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    DIODE SEMIKRON 103 Search Results

    DIODE SEMIKRON 103 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SEMIKRON 103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    300f diode

    Abstract: semikron skke 360 300f diodes Diode semikron 103
    Text: VRSM VRRM IFRMS maximum values for continuous operation 450 A V IFAV (sin. 180; Tcase = 103 °C; 50 Hz) 290 A 1000 SKKE 600 F 10 1200 SKKE 600 F 12 Symbol Conditions IFDC IFDC IFDC Tcase = 92 °C Tamb = 45 °C; Rthha = 0,05 °C/W Tamb = 45 °C; Rthha = 0,15 °C/W


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    BC POWER MODULE

    Abstract: diode F4 8G
    Text: BAV 100.BAV 103 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *+ Surface mount diode Ultrafast silicon rectifier diodes  +   , =    9


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    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 SKM 75 GAL 123 IGBT skm 50 gb 101 d skm 152 ga SKM 200 GB 102 D semikron skm 152 ga skm 50 gb 100 d skm 100 gb 101 d skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM IFSM I2t Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040


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    tyco igbt

    Abstract: tyco igbt 1200V V23990-K249-A-PM miniskiip 2 miniskiip igbt tyco pim miniskiip 29 igbt tyco
    Text: V23990-K249-A-PM preliminary datasheet V23990-K249-A-01-14 MiniSKiiP 2nd Gen. PIM Size 3, 1200V / 50A Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Symbol Values max. Unit


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    PDF V23990-K249-A-PM V23990-K249-A-01-14 Tj125 D-85521 Page14 Page15 tyco igbt tyco igbt 1200V V23990-K249-A-PM miniskiip 2 miniskiip igbt tyco pim miniskiip 29 igbt tyco

    tyco igbt

    Abstract: V23990-K239-F-PM tyco igbt 1200V function of igbt igbt tyco "Power Switches" V23990-K239-F-01-14 break resistor in igbt igbt sixpack SEMIKRON
    Text: V23990-K239-F-PM preliminary datasheet V23990-K239-F-01-14 MiniSKiiP 2nd Gen. SIXPACK Size 2, 1200V / 50A Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Values max. Unit VCE 1200 V 42 55 83 A W VGE 74 113 ±20 Tj”125°C VGE=15V VCC=900V


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    PDF V23990-K239-F-PM V23990-K239-F-01-14 Tj125 D-85521 tyco igbt V23990-K239-F-PM tyco igbt 1200V function of igbt igbt tyco "Power Switches" V23990-K239-F-01-14 break resistor in igbt igbt sixpack SEMIKRON

    Untitled

    Abstract: No abstract text available
    Text: BAV 100.BAV 103 *+ Surface mount diode Ultrafast silicon rectifier diodes  +   , =    9  )  ) & 2&  9  )  ) &     ) & *< : 8  6; : 5 1 #=2 # 8 /  #;? # /58 /58 /58   )    ) +  6; : 58 1


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    BAV 62

    Abstract: No abstract text available
    Text: BAV 100.BAV 103 *+ Surface mount diode Ultrafast silicon rectifier diodes  +   , =    9  )  ) & 2&  9  )  ) &     ) & *< : 8  6; : 5 1 #=2 # 8 /  #;? # /58 /58 /58   )    ) +  6; : 58 1


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    PDF 8G/78 BAV 62

    diode BY 028

    Abstract: BAV 103 Diode semikron 103 diode bav
    Text: BAV 100.BAV 103 *+ Surface mount diode Ultrafast silicon rectifier diodes  +   , =    9  )  ) & 2&  9  )  ) &     ) & *< : 8  6; : 5 1 #=2 # 8 /  #;? # /58 /58 /58   )    ) +  6; : 58 1


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    semikron IGBT

    Abstract: semikron skiip 83
    Text: SKiiP 11ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP 1 ICRM VGES Tj • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections


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    PDF 11ACC12T4V10 11ACC12T4V10 E63532 semikron IGBT semikron skiip 83

    Diode semikron 103

    Abstract: semikron IGBT semikron skiip 81 AN 15 T semikron IGBT circuit
    Text: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP 1 ICRM VGES Tj • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections


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    PDF 12ACC12T4V10 12ACC12T4V10 E63532 Diode semikron 103 semikron IGBT semikron skiip 81 AN 15 T semikron IGBT circuit

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 1 Tj = 175 °C ICRM VGES VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 12 A 12 A Ts = 70 °C 12 A 8 A 24


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    PDF 12ACC12T4V10

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 1 Tj = 175 °C ICRM VGES VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 12 A 12 A Ts = 70 °C 12 A 8 A 24


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    PDF 12ACC12T4V10

    smd C105

    Abstract: diode smd d232 SEMIKRON dynamic test BOARD
    Text: Board 2//3S SKYPER 42 R Absolute Maximum Ratings Symbol SKYPER Values Unit Vs Supply voltage primary 16 V IoutPEAK Output peak current 30 A IoutAVmax Output average current 150 mA fmax Max. switching frequency 100 kHz VCE Collector emitter voltage sense across


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    PDF Visol12 Rev03 smd C105 diode smd d232 SEMIKRON dynamic test BOARD

    semikron IGBT

    Abstract: miniskiip 29
    Text: SKiiP 24ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP 2 ICRM VGES Tj • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections


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    PDF 24ACC12T4V10 24ACC12T4V10 E63532 semikron IGBT miniskiip 29

    Untitled

    Abstract: No abstract text available
    Text: seMIKROn zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 240 A 270 A 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C) SKKT SKKT SKKH SKKH V drm dt)cr 240 A 270 A Itav (sin. 180, Tcase —. . .)


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    PDF 131/ered T01909 KT13110

    IEC192-2

    Abstract: SKMD200E TBA80c SKKD50E04 SKKD50E semikron skmd 100
    Text: SIE D • Ö13bb71 GODBMSS Ihh « S E K G s e m ik r d n ~SEMIKRON INC V rsm V rrm Ifrms maximum value for continuous operation 110 A | 325 A V Ifav (sin. 180;Tease = 85°C; 50 Hz) 207 A 48,5 A Ultrafast Epitaxial Diode Modules SEMIPACK 1 SKKD 50 E SKND 50 E


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    PDF 13bb71 SKMD200E SKKD50 2450LJ- B2-15 fll3bb71 0QD3M30 1111inâ 1111ii SKND50E IEC192-2 TBA80c SKKD50E04 SKKD50E semikron skmd 100

    33B3 diode

    Abstract: S/33B3 diode
    Text: 51E D • Ô13bb71 DOÜ33b3 BISEK6 se MIKR dn SEMIKRON INC V V 125 A ITAV sin. 180; Tease = 78 °C 80 A V/ns - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D SKKH 72/08 D LO 700 SEMIPACK 1 Thyristor/ Diode Modules It r m s (maximum value for continuous operation)


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    PDF 13bb71 SKKT72 fll3bb71 D0D33bb 33B3 diode S/33B3 diode

    Untitled

    Abstract: No abstract text available
    Text: SEMIKRON zurück V rsm V rrm dv/ Itrms (maximum value for continuous operation V drm dt)cr 125 A V V V/|xs 700 600 500 SKKT 71/06 D 900 800 SEMIPACK 1 Thyristor / Diode Modules Itav (sin. 180; T oase = 78 °C) 80 A - - SKKH 72/06 D 500 SKKT 71/08 D SKKT 72/08 D1> SKKH 71/08 D


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    PDF Tvjs125

    Untitled

    Abstract: No abstract text available
    Text: SEMIKRON V rsm V rrm Ifrms maximum value for continuous operation 110 A | 325 A V Ifav (sin. 180; T case = 85 °C; 50 Hz) 48,5 A 207 A Ultrafast Epitaxial Diode Modules 100 SKKD 50 E 01 SKND 50 E 01 SKMD 202 E 01 SKND 202 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02


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    PDF O-240

    Untitled

    Abstract: No abstract text available
    Text: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )


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    PDF SKKD15 SKKE15

    Untitled

    Abstract: No abstract text available
    Text: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56


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    PDF 13bb71

    Untitled

    Abstract: No abstract text available
    Text: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150


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    PDF 13bb71 00D3bMb Characteristic21

    Untitled

    Abstract: No abstract text available
    Text: S1E SEMIKRON Conditions ' VcES V cgr lc SEMIKRON Values . 101 D i . 121 D 1000 1000 R ge = 20 k£2 Tease = 2 5 /8 0 °C Tease = 2 5 /8 0 °C ICM V g es Ptot Tj, Tstg I I 1200 1200 ±20 AC, 1 min humidity climate D IN 4 0 04 0 D IN I EC 6 8 T.1 Units V V


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    Untitled

    Abstract: No abstract text available
    Text: 51E D Ô13bb71 DDD371Ô M7T se MIKRDN SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Ptot Tj, Tslg Visol hum idity climate C onditions 1 • SEK G Values . 102 D 122 D 1000 I 1200 1000 1 1200 400/300 800/600 ±20 2500 - 5 5 . . .+150


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    PDF 13bb71 DDD371Ã 013bb71 G037E5