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    DIODE RP 4040 Search Results

    DIODE RP 4040 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE RP 4040 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ES51998 60000counts DMM Analog front end/Insulation/Peak Features • 60000 counts dual-slope SADC (2 cnvs/s.) • Input signal full scale: 630mV (Max. 63000 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20 times/s • 100L LQFP package


    Original     		PDF ES51998 60000counts) 630mV 000nF ES636)

    LOG112

    Abstract: LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380
    Text: OPA380 OPA2380 SBOS291B − NOVEMBER 2003 − REVISED MAY 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)


    Original     		PDF OPA380 OPA2380 SBOS291B 90MHz 90MHz OPA380 LOG112 LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350

    LOG112

    Abstract: LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380
    Text: OPA380 OPA2380 SBOS291B − NOVEMBER 2003 − REVISED MAY 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)


    Original     		PDF OPA380 OPA2380 SBOS291B 90MHz 90MHz OPA380 LOG112 LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350

    Untitled

    Abstract: No abstract text available
    Text: ES51997 60000counts DMM Analog front end/Peak Features • 60000 counts dual-slope SADC (2 cnvs/s.) • Input signal full scale: 630mV (Max. 63000 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20 times/s • 100L LQFP package


    Original     		PDF ES51997 60000counts) 630mV 000nF counte70nF ES636)

    far uv photodiode

    Abstract: LOG112 LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380 SBOA060
    Text: OPA380 OPA2380 SBOS291C − NOVEMBER 2003 − REVISED JUNE 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)


    Original     		PDF OPA380 OPA2380 SBOS291C 90MHz far uv photodiode LOG112 LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380 SBOA060

    OPA380 OPA2380

    Abstract: AB-050 equivalent SBOS291A photodiode has capacitance of 5pf. bandwidth
    Text: OPA380 OPA2380 SBOS291A − NOVEMBER 2003 − REVISED MARCH 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)


    Original     		PDF OPA380 OPA2380 SBOS291A 90MHz OPA380 OPA2380 AB-050 equivalent photodiode has capacitance of 5pf. bandwidth

    diode FS601

    Abstract: No abstract text available
    Text: ES51970 6000counts DMM Analog front end with Inrush Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package


    Original     		PDF ES51970 6000counts) 630mV 000nF ES636) diode FS601

    Untitled

    Abstract: No abstract text available
    Text: ES51990 6000counts DMM Analog front end Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package


    Original     		PDF ES51990 6000counts) 630mV 000nF 470nF ES636)

    Untitled

    Abstract: No abstract text available
    Text: ES51995 6000counts DMM Analog front end with PEAK Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package


    Original     		PDF ES51995 6000counts) 630mV 000nF ES636)

    Untitled

    Abstract: No abstract text available
    Text: ES51980 6000counts DMM Analog front end/Insulation/Inrush Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s


    Original     		PDF ES51980 6000counts) 630mV 000nF ES636)

    Untitled

    Abstract: No abstract text available
    Text: ES51996 6000counts DMM Analog front end/Insulation Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package


    Original     		PDF ES51996 6000counts) 630mV 000nF 60SCL ES636)

    SCR 1989

    Abstract: No abstract text available
    Text: TCM1030, TCM1050 DUAL TRANSIENT-VOLTAGE SUPPRESSORS SCTS040B – JUNE 1989 – REVISED JUNE 1997 D D D D D D Meet or Exceed Bell Standard LSSGR Requirements Externally-Controlled Negative Firing Voltage . . . – 90 V Max Accurately Controlled, Wide Negative


    Original     		PDF TCM1030, TCM1050 SCTS040B TCM1030 SCR 1989

    134 kHz RFID antenna design

    Abstract: No abstract text available
    Text: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended


    Original     		PDF LMV221 SNWS018C LMV221 134 kHz RFID antenna design

    Untitled

    Abstract: No abstract text available
    Text: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended


    Original     		PDF LMV221 SNWS018C LMV221

    Untitled

    Abstract: No abstract text available
    Text: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended


    Original     		PDF LMV221 SNWS018C LMV221

    diode RP 4040

    Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
    Text: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t


    OCR Scan     		PDF TNF300 diode RP 4040 diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M

    DIODE REDRESSEMENT 4040

    Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
    Text: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)


    OCR Scan     		PDF 1000A2 2500A2 TNF300 DIODE REDRESSEMENT 4040 RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040

    diode RP 1040

    Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
    Text: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)


    OCR Scan     		PDF 1000A2 2500A2 CB-3191 diode RP 1040 DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040

    fr 608 diode

    Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
    Text: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)


    OCR Scan     		PDF 1000A2 2500A2 6xCB80 6xP150 6xTNF150 fr 608 diode DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431

    Untitled

    Abstract: No abstract text available
    Text: TCM1030, TCM1050 DUAL TRANSIENT-VOLTAGE SUPPRESSORS S C TS 040B - J U N E 1989 - R EVISED JU NE 1997 • • Meet or Exceed Bell Standard LSSGR Requirements D OR P PACKAGE TOP VIEW Externally-Controlled Negative Firing Voltage . . . -9 0 V Max • Accurately Controlled, Wide Negative


    OCR Scan     		PDF TCM1030, TCM1050 TCM1030 TCM1030. TCM1050

    74VHC4040

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R -n 74VHC4040 12-Stage Binary Counter General Description Features The VH C4040 is an advanced high-speed CM OS device fabricated w ith silicon g a le CM OS technology. It achieves the high-speed operation sim ilar to equivalent B ipolar Schottky T T L w hile m aintaining the CM OS low pow er dissipation.


    OCR Scan     		PDF 74VHC4040 12-Stage C4040

    74LS82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
    Text: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­


    OCR Scan     		PDF

    diode RP 4040

    Abstract: APT4040B APT4030 j0501
    Text: ADVANCED POW ER Te c h n o l o g y q O D r APT4030BN APT3530BN APT4040BN APT3540BN Ô S ¡5 WER MOS m 400V 350V 400V 350V 18.5A 18.5A 16.0A 16.0A 0.300 0.30Q 0.40Q 0.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		PDF APT4030BN APT3530BN APT4040BN APT3540BN 3530BN 4030BN 3540BN 4040BN APT4030/3530/4040/3540BN APT4030/4040BN diode RP 4040 APT4040B APT4030 j0501