s838
Abstract: S8223 S7329-01
Text: PREVIOUS DATA PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application. S8387 offers high sensitivity in the violet
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S8387
SE-171
KPIN1053E02
s838
S8223
S7329-01
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laser diode 780 nm
Abstract: S8223 S7329-01 S8314 photodiode Laser Diode 780 IR-Laser-Diode s7836 S3321-04 S7762 S8314
Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application. S8387 offers high sensitivity in the violet
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S8387
SE-171
KPIN1053E02
laser diode 780 nm
S8223
S7329-01
S8314 photodiode
Laser Diode 780
IR-Laser-Diode
s7836
S3321-04
S7762
S8314
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
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S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
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S8380-512Q
Abstract: S8381-256Q S8380 S8380-128Q S8380-256Q S8381-1024Q S8381-512Q
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
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S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
S8380-512Q
S8381-256Q
S8380-128Q
S8380-256Q
S8381-1024Q
S8381-512Q
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
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S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
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S8380
Abstract: S8380-128Q S8380-256Q S8380-512Q S8381-1024Q S8381-256Q S8381-512Q YM 512
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
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S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
S8380-128Q
S8380-256Q
S8380-512Q
S8381-1024Q
S8381-256Q
S8381-512Q
YM 512
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region λp=750 nm .
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S8380/S8381
S8380
S8381
S8380-128Q)
S8380-256Q,
S8381-256Q)
S8380-512Q,
S8381-512Q)
S8381-1024Q)
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Selection guide
Abstract: United Detector Technology PSD
Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable
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KACC0001E02
Selection guide
United Detector Technology PSD
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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MONOpack LT
Abstract: lt 5234 blzf5.08 Y255 AM26C31 TMC453 Direction Finding system A8191 V5234 LT 485
Text: MONOpack LT - 2500mA Stepper Motor Controller / Driver Module Version: 1.23 Datum 1.10.2004 GmbH & Co KG, Sternstraße 67, D - 20 357 Hamburg, Germany Phone +49-40-51 48 06 - 0, FAX: +49-40-51 48 06 - 60 http://www.trinamic.com 2 TRINAMIC MONOpack Lt Manual
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2500mA
2500mA
TMC453
485-Interface.
MONOpack LT
lt 5234
blzf5.08
Y255
AM26C31
Direction Finding system
A8191
V5234
LT 485
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S5930
Abstract: S5930-256S S5930-512S S5931 S5931-1024S S5931-512S high frequency linear cmos IMAGE SENSOR 144P-RNO S8382
Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S5930/S5931
SE-171
KMPD1018E03
S5930
S5930-256S
S5930-512S
S5931
S5931-1024S
S5931-512S
high frequency linear cmos IMAGE SENSOR
144P-RNO
S8382
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S8382
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S5930/S5931
SE-171
KMPD1018E03
S8382
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SOP8 8002 Amplifier
Abstract: SCR s838 TRANSISTOR s838 4606 MOSFET INVERTER transistor SMD DK QB Marking Code SMD CM sot-23-5 4606 inverter reg EL34 SMD MOSFET DRIVE DATASHEET 4606 voltage regulator SOT-223-4 C5 87
Text: Shortform Catalog June 2003 Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel +1 408 944-0800 • fax +1 408 944-0970 Micrel Shortform Catalog June 2003 2003 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any
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TinyFE81090
M-0009
SOP8 8002 Amplifier
SCR s838
TRANSISTOR s838
4606 MOSFET INVERTER
transistor SMD DK QB
Marking Code SMD CM sot-23-5
4606 inverter reg
EL34
SMD MOSFET DRIVE DATASHEET 4606
voltage regulator SOT-223-4 C5 87
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spot light size photodiode
Abstract: S8382
Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S5930/S5931
S5930
S5931
SE-171
KMPD1018E04
spot light size photodiode
S8382
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C10500
Abstract: linear CCD 512 TDI cmos image sensor
Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide
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KAPD0002E12
C10500
linear CCD 512
TDI cmos image sensor
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surface mounted transistor 1BW 17
Abstract: 74VHCT244AFT S390X Hamamatsu Color sensor address MSTAR
Text: TECHNICAL INFORMATION SD-26 Characteristic and use of NMOS linear image sensors Contents 1. Introduction . 4 2. Structure and basic operation . 4
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SD-26
SE-171
KMPD9001E05
surface mounted transistor 1BW 17
74VHCT244AFT
S390X
Hamamatsu Color sensor address
MSTAR
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Untitled
Abstract: No abstract text available
Text: TECHNICAL INFORMATION SD-26 Characteristic and use of NMOS linear image sensors Contents 1. Introduction . 4 2. Structure and basic operation . 4
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SD-26
SE-171
KMPD9001E06
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Image sensors
Abstract: ccd sensors
Text: Image sensors 1 CCD image sensors 1-1 1-2 1-3 1-4 Structure and operating principle Characteristics How to use New approaches CHAPTER 05 6 Photodiode arrays with amplifiers 6-1 6-2 6-3 6-4 6-5 Features Structure Operating principle Characteristics How to use
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14-Bit
Image sensors
ccd sensors
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HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010
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HX8369-A00-DS
HX8369-A00
480RGB
285October,
HX8369
S1129
Himax
23 PIN TFT MOBILE DISPLAY
HX5186-A
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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OCR Scan
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PDF
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mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories
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MS800MM0S
MC3870
MC14S00B,
MC141000/1206
M2900
M10800
M6800
MC14500B,
MC141000/1200
mcm6830
EXORCISER motorola M68MM01A
7642T
MC68B54
transistor bf 175
motorola application note 6809 6844
MMS1117
EXORCISER motorola M68MM01A2
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