S10045
Abstract: violet laser diode chip
Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its
|
Original
|
PDF
|
S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
S10045
violet laser diode chip
|
Untitled
Abstract: No abstract text available
Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its
|
Original
|
PDF
|
S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
|
S10045
Abstract: No abstract text available
Text: PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times
|
Original
|
PDF
|
S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E02
S10045
|
Untitled
Abstract: No abstract text available
Text: Patent Pending PHOTODIODE Si PIN Photodiode S10044 For monitoring high-power laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power semiconductor laser diode. Its active area has a specially processed surface structure that maintains good photocurrent linearity up to an incident light level 10 times higher than that
|
Original
|
PDF
|
S10044
S10044
S5106)
S10045)
SE-171
KPIN1076E01
|
S5104
Abstract: s510 datasheet S510 SK52 SK53 SK54 SK55 SK56 SK58 s510 marking
Text: SK52 – S510 WTE POWER SEMICONDUCTORS Pb 5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak For Use in Low Voltage Application
|
Original
|
PDF
|
SMC/DO-214AB
SMC/DO-214AB,
MIL-STD-750,
S5104
s510 datasheet
S510
SK52
SK53
SK54
SK55
SK56
SK58
s510 marking
|
Untitled
Abstract: No abstract text available
Text: SK52 – S510 5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 125A Peak
|
Original
|
PDF
|
SMC/DO-214AB
SMC/DO-214AB,
MIL-STD-750,
|
Untitled
Abstract: No abstract text available
Text: SK52 – S510 WTE POWER SEMICONDUCTORS Pb 5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak For Use in Low Voltage Application
|
Original
|
PDF
|
SMC/DO-214AB
SMC/DO-214AB,
|
Untitled
Abstract: No abstract text available
Text: 1SS404 Silicon Epitaxial Planar Diode SOD-323 Features Small surface mounting type. High speed. High reliability with high surge current handing capability Applications High speed switching Dimensions in inches and millimeters Ordering Information
|
Original
|
PDF
|
1SS404
OD-323
1SS404
300mA
|
Untitled
Abstract: No abstract text available
Text: M-808-CS-025W -950 Description: 808nm, high brightness, high reliability, multimode laser diode with 25 W output from 1000um aperture. Fiber coupled modules are available soon. Applications: Pumping source, medical, commercial printing, free space communication, material processing,
|
Original
|
PDF
|
M-808-CS-025W
808nm,
1000um
808-cs-025w-950
|
DIODE S51
Abstract: SOD323 Package footprint 1SS404 MARKING TA SOD323 DIODE marking A SOD323 h 027
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1SS404 FEATURES Pb z Small surface mounting type. z High speed. z High reliability with high surge current handing capability Lead-free APPLICATIONS z SOD-323 High speed switching
|
Original
|
PDF
|
1SS404
OD-323
BL/SSSDB007
DIODE S51
SOD323 Package footprint
1SS404
MARKING TA SOD323 DIODE
marking A SOD323
h 027
|
5070d
Abstract: S-5031C S-5031A1 S-5071A1 5131A 5130c side 5150c rotary coded switch 16 positions resistor 3.3k S-5010C
Text: Model S-5000 Dip Rotary Code Switch W/ Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range Storage Temp. Range Sealing Method Electrical Contact Rating Non-Switching Switching Contact Resistance Insulation Resistance
|
Original
|
PDF
|
S-5000
S-5010A~
S-5030A~
S-5011A~
S-5031A~
S-5110A~
S-5130A~
S-5111A~
S-5131A~
5070d
S-5031C
S-5031A1
S-5071A1
5131A
5130c
side 5150c
rotary coded switch 16 positions
resistor 3.3k
S-5010C
|
Untitled
Abstract: No abstract text available
Text: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A) • TrenchFET Power MOSFETS: 1.8–V Rated 0.048 @ VGS = –4.5 V –6.3 • Ultra–Low Thermal Resistance, PowerPAK®
|
Original
|
PDF
|
Si7705DN
07-mm
Si7705DN-T1
S-51210
27-Jun-05
|
Si7705DN
Abstract: No abstract text available
Text: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A) • TrenchFET Power MOSFETS: 1.8–V Rated 0.048 @ VGS = –4.5 V –6.3 • Ultra–Low Thermal Resistance, PowerPAK®
|
Original
|
PDF
|
Si7705DN
07-mm
Si7705DN-T1
08-Apr-05
|
Untitled
Abstract: No abstract text available
Text: 1SS404 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Turn-On Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
|
Original
|
PDF
|
1SS404
OD-323
OD-323,
MIL-STD-202,
|
|
|
Si7705DN
Abstract: Si7705DN-T1
Text: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A) • TrenchFET Power MOSFETS: 1.8–V Rated 0.048 at VGS = – 4.5 V – 6.3 • Ultra–Low Thermal Resistance, PowerPAK®
|
Original
|
PDF
|
Si7705DN
07-mm
S-51210
27-Jun-05
Si7705DN-T1
|
si4812b
Abstract: Si4812BDY
Text: SPICE Device Model Si4812BDY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4812BDY
18-Jul-08
si4812b
|
Si4736DY
Abstract: No abstract text available
Text: SPICE Device Model Si4736DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4736DY
18-Jul-08
|
Si4832DY
Abstract: No abstract text available
Text: SPICE Device Model Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4832DY
18-Jul-08
|
73373
Abstract: ic 73373
Text: SiP41108 New Product Vishay Siliconix Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay FEATURES D D D D D D D D D APPLICATIONS 8-V or 12-V Low-Side Gate Drive Undervoltage Lockout Internal Bootstrap Diode
|
Original
|
PDF
|
SiP41108
S-51104--Rev.
13-Jun-05
73373
ic 73373
|
Si4832DY
Abstract: No abstract text available
Text: SPICE Device Model Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4832DY
00A/s
S-51888Rev.
12-Sep-05
|
Si4736DY
Abstract: No abstract text available
Text: SPICE Device Model Si4736DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4736DY
S-51870Rev.
12-Sep-05
|
SiP41108
Abstract: TSSOP-16
Text: SiP41108 New Product Vishay Siliconix Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay FEATURES D D D D D D D D D APPLICATIONS 8-V or 12-V Low-Side Gate Drive Undervoltage Lockout Internal Bootstrap Diode
|
Original
|
PDF
|
SiP41108
08-Apr-05
TSSOP-16
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
PDF
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
DIODE S5
Abstract: s501 diode
Text: Model S-5000 Dip Rotary Code Switch W / Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range : -25°C T O +75°C Storage Temp. Range : -25°C T O +75°C Sealing Method : O Ring Sealed Electrical Contact Rating Non-Switching
|
OCR Scan
|
PDF
|
S-5000
S-5110A~
-5I30A
S-513
S-5050A-
S-5070A-
S-505IA-
S-507IA-
S-5150A-
DIODE S5
s501 diode
|
