BAS40L
Abstract: marking code s6 SOD-882L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS40L
OD882
MDB391
SCA75
613514/01/pp8
BAS40L
marking code s6
SOD-882L
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SSR -100 DD
Abstract: SSR -25 DD SSR -60 DD IGBT SSR ac ssr SSR -40 DD SSR G THYRISTOR H 1500 three phase motor h brige reversing ssr
Text: Type Designation Solid State Relay Thyristor/Diode SMTC1-1500F-16-LGD12 SM - Sempo trademark T - thyristor-thyristor module; D - diode-diode module; A - semiconductors A series; C - semiconductors C series; - group of repetitive peak off-state and reverse voltage:
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SMTC1-1500F-16-LGD12
00-1600V;
600-2200V;
400-3600V;
200-5000V;
000-6500V;
000-8500V;
SMTC1-1500F-Stud
SMPD-100S-12-M21
SMDS-100H-18-M30
SSR -100 DD
SSR -25 DD
SSR -60 DD
IGBT SSR
ac ssr
SSR -40 DD
SSR G
THYRISTOR H 1500
three phase motor h brige
reversing ssr
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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5M MARKING CODE SCHOTTKY DIODE
Abstract: S6 marking code onsemi Diode NTGF3123P mosfet 23 Tsop-6 mosfet tsop-6 23 NTGF3123PT1G
Text: NTGF3123P Power MOSFET and Schottky Diode 20 V, 2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Dual http://onsemi.com Features • • • • • • FETKY P−Channel and Schottky Diode Small Size 3 x 3 mm Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance
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NTGF3123P
NTGF3123P/D
5M MARKING CODE SCHOTTKY DIODE
S6 marking code onsemi Diode
NTGF3123P
mosfet 23 Tsop-6
mosfet tsop-6 23
NTGF3123PT1G
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD600S17K3_B2 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ $ 1 # % 7 28 6( 1 $ ,-. / ,
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DD600S17K3
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smd schottky diode s6
Abstract: smd schottky diode s6 33 smd diode S6 41 smd schottky diode marking s6 smd schottky diode s6 ca Diode smd s6 68 Diode smd s6 95 smd diode S6 1PS76SB62 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 1PS76SB62 Schottky barrier diode Product specification 2001 Feb 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB62 FEATURES PINNING • Ultra high switching speed PIN DESCRIPTION
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M3D049
1PS76SB62
MGU328
OD323
SC-76)
613514/01/pp8
smd schottky diode s6
smd schottky diode s6 33
smd diode S6 41
smd schottky diode marking s6
smd schottky diode s6 ca
Diode smd s6 68
Diode smd s6 95
smd diode S6
1PS76SB62
BP317
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smd schottky diode s6
Abstract: smd schottky diode marking s6 smd schottky diode s6 16 marking code s6 diode smd marking code 76
Text: DISCRETE SEMICONDUCTORS DATA SHEET 1PS76SB62 Schottky barrier diode Product specification Supersedes data of 2001 Feb 16 2004 Jan 26 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB62 FEATURES PINNING • Ultra high switching speed
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1PS76SB62
1PS76SB62
OD323
SC-76)
SCA76
R76/02/pp7
smd schottky diode s6
smd schottky diode marking s6
smd schottky diode s6 16
marking code s6
diode smd marking code 76
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S677
Abstract: No abstract text available
Text: SKNa 22 Stud Diode Avalanche Diode SKNa 22 8NO2P:1 ?M2B@ R S7 $ N:&=1:5: %&'5+ I3/ 3(,1(5350 3.+/&,13(P D:&= 2:1( 8 ¥C77 S777 ST77 S677 SC77 SW77 ?M$8 R T6 $ N01(U VW7X >) R V7S YDP @FG& TT]¥C @FG& TT]S7 @FG& TT]ST @FG& TT]S6 @FG& TT]SC @FG& TT]SW ZM [
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TDA8808
Abstract: TDA8808AT TDA8808T TDA8808T/C3
Text: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players
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TDA8808T
TDA8808AT
TDA8808
TDA8808AT
TDA8808T
TDA8808T/C3
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PDF PIN PHOTO DIODE DESCRIPTION
Abstract: tda8808 TDA8808AT TDA8808T GCLF PHOTO diode
Text: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players
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TDA8808T
TDA8808AT
TDA8808
PDF PIN PHOTO DIODE DESCRIPTION
TDA8808AT
TDA8808T
GCLF
PHOTO diode
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S6 diode
Abstract: diode S6 SCHOTTKY DIODE SOT-143 Q62702-A0043
Text: Silicon Crossover Ring Quad Schottky Diode ● BAT 15-099R Low barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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15-099R
15-099R
Q62702-A0043
OT-143
S6 diode
diode S6
SCHOTTKY DIODE SOT-143
Q62702-A0043
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Untitled
Abstract: No abstract text available
Text: SKN 3F20 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 3F20 SKR 3F20 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>- @$A BC +( 57DE6 3FG
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573FG
563FG
S577U
75l5I
bA67ED
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FMMD6050
Abstract: FMMD914 BAW* diode BAL99 BAR99 BAV70 BAV74 BAV99 ZC830A ZC831A
Text: SOT 23 TRANSISTORS & DIODES SELECTIO N GUIDE SILICO N P LA N A R HIGH SP EED SW ITCH IN G D IO D ES Rat ings Description Type B A S 16 FMMD914 HD3A BA L99 BA R99 FMMD6050 BAV70 BAV74 HD2A BAV99 BA W S6 HD4A Single diode Single diode Single diode Single diode
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FMMD914
BAL99
BAR99
FMMD6050
BAV70
BAV74
BAV99
C9/C20
50MHz
ZC830A
BAW* diode
ZC831A
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silicon general 16 pin ceramic dip J
Abstract: No abstract text available
Text: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight
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SG6100/SG6101
100mA
SG6100
SG6101
16-PIN
SG6101J
14-PIN
SG6100F
silicon general 16 pin ceramic dip J
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S60SC
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm OUTLINE Package : MTO-3P S60SC6M Unit-mm Weight 6.1g Typ 60V 60A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • * i « S • Small 9 jc • High lo Rating i @ Rating Main Use
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S60SC6M
S60SC
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S60SC4MT
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode • fttg H Package S60SC4MT ' n^hkiVXW 40V 60A OUTLINE MTO-3PT Unit; mm Weight 5.2k Typ) - Feature • T j= 1 50 TC Tj=150°C • 9 jc lf t lt ô U Small 8 jc High lo Rating Main Use Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation
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S60SC4MT
CJ533-1
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S60HC3
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm S60HC3 OUTLINE 30V 60A Feature • Tj=125°C • fiVF=0.40V • * i« S • Tj=125°C • Low V f=0.40V • Sm all B jc • High lo Rating i Main Use • 7 ïS - it * S D f f i; iîB S ± • Reverse current protection
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S60HC3
15VItp
S60HC3
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode W tm S60SC4M 40V OUTLINE A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • * i « S • Small B jc • High lo Rating i Rating Main Use • Switching Regulator • DC/DC Z iy iK —S
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S60SC4M
waveii50Hz
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Untitled
Abstract: No abstract text available
Text: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code
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0D0316T
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S60SC4MT
Abstract: S60SC4M 60SC4MT,S60SC4MT
Text: Schottky Barrier Diode Twin Diode OUTLINE S60SC4MT Unit : mm Weight 52g Typ Package I MTO-3PT o v h ü 'X H ) 40V 60A Feature • Tj=150°C • T j= i5 (rc 'sondo S60SC4MT • P rrsm Rating • P r r s m P K t? • Small 8 jc • High lo Rating • 9 jCÖtyJvSU'
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S60SC4MT
15ffC
CJ533-1
S60SC4MT
S60SC4M
60SC4MT,S60SC4MT
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DZ10V
Abstract: DIODE 3FV 60 M40-900 z12v bo 8p 4f diode yz 140 zener
Text: SEM ICONDUCTOR KDZ3.6FV-KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. C ATHOD E MARK FEATURES • Small Package : TFSC • Nominal Voltage Tolerance About ± 6 % .
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6FV-KDZ36FV
Z22VV
Z24VV
DZ27VV
Z12VV
KDZ36
20x20m
DZ10V
DIODE 3FV 60
M40-900
z12v
bo 8p 4f
diode yz 140 zener
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 15-099R • Low barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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15-099R
Q62702-A0043
15-099R
EHA07012
OT-143
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aa 118 diode
Abstract: 05nm5
Text: 2 / a y h + y j y a - K U 7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC6M Unit • mm Package I MTO-3P -, ^+0.5 lo-o.i 4>33±0-2 n-^bgÖT? #i| Date code 60V 60A • V aa%j Type No. » Polarity • T jl5 0 ° C • Prrsm 77 5.0 ±0-3
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S60SC6M
J515-5
aa 118 diode
05nm5
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marking KSV 5V
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm S60SC3ML OUTLINE 30V 60A Feature • Tj=150°C • Tj=150°C • fiV F = 0 .4 8 V • Low V f=0.48V • P r r s m Rating Main Use • Switching Regulator • DC/DC Z\yjK-S • DC/DC Converter • mm.<f-a.oaüîh • Home Appliance, Game, Office Autom ation
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S60SC3ML
i50Hz
marking KSV 5V
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