MHz HD Filters 6dB Gain rail-to-rail output driver and triple 6th output • Transparent Input Clamping
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SGM9116
35MHz,
SGM9116
35MHz
35MHz
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BAR19
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: /= T SG S-TH O M SO N BAT 41 SMALL SIGNAL SCHO I IKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex cessive voltage such as electrostatic discharges.
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ESM4045DV
Abstract: No abstract text available
Text: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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ESM4045DV
ESM4045DV
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Schaffner IU 1237
Abstract: Schaffner 1237 NSG506C 7R2R23
Text: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS
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LDP24M
-SAEJ1113A.
S0-10TM
Schaffner IU 1237
Schaffner 1237
NSG506C
7R2R23
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SG40TC10M
Abstract: schottky diode marking A7 marking c1j c1j marking
Text: Schottky Barrier Diode mtm OUTLINE Twin Diode SG 40TC 1OM 100 V 40 A Feature • Tj=175°C • Full Molded • Tj=175°C • IS I r =60|j A • • L o w Ir = 6 0 | j A • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • ig iU ÎŒ 2kV«IŒ
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SG40TC1OM
FTO-220G
50Hzr
CJ533-1
SG40TC10M
schottky diode marking A7
marking c1j
c1j marking
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Untitled
Abstract: No abstract text available
Text: HI TAC HI/ OPTOELECTRONICS S^E D MM T b SG S D0120L42 HL7838G •HIT4 GaAIAs LD Description The HL7838G is a 0.78 pm band GaAIAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
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D0120L42
HL7838G
HL7838G
44Tb205
001204b
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SGS25DB070D
Abstract: LC 0809 HALF BRIDGE NPN DARLINGTON POWER MODULE NPN DARLINGTON POWER MODULE sgs25D
Text: 3QE D • rz 7 ^ 7# TWSB? Q030bcJb D ■ SC S-TH O M SO N KilD DlH] [l[LiOU^(Q lD(gi s g S-THOMSON '" f ‘3> W 5 SG S25DB070D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION (2500V RMS) . LOW Rth JUNCTION TO CASE > FREEWHEELING DIODE
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030bc
S25DB070D
T-91-20
O-240)
PC-029«
SGS25DB070D
LC 0809
HALF BRIDGE NPN DARLINGTON POWER MODULE
NPN DARLINGTON POWER MODULE
sgs25D
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FTO-220G
Abstract: J533 J533-1
Text: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA
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SG40TC12M
120V40A
60ljA
FTO-220G
J533-1
FTO-220G
J533
J533-1
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73b21
Abstract: No abstract text available
Text: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
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T0220AC
STTB806D
STTB806DI
73b21
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diode sg 46
Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Text: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS
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STTA512D
ISOWATT220AC
STTA512F
diode sg 46
SG DIODE MARKING
diode sg 52
IGBT 2000V .50A
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diode sg 35
Abstract: diode sg 08
Text: f Z T SGS-THOMSON ^7# IM »ILI(g¥^®Rl(3S STPR1020CB(-TR HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS If(av) 2x4A V rrm 200 V trr (max) 35 ns PRELIMINARY DATASHEET FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ SUITED FOR SMPS AND DRIVES
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STPR1020CB
diode sg 35
diode sg 08
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diode 1n4007
Abstract: diode sg 38 Diode -1N4007 diode,1N4007 diode sg 5 ts f10sg 31916
Text: Feed Through Terminals Screw Clamp 35 mm DIN-Rail Terminals Multiple Level S ensors DLI 2.5 The DLI and DLD see pages 2/10-11 well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the assembly. The
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p217s
Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
Text: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate
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SGSP216/P217
SGSP316/P317
SGSP516/F517
OT-82
SGSP216
SGSP217
T0-220
SGSP316
SGSP317
SGSP516
p217s
p317
w55c
p217
ic 17358
17356
C82 to-220
DIODE C06 15
C82J
W25-C
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SGSP256
Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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SGSP154
SGSP254/255/258
SGSP354/355/356
50V/400V
SGSP254
SGSP354
OT-82
O-220
SGSP155
SGSP256
SGSP356
SP156
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SGS911
Abstract: IC 638S SGS910 BU911 1421sg S912 638s
Text: S-THOMSON 0 7 E D | 7=12^537. 0 0 1 7 4 4 0 4 | 6 7C 15 350 D T-33-29 MULT1EPITAXIAL PLANAR NPM H IG H V O L T A G E P O W E R D A R L IN G T O N S The S G S9 1 0 , S G S 9 1 1, S G S 9 1 2 and B U 910, B U 9 1 1, B U 9 1 2 are silicon multiepitaxial planar
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T-33-29
BU910
BU912
SGS910
SGS911
DU911
SGS912
BU912
D0174S2
IC 638S
BU911
1421sg
S912
638s
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STTA3006PI
Abstract: stta 50 a diode 600v high
Text: £ ÿ j SGS-THOMSON n0œilLI0ÎIM [iïlBCi STTA3006P I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V tr r V f (typ) 35ns (max) 1.5V FEATURES AND BENEFITS • SPECIFICTO ’’FREEWHEEL MODE” OPERA
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STTA3006P
STTA3006PI
stta 50 a diode 600v high
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SGS-Thomson mosfet
Abstract: No abstract text available
Text: £Z7 SGS-THOMSON ^ 7 # M »iLiOT(s iOOS STTA3006CW TURBOSWITCH ”A ”. ULTRA-FAST HIGH VOLTAGE DIODES MAIN PRODUCTS CHARACTERISTICS 2 x 15A I f (a v ) V Vf 600V rrm (typ) 35ns (max) 1.6V trr P R E L IM IN A R Y D A T A S H E E T FEATURES AND BENEFITS
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STTA3006CW
SGS-Thomson mosfet
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sg3625a
Abstract: application notes sg2525a SG3525A application note SG3527A application note SG2526A SG352SA 3527am
Text: LINEAR INTEGRATED CIRCUITS TYPES SG1525A, SG1527A, SG2525A, SG2527A, SG3525A, SG3527A PULSE-WIDTH MODULATION CONTROLLERS 02 8 0 6 , SEPTEM BER 1983 • Complete PWM Power Control Circuitry • 8-Volt to 35-Volt Operation • 5.1-Volt Reference Trimmed to ± 1 %
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SG1525A,
SG1527A,
SG2525A,
SG2527A,
SG3525A,
SG3527A
35-Volt
525A/SG1527A
sg3625a
application notes sg2525a
SG3525A application note
SG3527A application note
SG2526A
SG352SA
3527am
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SEMIKRON SKIIP 20 NAB 12 T 17
Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
Text: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A
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LT/SG3527A
Abstract: 27aj LT/SG3525A
Text: Regulating Pulse Width Modulators KATURCS DCSCRIPTIOn •Undervoltage Lockout with Hysteresis ■Guaranteed 1% 5.1V Reference ■Guaranteed 10mV/1000 Hr Long Term Stability ■Latching PWM ■8V to 35V Operation ■100Hz to 400kHz Oscillator ■400mA Source and Sink Current
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LT/SGI525A,
LT/SG3525A
LT/SGI527A,
LT/SG3527A
10mV/1000
100Hz
400kHz
400mA
LT1525A
LT1527A
LT/SG3527A
27aj
LT/SG3525A
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