S450GA
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600
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S450GA
S450GA
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S452GA
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600
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S452GA
S452GA
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S451GA
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600
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S451GA
S451GA
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DIODE S45
Abstract: BAS40ADW BAS40CDW BAS40SDW BAS40TW SC70-6L DIODE S43 S44 MARKING marking s43 marking S45
Text: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA
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BAS40TW/ADW/CDW/SDW/RDW
OT-363
SC70-6L)
BAS40TW
BAS40ADW
BAS40CDW
BAS40xxx
T/R13
DIODE S45
BAS40ADW
BAS40CDW
BAS40SDW
BAS40TW
SC70-6L
DIODE S43
S44 MARKING
marking s43
marking S45
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S45 marking
Abstract: marking S45 DIODE S45 MARKING CODE R7 marking code S44 BAS40SDW BAS40RDW MARKING CODE R7 DIODE marking ADW BAS40CDW
Text: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA
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BAS40TW/ADW/CDW/SDW/RDW
OT-363
SC70-6L)
2002/95/EC
BAS40TW
BAS40ADW
BAS40xxx
T/R13
S45 marking
marking S45
DIODE S45
MARKING CODE R7
marking code S44
BAS40SDW
BAS40RDW
MARKING CODE R7 DIODE
marking ADW
BAS40CDW
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S43 MARKING
Abstract: S44 MARKING marking S45
Text: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA
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BAS40TW/ADW/CDW/SDW/RDW
OT-363
SC70-6L)
2002/95/EC
BAS40TW
BAS40ADW
BAS40CDW
BAS40SDW
BAS40RDW
BAS40xxx
S43 MARKING
S44 MARKING
marking S45
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S455DC
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) Vf Ir Max @PIV 25deg C (uAmps) Ir Max @PIV 100deg C (uAmps) theta JC (deg C/W) trr (ns)
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S455DC
S455DC
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S455IE
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) Vf Ir Max @PIV 25deg C (uAmps) Ir Max @PIV 100deg C (uAmps) theta JC (deg C/W) trr (ns)
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S455IE
S455IE
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S455FC
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) Vf Ir Max @PIV 25deg C (uAmps) Ir Max @PIV 100deg C (uAmps) theta JC (deg C/W) trr (ns)
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S455FC
S455FC
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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S455DA
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) Vf Ir Max @PIV 25deg C (uAmps) Ir Max @PIV 100deg C (uAmps) theta JC (deg C/W) trr (ns)
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S455DA
S455DA
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S455GA
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) Vf Ir Max @PIV 25deg C (uAmps) Ir Max @PIV 100deg C (uAmps) theta JC (deg C/W) trr (ns)
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S455GA
S455GA
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SMD zener 562
Abstract: S102T current regulative diode T 5 Z 27-2.e S501T S-501T S-123T s-562t 562T CRD Diode crd e102
Text: CURRENT REGULATIVE DIODE CRD CRD is a diode which supplies constant current to an electric circuit, even when power supply voltage fluctuations or load impedance fluctuations occur. CRD is used for current stabilization and current limiting. Part number z1 1J 2
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E-102
E-152
E-202
E-272
240kfi
120kfi
E-352
E-452
E-562
SMD zener 562
S102T current regulative diode
T 5 Z 27-2.e
S501T
S-501T
S-123T
s-562t
562T
CRD Diode
crd e102
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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554S2
4fl55452
10ohm
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BA 885 • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 M Hz. 2 GHz • Especially useful as antenna switch in TV-sat tuners ' Type Marking Ordering Code tape and reel BA 885
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Q62702-A608
OT-23
EHA07002
z/100
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2sa 102 transistor
Abstract: No abstract text available
Text: International S Rectifier HEXFRED P D -2 .3 7 9 Provisional Data Sheet HFA35HB60 ULTRA FAST, SOFT RECOVERY DIODE 600V, 22A Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units Vbr 600 V lF AV 22 A trr 75
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HFA35HB60
00A//IS,
00A/pS,
O-254AA
4fl55455
2sa 102 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Tuning Diode BB833 1 Features • Extented frequency range up to 2.5 GHz; special design for use in T V -S A T indoor units • High capacitance ratio 2 ^ -. 1 VPS05176 Type B B 833 Ordering Code tape and reel 1 Q62702-B628 C Pin Configuration
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BB833
VPS05176
Q62702-B628
OD-323
023Sb05
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Diode BAW 62
Abstract: oszillograf 7x7x1 DIODE S45 Q68000-A1185-F1 99A7 01JE Diode BAW 99 500F2
Text: Silizium-Planar-Doppeldiode BAV99 Die epitaktische Silizium-Planar-Doppeldiode B A V 99 bestehend aus zwei in Reihe geschal teten Einzeldioden. Die Diode im Kunststoffgehäuse 23 A3 DIN 41 869 S O T -2 3 , findet Anwendung als schneller Schalter speziell für Dünn- und Dickfilmschaltungen. Der Typ
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OT-23)
Q68000-A1185-F1
01min
450KlW
Diode BAW 62
oszillograf
7x7x1
DIODE S45
Q68000-A1185-F1
99A7
01JE
Diode BAW 99
500F2
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Untitled
Abstract: No abstract text available
Text: □IXYS MD0 500 High Power Diode Module V RRM FRMS FAVM =1200-2200 V = 880 A = 560 A Preliminary Data V RRM V RSM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol Test Conditions ^FRMS ^FAVM "^"vj ^FSM TVJ= 45°C VR= 0 l2t Type 3 o MDO
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500-12N1
500-14N1
500-16N1
500-18N1
500-20N1
500-22N1
GGG350Ã
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Untitled
Abstract: No abstract text available
Text: b3E • 0015G 1S M IT S U B IS H I STS ■ M I T 3 MITSUBISHI BIPOLAR DIGITAL ICs M54534P CDGTL L 0 6 I C 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE DESCRIPTION PIN CONFIGURATION TOP VIEW) The M54534P, 6-channel sink driver, consists of 12 NPN tran
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0015G
M54534P
320mA
M54534P,
320mA
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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PDF
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GFE 88 DIODE
Abstract: No abstract text available
Text: SIEMENS BSS 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode 1 , • Logic Level 1 ' ^GS th = 0.8.2.0V ¿ 3 ^ VPT05I58 Pin 1 Type BSS 88 VDS 240 V b 0.25 A Type BSS 88 BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S454 Q62702-S287 Q62702-SS03
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T05I58
Q62702-S454
Q62702-S287
Q62702-SS03
Q62702-S576
E6288
E6296
E6325
Sem80
GFE 88 DIODE
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PDF
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transistor Siemens sS 92
Abstract: siemens ss92 ss92 SS 92 siemens E-6325 transistor sS92 SS-92 BSS92
Text: SIEMENS BSS 92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode 2 . • Logic Level i * ^GS th = -0.8.-2.0 V ^ 3 VPT05158 Pin 1 Type BSS 92 Vds -240 V Type BSS 92 BSS 92 BSS 92 BSS 92 Ordering Code Q62702-S458 Q62702-S497 Q62702-S633
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Q62702-S458
Q62702-S497
Q62702-S633
Q62702-S502
E6288
E6296
E6325
transistor Siemens sS 92
siemens ss92
ss92
SS 92 siemens
E-6325
transistor sS92
SS-92
BSS92
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SS89 transistor
Abstract: SS89 siemens BS 240 siemens SS89 ss89 to-92 BSS89 BSS 89
Text: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Is • Logic Level • ^ G S th 1 ^ 3 ^ = 0.8.2.0V VPT05158 Pin 1 Pin 2 G Type BSS 89 ^bs 240 V Type BSS 89 BSS 89 BSS 89 BSS 89 Ordering Code Q62702-S455 Q62702-S519
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VPT05158
Q62702-S455
Q62702-S519
Q62702-S619
Q62702-S385
E6288
E6296
E6325
SS89 transistor
SS89 siemens
BS 240 siemens
SS89
ss89 to-92
BSS89
BSS 89
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