BAR65-02W
Abstract: SCD80
Text: BAR65-02W Silicon RF Switching Diode Low loss, low capacitance PIN-diode 2 Band switch for TV-tuners Series diode for mobile communication transmit-receiver switch 1 Type BAR65-02W Marking N VES05991 Pin Configuration 1=C 2=A Package SCD80 Maximum Ratings
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BAR65-02W
VES05991
SCD80
Jul-06-2001
BAR65-02W
SCD80
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Untitled
Abstract: No abstract text available
Text: BAR 65-02W Silicon RF Switching Diode Low loss, low capacitance PIN-diode 2 Band switch for TV-tuners Series diode for mobile communication transmit-receiver switch 1 VES05991 Type Marking Pin Configuration Package BAR 65-02W N 1=C SCD-80 2=A Maximum Ratings
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5-02W
VES05991
SCD-80
Oct-05-1999
100MHz
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BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
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SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
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M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
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Untitled
Abstract: No abstract text available
Text: PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.
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ZEN056V075A48LS
SCD27365
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Zener Diode 5A
Abstract: No abstract text available
Text: PRODUCT: ZEN132V230A16LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27362 REV LETTER: D REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.
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ZEN132V230A16LS
SCD27362
Zener Diode 5A
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Untitled
Abstract: No abstract text available
Text: PRODUCT: ZEN098V130A24LS PolyZen DOCUMENT: SCD27645 REV LETTER: D REV DATE: MAY 16, 2011 PAGE NO.: 1 OF 7 Polymer Enhanced Zener Diode Micro-Assemblies Specification Status: Preliminary GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.
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ZEN098V130A24LS
SCD27645
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Untitled
Abstract: No abstract text available
Text: PRODUCT: ZEN065V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27363 REV LETTER: E REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.
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ZEN065V130A24LS
SCD27363
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BAT62
Abstract: BAT62-02W SCD80
Text: BAT62-02W Silicon Schottky Diode Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration BAT62-02W 2 1=C Package 2=A SCD80 Maximum Ratings
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BAT62-02W
VES05991
SCD80
Aug-24-2001
BAT62
BAT62-02W
SCD80
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Untitled
Abstract: No abstract text available
Text: PRODUCT: ZEN164V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27330 REV LETTER: D REV DATE: MAY 29, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable
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ZEN164V130A24LS
SCD27330
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BBY52-02W
Abstract: SCD80 MARKING 02W bby5202w
Text: BBY52-02W Silicon Tuning Diode • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation 2 • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY52-02W K 1=C SCD80
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BBY52-02W
VES05991
SCD80
Jul-02-2001
BBY52-02W
SCD80
MARKING 02W
bby5202w
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Untitled
Abstract: No abstract text available
Text: PRODUCT: ZEN056V230A16LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27327 REV LETTER: E REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable
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ZEN056V230A16LS
SCD27327
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Untitled
Abstract: No abstract text available
Text: PRODUCT: ZEN132V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD26665 REV LETTER: G REV DATE: MAY 12, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable
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ZEN132V130A24LS
SCD26665
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Untitled
Abstract: No abstract text available
Text: PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD26730 REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable
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ZEN056V130A24LS
SCD26730
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BAS16-02W
Abstract: BAS1602W SCD80
Text: BAS16-02W Silicon Switching Diode For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS16-02W 3 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current
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BAS16-02W
VES05991
SCD80
Aug-29-2001
EHB00025
BAS16-02W
BAS1602W
SCD80
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Q62702-A1028
Abstract: No abstract text available
Text: BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration Package BAT 62-02W L 1=C SCD-80
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2-02W
VES05991
SCD-80
Q62702-A1028
Jul-02-1998
Q62702-A1028
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Q62702-A1239
Abstract: No abstract text available
Text: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage
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6-02W
VES05991
Q62702-A1239
SCD-80
Jul-24-1998
EHB00023
Q62702-A1239
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a1216 transistor
Abstract: Q62702-A1216
Text: BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners 2 • Series diode for mobile communication transmit-receiver switch 1 VES05991 Type Marking Ordering Code Pin Configuration Package
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5-02W
VES05991
Q62702-A1216
SCD-80
Jun-18-1998
specifie-02W
100MHz
a1216 transistor
Q62702-A1216
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str 6707
Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Text: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
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M3D177
BAT254
BAT254
OD110
MAM214
OD110)
SCDS48
117021/1100/01/pp8
str 6707
BP317
Diode smd code 805
SMD 2211
smd schottky diode marking 72
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Untitled
Abstract: No abstract text available
Text: BAT63. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • For high-speed applications • Zero bias detector diode • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT63-02V BAT63-07W " ! , ,
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BAT63.
BAT63-02V
BAT63-07W
BAT63-02V*
OT343
BAT63-02V
BAT63-07W
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BBY51-02W
Abstract: SCD80 MARKING 02W
Text: BBY51-02W Silicon Tuning Diode High Q hyperabrupt tuning diode 2 Low series inductance Designed for low tuning voltage operation For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY51-02W I 1=C SCD80 2=A
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BBY51-02W
VES05991
SCD80
Jul-04-2001
EHD07128
EHD07129
BBY51-02W
SCD80
MARKING 02W
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration BAR 65-02W
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OCR Scan
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PDF
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5-02W
Q62702-A1216
SCD-80
100MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75
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OCR Scan
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PDF
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6-02W
Q62702-A1239
SCD-80
100//A
EHN00016
100ns,
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration Package BAR 65-02W
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OCR Scan
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PDF
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5-02W
Q62702-A1216
SCD-80
Q1SD53M
100MHz
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