iss314
Abstract: log sheet air conditioning Schottky Diode 40V 5A dual Schottky Diode 40V 5A MLP832 ZXMNS3BM832
Text: ZXMNS3BM832 MPPS Miniature Package Power Solutions 30V N Channel MOSFET & 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY N Channel MOSFET- V BR DSS =30V; RSAT(on) =0.18 ; D = 2.7A Schottky Diode - VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovation 3mm x 2mm MLP this combination dual
|
Original
|
ZXMNS3BM832
500mV
iss314
log sheet air conditioning
Schottky Diode 40V 5A dual
Schottky Diode 40V 5A
MLP832
ZXMNS3BM832
|
PDF
|
XBS303V17
Abstract: "Schottky Barrier Diode"
Text: XBS303V17 ETR1614-001 Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V
|
Original
|
XBS303V17
ETR1614-001
XBS303V17
"Schottky Barrier Diode"
|
PDF
|
SBH1503S
Abstract: No abstract text available
Text: SBH1503S Ordering number : ENA0702 SANYO Semiconductors DATA SHEET SBH1503S Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH1503 applied sets to be made smaller. Low forward voltage VF max=0.3V .
|
Original
|
SBH1503S
ENA0702
SBH1503
A0702-3/3
SBH1503S
|
PDF
|
a0703
Abstract: SBM1503S
Text: SBM1503S Ordering number : ENA0703 SANYO Semiconductors DATA SHEET SBM1503S Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBM1503 applied sets to be made smaller. Low forward voltage VF max=0.3V .
|
Original
|
SBM1503S
ENA0703
SBM1503
A0703-3/3
a0703
SBM1503S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SBM1503S Ordering number : ENA0703 SANYO Semiconductors DATA SHEET SBM1503S Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBM1503 applied sets to be made smaller. Low forward voltage VF max=0.3V .
|
Original
|
SBM1503S
ENA0703
SBM1503
A0703-3/3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SBH1503S Ordering number : ENA0702 SANYO Semiconductors DATA SHEET SBH1503S Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH1503 applied sets to be made smaller. Low forward voltage VF max=0.3V .
|
Original
|
SBH1503S
ENA0702
SBH1503
A0702-3/3
|
PDF
|
XBS303V17R-G
Abstract: XBS303V17R XBS30
Text: XBS303V17R-G ETR1614-001a Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
|
Original
|
XBS303V17R-G
ETR1614-001a
XBS303V17R-G
XBS303V17R
XBS30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SBS818 Ordering number : ENA0471 SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise.
|
Original
|
SBS818
ENA0471
A0471-4/4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SBS818 Ordering number : ENA0471 SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise.
|
Original
|
SBS818
ENA0471
A0471-4/4
|
PDF
|
Schottky Barrier Diode
Abstract: XBS303V19R XBS303V19R-G
Text: XBS303V19R-G ETR16022-001 Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
|
Original
|
XBS303V19R-G
ETR16022-001
303V19
Schottky Barrier Diode
XBS303V19R
XBS303V19R-G
|
PDF
|
SBS818
Abstract: No abstract text available
Text: SBS818 Ordering number : ENA0471 SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise.
|
Original
|
SBS818
ENA0471
A0471-4/4
SBS818
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SBS818 Ordering number : ENA0471A SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise
|
Original
|
SBS818
ENA0471A
A0471-6/6
|
PDF
|
SBH15-03
Abstract: No abstract text available
Text: Ordering number : ENN6968A SBH15-03 Schottky Barrier Diode SBH15-03 30V, 1.5A Rectifier Features • Supports automatic mounting and permits SBH15-03 applied sets to be made smaller. Low forward voltage VF max=0.3V . Average rectified current : IO=1.5A. unit : mm
|
Original
|
ENN6968A
SBH15-03
SBH15-03]
SBH15-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SBH15-03 Ordering number : ENN6968B SBH15-03 Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH15-03 applied sets to be made smaller. Low forward voltage VF max=0.3V . Average rectified current : IO=1.5A.
|
Original
|
SBH15-03
ENN6968B
SBH15-03
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0471A SBS818 Schottky Barrier Diode http://onsemi.com 30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise
|
Original
|
ENA0471A
SBS818
A0471-6/6
|
PDF
|
A04716
Abstract: A0471 emh8
Text: SBS818 Ordering number : ENA0471A SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low forward voltage (IF=2.0A, VF max=0.52V)
|
Original
|
ENA0471A
SBS818
900mm2
A0471-6/6
A04716
A0471
emh8
|
PDF
|
SBM30-03
Abstract: No abstract text available
Text: Ordering number : ENN6967A SBM30-03 Schottky Barrier Diode SBM30-03 30V, 3A Rectifier Features • Supports automatic mounting and permits SBM30-03 applied sets to be made smaller. Low forward voltage VF max=0.4V . Average rectified current : IO=3A. unit : mm
|
Original
|
ENN6967A
SBM30-03
SBM30-03]
SBM30-03
|
PDF
|
D1003
Abstract: SBM30-03
Text: SBM30-03 Ordering number : ENN6967B SBM30-03 Schottky Barrier Diode 30V, 3A Rectifier Features • • • Supports automatic mounting and permits SBM30-03 applied sets to be made smaller. Low forward voltage VF max=0.4V . Average rectified current : IO=3A.
|
Original
|
SBM30-03
ENN6967B
SBM30-03
D1003
|
PDF
|
CB803-03
Abstract: No abstract text available
Text: CB803-03 2.0A (30V / 2.0A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø3.0 ø0.8 5.0 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Cathode mark 02 Lot No. Applications 803-03
|
Original
|
CB803-03
CB803-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDFS2P753Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low
|
Original
|
FDFS2P753Z
FDFS2P753Z
500mV
580mV
|
PDF
|
FDFS2P753Z
Abstract: No abstract text available
Text: FDFS2P753Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low
|
Original
|
FDFS2P753Z
FDFS2P753Z
500mV
580mV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CB803-03 2.0A (30V / 2.0A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø3.0 ø0.8 5.0 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Cathode mark 02 Lot No. Applications 803-03
|
Original
|
CB803-03
|
PDF
|
FDFS2P753Z
Abstract: No abstract text available
Text: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low
|
Original
|
FDFS2P753Z
FDFS2P753Z
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ±
|
OCR Scan
|
5011ziEÂ
li501
|
PDF
|