s118 diode
Abstract: S118 1SS118 diode s118 band switching diode 1S118 Hitachi DSA0040
Text: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 Z Rev. 0 Features • High average forward current. (I O = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1SS118 Black S118
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1SS118
ADE-208-297
200mA)
DO-35
s118 diode
S118
1SS118
diode s118
band switching diode
1S118
Hitachi DSA0040
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s118 diode
Abstract: s118 jedec do 35 1SS118 Hitachi DSA001653
Text: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 Z Rev. 0 Dec. 1994 Features • High average forward current. (IO = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1SS118
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1SS118
ADE-208-297
200mA)
DO-35
SC-48
s118 diode
s118
jedec do 35
1SS118
Hitachi DSA001653
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S118
Abstract: 1SS118 s118 diode Hitachi DSA00493
Text: ADE-208-297 Z 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching Rev. 0 Dec. 1994 Features Outline • High average forward current. (I o=200mA) • High reliability with glass seal. S1 18 1 Ordering Information Type No. Cathode band Mark Package Code
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ADE-208-297
1SS118
200mA)
Do-35
SC-48
S118
1SS118
s118 diode
Hitachi DSA00493
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ss 297 transistor
Abstract: Q67000-S118 Q67000-S292
Text: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118
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Q67000-S118
Q67000-S292
E6288
E6325
ss 297 transistor
Q67000-S118
Q67000-S292
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ss 297 transistor
Abstract: Q67000-S118 Q67000-S292
Text: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118
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Q67000-S118
Q67000-S292
E6288
E6325
ss 297 transistor
Q67000-S118
Q67000-S292
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Untitled
Abstract: No abstract text available
Text: User’s Manual µPD4992 8-bit Parallel I/O Calendar Clock Document No. S11812EJ4V0UM00 4th edition Date Published May 1998 N CP(K) Printed in Japan 1998 [MEMO] 2 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
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PD4992
S11812EJ4V0UM00
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IC-310
Abstract: CCD linear image sensor 22-pin scanner S124
Text: TCD2704D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2704D The TCD2704D is a high sensitive and low dark current 7500 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2704D
TCD2704D
IC-310
CCD linear image sensor 22-pin scanner
S124
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CCD linear image sensor 22-pin scanner
Abstract: S124
Text: TCD2561D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2561D The TCD2561D is a high sensitive and low dark current 5340 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2561D
TCD2561D
CCD linear image sensor 22-pin scanner
S124
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D147
Abstract: d122 D128 transistor datasheet Photodiode-Array 64-element DIODE D126 D128 D128 transistor IC D132 D133 D149 diode
Text: TCD2561D TOSHIBA CCD Linear Image Sensor CCD charge coupled device TCD2561D The TCD2561D is a high sensitive and low dark current 5340 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2561D
TCD2561D
D147
d122
D128 transistor datasheet
Photodiode-Array 64-element
DIODE D126
D128
D128 transistor
IC D132
D133
D149 diode
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S124
Abstract: Photodiode Array 32 element
Text: TCD2561D TOSHIBA CCD Linear Image Sensor CCD charge coupled device TCD2561D The TCD2561D is a high sensitive and low dark current 5340 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2561D
TCD2561D
S124
Photodiode Array 32 element
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S124
Abstract: No abstract text available
Text: TCD2561D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2561D The TCD2561D is a high sensitive and low dark current 5340 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2561D
TCD2561D
S124
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S124
Abstract: image sensor clamp switch D-149 D147 D149
Text: TCD2704D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2704D The TCD2704D is a high sensitive and low dark current 7500 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2704D
TCD2704D
S124
image sensor clamp switch
D-149
D147
D149
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S124
Abstract: No abstract text available
Text: TCD2561D TOSHIBA CCD Linear Image Sensor CCD charge coupled device Preliminary TCD2561D The TCD2561D is a high sensitive and low dark current 5340 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2561D
TCD2561D
S124
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S124
Abstract: S7500
Text: TCD2704D TOSHIBA CCD Linear Image Sensor CCD charge coupled device TCD2704D The TCD2704D is a high sensitive and low dark current 7500 elements x 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. The sensor is designed for scanner. The device contains a row of
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TCD2704D
TCD2704D
S124
S7500
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Sj 35 diode
Abstract: 1SS118
Text: 1SS118-Silicon Epitaxial Planar Diode for High Speed Switching Features Outline High average forward current. I o=20GmA High reliability with glass seal. =d= 1- I f - 1 1 S1 I 1- iL—— I \ Ordering Information
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1SS118
20GmA)
Do-35
1SS118
Sj 35 diode
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s118 diode
Abstract: diode s118
Text: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-297 Z Rev. 0 Dec. 1994 Features • High average forward current. (I0 = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code
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1SS118
200mA)
ADE-208-297
DO-35
DO-35
s118 diode
diode s118
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1SS118
Abstract: s118 diode s118 diode s118
Text: ADE-208-297 Z 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev. 0 Dec. 1994 Outline • High average forward current. (I o=200mA) • High reliability with glass seal. =C3= 3c: IE Type No. Cathode band Ordering Information
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1SS118
200mA)
ADE-208-297
Do-35
1SS118
DO-35
SC-48
s118 diode
s118
diode s118
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Untitled
Abstract: No abstract text available
Text: ADE-208-297 Z 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Rev. 0 Dec. 1994 Outline Features • High average forward current. (I o=2()0mA) • High reliability with glass seal. =cis= |S1 Type No. Cathode band Ordering Information
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1SS118
ADE-208-297
Do-35
HITAS079
1SS118
SC-48
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ss 297 transistor
Abstract: Q62702-S616 sm 559 b* siemens bss 297 transistor transistor bss transistor Siemens sS 92
Text: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type ¡D 0.48 A BSS 297 VDS 200 V Type BSS 297 BSS 297 BSS 297 Ordering Code Q62702-S616 Q67000-S118 Q67000-S292 ^DS(on)
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Q62702-S616
Q67000-S118
Q67000-S292
E6288
E6325
ss 297 transistor
sm 559 b* siemens
bss 297 transistor
transistor bss
transistor Siemens sS 92
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bss 97 transistor
Abstract: ss 297 transistor
Text: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • '/GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 297 ^DS 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 b 0.48 A ffDS<on) 2Q Pin 3 D Package
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Q67000-S118
Q67000-S292
E6288
E6325
bss 97 transistor
ss 297 transistor
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Untitled
Abstract: No abstract text available
Text: BSS 297 In fin e o n technologie* SIPMOS • Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 * ^ G S th VPT05548 = 0.8.2.0V Pin 1 Pin 2 G Type Vbs BSS 297 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 0.48 A
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VPT05548
Q67000-S118
Q67000-S292
E6288
E6325
S35bQ5
Q133777
SQT-89
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Untitled
Abstract: No abstract text available
Text: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7
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S1103
S1104
S1106
DS1107
S1108
S1185
AD1185
1N4148,
1N914B,
1N5282
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74hc123
Abstract: No abstract text available
Text: SbE D • 7^237 0 G 3 C1Û52 032 ■ S6TH r r r s c s -th o m s o n * 7 # OMilD glS IilLilÊTnM ROO i M 5 4 H C 123 M 7 4 H C 123 S G S-TH0MS0N T - S l- I^ DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR ■ HIGH SPEED t PD= 28 ns (TYP) at VCc = 5V ■ LOW POWER DISSIPATION
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M54/74HC123
74hc123
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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