sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJFV0SG00
uPD3599
transistor nec 2SK2396
MOS FET BUZ 444
MC-7643
nec 3S4M
4305 regulator nec
RD2.4S equivalent
2SC4305 NEC
2sA1441 nec
NPN transistor SST 117
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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s34 diode
Abstract: UV diode 320 nm s34 power diode 1480 nm laser diode UV diode 280 nm UV diode 100 nm to 280 nm UV laser diode 280 nm 220-1030 DIODE S34 UV diode 250 nm
Text: OPTICAL COMMUNICATIONS Up to 450mW Fiber Bragg Grating Stabilized 14xx nm Pump Modules S34 Series Key Features • Up to 450 mW 1420 and 1452 nm • Up to 430 mW (1480 nm) • Up to 360 mW (1420 to 1465 nm) • Up to 340 mW (1466 to 1495 nm) • Up to 320 mW (1496 to 1510 nm)
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450mW
GR-468-CORE
498-JDSU
1452NGER
5378-JDSU
S34PUMP
s34 diode
UV diode 320 nm
s34 power diode
1480 nm laser diode
UV diode 280 nm
UV diode 100 nm to 280 nm
UV laser diode 280 nm
220-1030
DIODE S34
UV diode 250 nm
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Untitled
Abstract: No abstract text available
Text: Fiber Optics High Power BIDI Bi-Directional Optical Component 1310 nm Tx / 1550 nm Rx with 1.25 Gbit/s, 5 V TIA V23875-S3433-x200 Preliminary Data The V23875-S3433-x200 is a bi-directional optical component designed for full-duplex communication over a single fiber. The single fiber concept saves
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V23875-S3433-x200
V23875-S3433-x200
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Untitled
Abstract: No abstract text available
Text: CS340602 CS341202_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 F S S t R e C O V B ty S in g le Diode Modules 20 Amperes/600-1200 Volts Description: CS340602, CS341202 Fast Recovery Single Diode Modules 20 Amperes/600-1200 Volts
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CS340602
CS341202_
Amperes/600-1200
CS340602,
CS341202
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ERG27-10
Abstract: B2-18 ERG27 ERG77 ERG77-10 T151 T930
Text: ERG27*ERG77 3 oa •1000V *±'*7-^*-K • ■ O utline D raw in g s FAST RECOVERY DIODE • Features • i'a 's ’?-"/'? • Glass passivated chip High voltage • Stud mounted : Applications • Switching power supplies • M 7 fJ —fr'fJU Free-wheel diode
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ERG27
ERG27-10,
ERG77-10
50HziE&
ftl80\
I95t/R89)
ERG27-10
B2-18
ERG77
ERG77-10
T151
T930
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TU810
Abstract: No abstract text available
Text: 2DI100Z-1200OOA S ± /< 9 — l £ y< 7— f '• Outline Drawings POWER TRANSI STOR MODULE : Features • iS W /± High Voltage • 7 U — ¡¡i'f ij > 9 ¥ ■i • ASO Including Free W heeling Diode Excellent • Sfti&ffi Safe Operating Area Insulated Type
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2DI100Z-1200OOA)
l95t/R
TU810
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Untitled
Abstract: No abstract text available
Text: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1
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MCC44
MCD44
MCC44-06Ã
MCC44-08Ã
MCC44-12io1
14lo1
MCC44-18io1
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A-254168-2
Abstract: VOLTAGE REGULATOR IC LM SERIES lm 2490 VR9F Arnold A-254168-2 core with 60 turns LM336H-2.5 LM136-2.5
Text: SñE J> bSDllEH DD7441Ô 177 « N S C 2 National oí Semiconductor LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode General Description The LM136-2.5/LM236-2.5 and LM336-2.5 integrated cir cuits are precision 2.5V shunt regulator diodes. These monolithic IC voltage references operate as a low-tempera
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DD7441Ô
5/LM236-2
LM336-2
LM136-2
5/LM336-2
A-254168-2
VOLTAGE REGULATOR IC LM SERIES
lm 2490
VR9F
Arnold A-254168-2 core with 60 turns
LM336H-2.5
LM136-2.5
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DIODE MOTOROLA B34
Abstract: DIODE MOTOROLA B33 diode schottky B34 1S91
Text: Order this data shwrt by MBRS320T3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS320T3 MBRS330T3 MBRS340T3 Su rface M o u n t Sc h o ttk y Pow er Rectifiers . em ploying the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and
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MBRS320T3/D
86036EUROPE:
MSRS320T3/0
DIODE MOTOROLA B34
DIODE MOTOROLA B33
diode schottky B34
1S91
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4233A
Abstract: 535x 184 324 DIODE 2N5383 2N3055C
Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8
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533XCD01
534XCD02
535XCQ01
2N1063
2N107Û
4233A
535x
184 324 DIODE
2N5383
2N3055C
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B2-18
Abstract: ERG27 ERG27-10 ERG77 ERG77-10 T151 T460 T810 m7 diode power
Text: ERG27'ERG77 3 oa •1000V *±'*7-*-f*-K a a a i a t y 'f ^ — : O u tlin e D r a w in g s k FAST RECOVERY DIODE : Features • Glass passivated chip • f f i itl± High voltage • X fv b 'lfc Stud mounted : Applications • Switching power supplies • ^a y / <—
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ERG27
ERG27-10,
ERG77-10
50HziE
I95t/R89)
B2-18
ERG27-10
ERG77
ERG77-10
T151
T460
T810
m7 diode power
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BTA 139
Abstract: 300w power supply ESAC39 Diode Equivalent 1N34A
Text: n±'\'«a*-* ESAC39 C, N , D (5a) • f t j f c ' + ï i : O u tline D raw ings FAST RECOVERY DIODE Features • z . 'f v i- w x e - w m ia z & i' S u p e r h ig h speed s w itc h in g . mwm&rn Lo w V f in tu rn on C o n n e ctio n D iagram H igh reliability
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ESAC39
O-220AB
SC-46
ESAC39-DDC
ESAC39-GGN
ESAC39-DnD
000L055
ES307TE
BTA 139
300w power supply
Diode Equivalent 1N34A
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DC1277
Abstract: DC1279F-T DC1276 DC1270 Gunn Diode e band DC1277G-T DC1278F DC1279C DC1279F 018ph diode
Text: 37bâ£22 DOlflS'îO TSD « P L S B Si GEC P L E S S E Y S E M I C O N D U C T O R S D S3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP Tha introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs
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S3420-1
DC1270/1220
DC1270/DC1220
37bflS25
100MW
DC1276T
DC1277
DC1278
DC1279
DC1279F-T
DC1276
DC1270
Gunn Diode e band
DC1277G-T
DC1278F
DC1279C
DC1279F
018ph diode
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ys935
Abstract: diodo 500v 10A mc 13500 po 72 diodo PD3162 1b70a 2 935 diodo 20S1 ys 180 103 dc SOAY
Text: I N T E R N A T I O N AL R E C T I F I E R IO R 73 dF J 4flSSMSE O D O V O b l 7 | Data Sheet No. PD-3.162 in t e r n a t io n a l r e c t if ie r S34BF & S34BFH SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 8/ys 935 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs
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S34BF
S34BFH
S34BF
S34BF4A.
200AC
ys935
diodo 500v 10A
mc 13500
po 72 diodo
PD3162
1b70a
2 935 diodo
20S1
ys 180 103 dc
SOAY
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diodo 740
Abstract: diodo 500v 10A T35W 100L FULL WAVE RECTIFIER and waveforms hockey stat sheet diodo 87 diodo rep S34BF
Text: INTERNATIONAL R E C T IF IE R _ ^ IO R | in te r n a tio n a l 73 4ÔSSMSS D DD 7 D4 3 S " J " " T - 'X - 5 ~ tcf Data Sheet No. PD-3.165 r e c tifie r S34BF S E R IE S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 740 AMP RMS, RING AMPLIFYING GATE INVERTER TY P E H O CKEY PUK S C R s
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S34BF
S34BF
1400Vf
S34BFI4A.
SS452
00G704Ã
O-200AC
diodo 740
diodo 500v 10A
T35W
100L
FULL WAVE RECTIFIER and waveforms
hockey stat sheet
diodo 87
diodo rep
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125CV
Abstract: No abstract text available
Text: IN TERNATIONAL RECTIFIER JO R 73 dF | 4ÔSSMS2 ODObT? "i | ~ r - 2 - W ? Data Sheet No. PD-3.152 i n t e r n a t i o n a l r e c t i f ie r S34DF SERIES 1200-1000 VOLTS RANGE STANDARD TURN-OFF TIME 16/ys 350 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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S34DF
16/ys
O--118)
1-12UNF-2A
T0-209AD
TD-108)
S34DF12A0.
O-118)
125CV
|
pg74
Abstract: No abstract text available
Text: “ INTERNATIONAL RECTIFIER IO R 73 D e | 4ÛSS4S2 QOGbT?! ñ | ' p —z . S - i f Data Sheet No. PD-3.153 in t e r n a t io n a l r e c t if ie r S34DF SERIES 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 370 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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S34DF
S34DF16A0.
I4055455
T0-209A
O-118)
pg74
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Untitled
Abstract: No abstract text available
Text: IN T E R N ATIONAL REC TIFIER IO R in t e r n a t io n a l ' D e | 4ÖSS452 □ OOb'ifl'ì 5 f 73 Data Sheet No. PD-3.150 r e c t if ie r S34DF & S34DFH SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 8 / j s 440 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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SS452
S34DF
S34DFH
S340F
S340FH
TD-209AE
1-12UNF-2A
TD-209AD
S34DGF4A0.
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Untitled
Abstract: No abstract text available
Text: & Semiconductor DS34LV87T Enhanced CMOS Quad Differential Line Driver General Description Features The D S34LV87T is a high speed quad differential C M OS d river that m eets the requirem ents of both TIA /E IA -422-B and ITU-T V.11. The C M O S D S34LV87T features low static
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DS34LV87T
TIA/EIA-422-B
16-Lead
DS34LV87TM
DS34LV87TN
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DS34LV86AT
Abstract: No abstract text available
Text: Semiconductor General Description Features The DS34LV87T is a high speed quad differential CM OS driver th a t m eets the requirem ents of both TIA /E IA -422-B and ITU-T V.11. The C M OS D S34LV87T features low static lc c of 100 pA m ax w hich makes it ideal fo r battery powered
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DS34LV87T
DS34LV87T
-422-B
S34LV87T
DS34LV86AT
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Untitled
Abstract: No abstract text available
Text: May 1998 General Description Features The D S34C 87T is a quad differential line d river designed fo r digital data transm ission over balanced lines. The D S34C 87T m eets all th e requirem ents of EIA standard RS-422 w hile retaining the low pow er ch aracteristics of
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DS34C87T
DS34C87T
RS-422
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Untitled
Abstract: No abstract text available
Text: m m am x KS221K15 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S Ín Q l& D d rU n Q tO H Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS221K15
Amperes/1000
75T4bai
i4b21
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