Untitled
Abstract: No abstract text available
Text: SINGLE-POLE, FOUR-THROW SWITCHES The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
/-12V
-2-12-RC"
MIL-C-22750
26GHz
S4-1209
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SPD31N05
Abstract: SPU31N05 P-TO252
Text: SPD31N05 SPU31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD31N05 55 V 31 A 0.04 Ω P-TO252 Q67040 - S4121 - A2
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SPD31N05
SPU31N05
P-TO252
Q67040
S4121
P-TO251
S4113
SPD31N05
SPU31N05
P-TO252
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P-TO252
Abstract: SPD14N05 SPU14N05 S4123
Text: SPD14N05 SPU14N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD14N05 55 V 13.5 A 0.1 Ω P-TO252 Q67040 - S4123 - A2
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SPD14N05
SPU14N05
P-TO252
Q67040
S4123
P-TO251
S4115
P-TO252
SPD14N05
SPU14N05
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SPD13N05L
Abstract: S4116 P-TO252 SPU13N05L
Text: SPD13N05L SPU13N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD13N05L 55 V 12.5 A
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SPD13N05L
SPU13N05L
P-TO252
Q67040
S4124
P-TO251
S4116
SPD13N05L
P-TO252
SPU13N05L
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P-TO252
Abstract: SPD28N05L SPU28N05L
Text: SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD28N05L 55 V 28 A 0.05 Ω
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SPD28N05L
SPU28N05L
P-TO252
Q67040
S4122
P-TO251
S4114
P-TO252
SPD28N05L
SPU28N05L
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SUD50P04-13L-E3
Abstract: SUD50P04-13L 73009
Text: SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature PRODUCT SUMMARY VDS (V) −40 40 rDS(on) (W) ID (A) 0.013 @ VGS = −10 V −60c 0.022 @ VGS = −4.5 V −48
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SUD50P04-13L
O-252
SUD50P04-13L--E3
S-41267--Rev.
05-Jul-04
SUD50P04-13L-E3
SUD50P04-13L
73009
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SUR50N024-09P
Abstract: No abstract text available
Text: SUR50N024-09P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24c ID D D D D (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET
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SUR50N024-09P
O-252
SUR50N024-09P--E3
SUR50N024-09P-T4--E3
S-41265--Rev.
05-Jul-04
SUR50N024-09P
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SUR50N024-06P
Abstract: No abstract text available
Text: SUR50N024-06P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID D D D D (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET
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SUR50N024-06P
O-252
SUR50N024-06P--E3
SUR50N024-06P-T4--E3
Lim75
S-41265--Rev.
05-Jul-04
SUR50N024-06P
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SUR50N024-09P
Abstract: VISHAY 34D
Text: SUR50N024-09P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24c ID D D D D (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET
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SUR50N024-09P
O-252
SUR50N024-09P--E3
SUR50N024-09P-T4--E3
08-Apr-05
SUR50N024-09P
VISHAY 34D
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SUD50P04-13L-E3
Abstract: 13L diode
Text: SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature PRODUCT SUMMARY VDS (V) −40 40 rDS(on) (W) ID (A) 0.013 @ VGS = −10 V −60c 0.022 @ VGS = −4.5 V −48
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SUD50P04-13L
O-252
SUD50P04-13L--E3
08-Apr-05
SUD50P04-13L-E3
13L diode
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SUR50N024-09P
Abstract: No abstract text available
Text: SUR50N024-09P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24c ID D D D D (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET
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SUR50N024-09P
O-252
SUR50N024-09P--E3
SUR50N024-09P-T4--E3
18-Jul-08
SUR50N024-09P
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SUR50N024-06P
Abstract: No abstract text available
Text: SUR50N024-06P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID D D D D (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET
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SUR50N024-06P
O-252
SUR50N024-06P--E3
SUR50N024-06P-T4--E3
18-Jul-08
SUR50N024-06P
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Untitled
Abstract: No abstract text available
Text: SUR50N024-06P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID D D D D (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET
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SUR50N024-06P
O-252
SUR50N024-06P--E3
SUR50N024-06P-T4--E3
08-Apr-05
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Si2328DS
Abstract: A96V
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)
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Si2328DS
O-236
OT-23)
Si2328DS-T1
Si2328DS-T1--E3
S-41259--Rev.
05-Jul-04
A96V
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A96V
Abstract: SI2328DS-T1-E3 Si2328DS
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)
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Si2328DS
O-236
OT-23)
Si2328DS-T1
Si2328DS-T1--E3
08-Apr-05
A96V
SI2328DS-T1-E3
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A96V
Abstract: si2328ds-t1 SI2328ds rev Si2328DS D8 marking
Text: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)
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Si2328DS
O-236
OT-23)
Si2328DS-T1
Si2328DS-T1--E3
18-Jul-08
A96V
SI2328ds rev
D8 marking
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SI6467BDQ-T1-E3
Abstract: No abstract text available
Text: Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.0125 @ VGS = −4.5 V −8.0 0.0155 @ VGS = −2.5 V −7.0 0.020 @ VGS = −1.8 V −6.0 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6467BDQ G 8 D 7 S * Source Pins 2, 3, 6 and 7
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Si6467BDQ
Si6467BDQ-T1
Si6467BDQ-T1--E3
08-Apr-05
SI6467BDQ-T1-E3
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st 6062
Abstract: st1-16v
Text: Technical data sheet • Relay Module Subject to technical modification 762120 Identification Use/Area of application Description Input Nominal voltage UN Voltage range Rated current at UN Status Indication Rated insulation voltage Input voltage Interrupting voltage
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EN50155/61373
st 6062
st1-16v
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SUB85N04-04
Abstract: SUP85N04-04
Text: SUP/SUB85N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.004 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S Top View Ordering Information SUP85N04-04 SUP85N04-04—E3 (Lead (Pb)-Free)
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SUP/SUB85N04-04
O-220AB
O-263
SUP85N04-04
SUP85N04-04--E3
SUB85N04-04
SUB85N04-04--E3
O-220AB
S-41261--Rev.
05-Jul-04
SUB85N04-04
SUP85N04-04
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Si7370DP
Abstract: Si7370DP-T1
Text: Si7370DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 15.8 0.013 @ VGS = 6 V 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
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Si7370DP
07-mm
Si7370DP-T1
Si7370DP-T1--E3
S-41262--Rev.
05-Jul-04
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SPD31N05
Abstract: No abstract text available
Text: SIEMENS SPD31N05 SPU31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS h RDS on Package Ordering Code SPD31N05 55 V 31 A 0.04 f ì P-T0252
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OCR Scan
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SPD31N05
SPU31N05
P-T0252
P-T0251
Q67040
S4121
Q67040-S411
30/Jan/1998
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spd14n05
Abstract: No abstract text available
Text: SIEMENS SPD14N05 SPU14N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS k> ROS on Package Ordering Code SPD14N05 55 V 13.5 A 0.1 Q P-T0252
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OCR Scan
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SPD14N05
SPU14N05
P-T0252
P-T0251
Q67040
S4123
S4115
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PDF
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004II
Abstract: No abstract text available
Text: SIEMENS SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/di rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type V|ds ¡0 R DS on Package Ordering Code SPD28N05L 55 V
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OCR Scan
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SPD28N05L
SPU28N05L
P-T0252
P-T0251
Q67040
S4122
S4114
004II
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df52
Abstract: No abstract text available
Text: SIEMENS SFD13N05L SPU13N05L SIPMOS Power T ransistor • N channel • Enhancement mode • Logic Level • Avalanche-rated •d i//d f rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type Vds b ^DS on Package O rdering Code SPD13N05L 55 V
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OCR Scan
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SFD13N05L
SPU13N05L
SPD13N05L
P-T0252
P-T0251
Q67040
S4124
S4116
df52
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