Untitled
Abstract: No abstract text available
Text: S6K thru S6QR Silicon Standard Recovery Diode VRRM = 800 V - 1200 V IF = 6 A Features • High Surge Capability • Types from 800 V to 1200 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.
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DO-203AA)
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Untitled
Abstract: No abstract text available
Text: S6K thru S6QR Silicon Standard Recovery Diode VRRM = 100 V - 1200 V IF = 6 A Features • High Surge Capability • Types up to 1200 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified
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Untitled
Abstract: No abstract text available
Text: S6K thru S6QR Silicon Standard Recovery Diode VRRM = 100 V - 1200 V IF = 6 A Features • High Surge Capability • Types up to 1200 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified
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SR 1503
Abstract: STM-16 receptacle LC plastic dfb laser diode cwdm dfb laser diode 1577 S6M1 mitsubishi TOSA
Text: WZ700071A 1/4 MITSUBISHI (OPTICAL DEVICES) ES Product FU-60RDF-S6M1x 1.55 µm CWDM DFB-LD WITH LC RECEPTACLE FOR LONG HAUL APPLICATIONS DESCRIPTION FU-60RDF-S6M1x is a 1.55µm DFB-LD TOSA (Transmitter Optical Subassembly) with a single-mode fiber stub. This module is designed for use in high-speed, long haul
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WZ700071A
FU-60RDF-S6M1x
FU-60RDF-S6M1x
OC-48,
STM-16)
SR 1503
STM-16
receptacle LC plastic
dfb laser diode cwdm
dfb laser diode 1577
S6M1
mitsubishi TOSA
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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transistor dk
Abstract: dk transistor
Text: SKM 111AR MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions P, Q DK R%+ 8 * 55 /.&)3L45) 5;),4=4)0 Values Units ABB DBB @AKBC IBB X DB 9 ZB GGG [ AKB @ADKC S 1 1 S R% DKBB S <¥ Q 9 <6 DBB 1 <¥V Q 9 <6V IBB 1 SM6 <M <MV SW6 P2Y+ @P5.:C S45/* P5 Q DK @UBC R%
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111AR
transistor dk
dk transistor
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5d 3kv
Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage
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REV9111
PD-DB-0409
5d 3kv
equivalent components of diode 1N4249
Semtech alpac
alpac scba2
SCPA2
single phase half controlled full wave bridge rec
semtech kv-pac
SI96-01
2PFT2
SCBAR4F
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2KV DIODE
Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical
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PD-DB-0810
2KV DIODE
semtech alpac
three phase full wave uncontrolled rectifier
sdhd5k
1N6467
fast recovery diode 1a trr 200ns
SCPA2
1N6123 JAN
1N6463 JANTX
73A 552
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BUT11APX equivalent
Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BUT11APX equivalent
BU4508DX equivalent
2SD1876
2Sd1651 equivalent
BYS21-45
smd zener diode color band
2SD1878 data sheet
2SC5296 equivalent
BT151-600R
BUK98150 spice
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BU4508DX equivalent
Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
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BT148-600R
BT148-400R
BU4508DX equivalent
BUT11APX equivalent
S0806MH
P0201MA TO92
BT136 application note
diode cross reference BYW96E
ct 2A05 diode
BU2508Dx equivalent
ST2001HI equivalent
BU2508DF equivalent
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S6M100
Abstract: STPS6M100DEE-TR stps6m100dee FR4 epoxy
Text: STPS6M100DEE High voltage power Schottky rectifier Datasheet production data Features NC • Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ High junction temperature capability ■ ECOPACK 2 compliant component
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STPS6M100DEE
STPS6M100DEE-TR
S6M100
STPS6M100DEE-TR
stps6m100dee
FR4 epoxy
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S2M diode
Abstract: diode S6M diode s2m IN5622 1N5614 JANTX IN5618 DIODE in5616 1N5614 1N5616 1N5618
Text: SEHTECH CORP SfiE D 1N5614 1N5616 1N5618 S2M S4M S6M 1N5622 SOM • 013^13^ OODBbSO ATS * S E T STANDARD RECOVERY QUICK REFERENCE AXIALLEADED HERMETICALLY SEALED DATA STANDARD RECOVERY RECTIFIER DIODE • Vr • If • trr • Vf = 200 - 1000V = 2.0A = 2 i.S
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1N5614
1N5616
1N5618
1N5620
1N5622
DS-047
S2M diode
diode S6M
diode s2m
IN5622
1N5614 JANTX
IN5618 DIODE
in5616
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Untitled
Abstract: No abstract text available
Text: i*imi ra@iû gs SCS-THOMSON 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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2N6059
2N6059
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Untitled
Abstract: No abstract text available
Text: 1N5614 1N5616 1N5618 1N5620 1N5622 R E C T IF IE R ’ u p t 0 1 k V ’ 2 A ’ 2 jls January 7, 1998 QUICK REFERENCE DATA Vr = 200- 1000V If = 2.0A trr = 2\iS VF = 1.1V S2M S4M S6M S8M SOM TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com AXIALLEADED HERMETICALLY SEALED
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1N5614
1N5616
1N5618
1N5620
1N5622
TEL805-498-2111
1N5614
1N5616
1N56181N5620
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fuji ipm
Abstract: 7MBP75RE120 hcpl 0350 AC2500 HCPL-4504 diode S6M
Text: SPECIFICATION D e v ic e N a m e : IG B T -IP M Type S pec. Nam e N o. 7M BP75R E1 20 ; M S6M 0350 F u ji E le c t r ic C o . , L td . M a ts u m o to DATE H DRAWN i CHECKED ! NAME F a c to r y APPROVED Fuji E le ctric Co.,Ltd. Jarf C i Ya.maqacl i .i *]_ O u J lilM )
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16-n0.
7MBP75RE120
fuji ipm
7MBP75RE120
hcpl 0350
AC2500
HCPL-4504
diode S6M
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100C
Abstract: 7MBR50SB140-01
Text: Dev ice Name Type Name Spec. DATE DRAWN jUh- 2 ~'ev ChCCKED7ur^~ 2. ~cn> NAME No. Date DWG.NO. This maierisl aftd ihe tnlorrcution herein It the property of Fuji Hiectnc Co.tid.Thsy shill be neither reproduced, copied, lens, or disclosed 'ift any way whatsoever or the use of #ny
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7MBR50SB140-01
H04-004-05
H04-004-Ã
100C
7MBR50SB140-01
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100C
Abstract: 600Y 7MBR35SB120-01 7mbr35sb120
Text: SPEC 1F 1CAT 1ON IGBT Module Device Name >- O. ~ £ 58«* s seB a a • o 0! " Q o aü •- Ç ^ a> - Type Name : Spec. : Date No. 7MBR35SB120-01 MS6M 0554 Jun. - 02 - 2000 : 51 l ì ” fi¿ i •g * 5 £ o ï Eç i -c « “* «» > • îp»>■c>■t“ fin
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7MBR35SB120-01
-\-H04-004-05
H04-004-06
H04-004-03
100C
600Y
7MBR35SB120-01
7mbr35sb120
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100C
Abstract: 7MBR25SA140-01 H04 D 35 inverter circuit rockwell inverter
Text: This m a te ria l and the In fo rm a tio n herein is the p ro p e rty of Fuji Electnc C o .Ltd.T hey shall be neither reproduced, copied, le n t. o r disclosed In any w a y w h atso ever fo r the use o f any third parry.no r used to r rhe m a n u fa c tu rin g p u rpose s w ith o u t
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7MBR25SA140-01
H04-004-05
H04-004-03
100C
7MBR25SA140-01
H04 D 35 inverter circuit
rockwell inverter
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TA5C
Abstract: 100C 7MBR10SA060D-01
Text: Thìi, m a teria l and ihe Inlurmation ,">ercin is llié pruperty o l:u|i ttectoc Co U J .llie y shall ;e neUlier repioilucecl. copiaci toni, or iiio ciossii in any way whatsoevo/ for itie use ol any thiid ("'arTy.nor usad (or ;lie manufacturing purposes w lih o u t
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7MBR10SA060D-01
H04-004-05
10tlB_
H04-004-03
TA5C
100C
7MBR10SA060D-01
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VLN 2003
Abstract: zener diode 1.5V IR9161 diode k70 IR9161N
Text: SHARP ELEK/ MELEC D IV 7 -7 3 -5 " 3 1SE D | 01007=18 Low Power Quad Comparator 3 | ÌR9161/IR9161N IR9161/IR9161N • 0005072 Description ■ Comparator Pin Connections The IR9161/IR9161N is a low power guad compa rator capable of controlling a supply current, input
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R9161/IR9161N
IR9161/IR9161N
16-pin
IR9161)
IR9161N)
30Okn
560kil
100kil
VLN 2003
zener diode 1.5V
IR9161
diode k70
IR9161N
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LM2904F
Abstract: No abstract text available
Text: THOMSON SEMICONDUCTORS LM158 LM258 LM358 LM2904 LOW POW ER D UAL O PER A TIO N A L A M P L IFIE R S LOW POWER D UAL O PER A TIO N A L A M P L IFIE R S These circuits consist of tw o independent, high gain, internally frequency com pensated which were designed specifically to operate from a single power supply
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LM158
LM258
LM358
LM2904
LM258
LM358
1H0M90N
LM2904F
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100C
Abstract: 120C 7MBR20SA060D-01 7MBR20SA060 aos Manufacturing date code
Text: the e x p re ss wrltien way w h atsoe ve r co n se n t is the p ro p e rty of w it h o u t Co. L td. p u rp o se s for the use of a n y re p ro d u c e d , c o p i e d of Fuji Electric for the m a n u fa c t u rin g in any or disclosed p a n y .n o r used
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7MBR20SA060D-01
H04-004-05
H04-004-03
100C
120C
7MBR20SA060D-01
7MBR20SA060
aos Manufacturing date code
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100C
Abstract: 7MBR50SB060-01 H04-004 LA1-12V
Text: the ihe express w ritte n ihirt party nor used pro pei ly w it h o u t Co . L td . p u rp o se s c o n s e n t of Fuji Electric for the m a n u fa c tu rin g of of a n y re p ro d u c e d . c o p ie d hei uin is ihe w<iy w h a ts o e v e r lor the use shall be neither
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7MBR50SB060-01
H04-004-05
H04-004-03
100C
7MBR50SB060-01
H04-004
LA1-12V
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7MBR50SA060
Abstract: 100C 7MBR50SA060-01 FUJI DATE CODE
Text: H04-004-05 î lu i the ar i¡i¿ t-! i'-.od e x p re s s in rtny w r itte n h i1(«in io n s e n t v v lc ^ ls o t'v e i is ihe p r o p e r ty of itie ose Co. S u i p u rp o s e s for w ith o u t of ;in y aï pro due ed. c o p ie d of Fuji E le c iiii: ihe m a r u ifa c n ir in c j
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7MBR50SA060-01
H04-004-05
A060-01
H04-004-03
H04-004-03
7MBR50SA060
100C
7MBR50SA060-01
FUJI DATE CODE
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