W3455QK
Abstract: D-68623
Text: WESTCODE An Date:- 8 Aug, 2006 Data Sheet Issue:- 1 IXYS Company Provisional Data Wespack Rectifier Diode Types W3455QK200 to W3455QK220 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2000–2200
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W3455QK200
W3455QK220
W3455QK220
W3455QK
D-68623
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 8 Aug, 2006 Data Sheet Issue:- 1 IXYS Company Provisional Data Wespack Rectifier Diode Types W3455QK200 to W3455QK220 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2000–2200
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W3455QK200
W3455QK220
W3455QK220
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600-12N1
Abstract: MDA 2500 mdd600 D-68623 22n1
Text: Date: 26.11.2004 IXYS Data Sheet Issue: 3 Dual Diode Modules MD# 600 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 600-12N1 600-12N1 600-12N1 1400 600-14N1 600-14N1 600-14N1 1600 600-16N1 600-16N1 600-16N1 1800 600-18N1 600-18N1 600-18N1 2000 600-20N1
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600-12N1
600-14N1
600-16N1
600-18N1
600-12N1
MDA 2500
mdd600
D-68623
22n1
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MDD600-14N1
Abstract: 600-18N1 MDA 2500 D-68623 MDD Series
Text: Date: 13.09.2004 IXYS Data Sheet Issue: 2 Dual Diode Modules MD# 600 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 600-12N1 600-12N1 600-12N1 1400 600-14N1 600-14N1 600-14N1 1600 600-16N1 600-16N1 600-16N1 1800 600-18N1 600-18N1 600-18N1 2000 600-20N1
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600-12N1
600-14N1
600-16N1
600-18N1
MDD600-14N1
600-18N1
MDA 2500
D-68623
MDD Series
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Untitled
Abstract: No abstract text available
Text: Date: 26.11.2004 IXYS Data Sheet Issue: 3 Dual Diode Modules MD# 600 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 600-12N1 600-12N1 600-12N1 1400 600-14N1 600-14N1 600-14N1 1600 600-16N1 600-16N1 600-16N1 1800 600-18N1 600-18N1 600-18N1 2000 600-20N1
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600-12N1
600-14N1
600-16N1
600-18N1
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Untitled
Abstract: No abstract text available
Text: Date: 25.05.2005 IXYS Data Sheet Issue: 3 Dual Diode Water Cooled Modules MD# 950 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 950-12N1W 950-12N1W 950-12N1W 1400 950-14N1W 950-14N1W 950-14N1W 1600 950-16N1W 950-16N1W 950-16N1W 1800 950-18N1W 950-18N1W
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950-12N1W
950-14N1W
950-16N1W
950-18N1W
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ixys 0920
Abstract: D-68623
Text: Date: 23.05.2005 IXYS Data Sheet Issue: 2 Dual Diode Water Cooled Modules MD# 950 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 950-12N1W 950-12N1W 950-12N1W 1400 950-14N1W 950-14N1W 950-14N1W 1600 950-16N1W 950-16N1W 950-16N1W 1800 950-18N1W 950-18N1W
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950-12N1W
950-14N1W
950-16N1W
950-18N1W
ixys 0920
D-68623
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Untitled
Abstract: No abstract text available
Text: Date: 23.05.2005 IXYS Data Sheet Issue: 2 Dual Diode Water Cooled Modules MD# 950 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 950-12N1W 950-12N1W 950-12N1W 1400 950-14N1W 950-14N1W 950-14N1W 1600 950-16N1W 950-16N1W 950-16N1W 1800 950-18N1W 950-18N1W
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950-12N1W
950-14N1W
950-16N1W
950-18N1W
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modules
Abstract: 950-22N1W ixys 0920 D-68623
Text: Date: 25.05.2005 IXYS Data Sheet Issue: 3 Dual Diode Water Cooled Modules MD# 950 Absolute Maximum Ratings VRRM VDRM [V] MDD MDA MDK 1200 950-12N1W 950-12N1W 950-12N1W 1400 950-14N1W 950-14N1W 950-14N1W 1600 950-16N1W 950-16N1W 950-16N1W 1800 950-18N1W 950-18N1W
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950-12N1W
950-14N1W
950-16N1W
950-18N1W
modules
950-22N1W
ixys 0920
D-68623
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55120 ferrite
Abstract: 58050 3 pin transistor 58050 byv 32 diode L4985 LXF CAPACITORS 12V DC to 24V dC converter schematic diagram 330nF capacitor LXF Series osc coil 85khz
Text: APPLICATION NOTE HIGH EFFICIENCY DOUBLE DC-DC CONVERTER WITH L4985 by : Claudio Adragna The growing use of portable equipments supplied by rechargeable batteries requests the implementation of power supplies able to operate with high efficiency at low voltages, as well as to perform
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L4985
L4985
55120 ferrite
58050 3 pin transistor
58050
byv 32 diode
LXF CAPACITORS
12V DC to 24V dC converter schematic diagram
330nF capacitor
LXF Series
osc coil 85khz
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AT91-AN02: Signal Integrity and AT91 Products
Abstract: AT91sam SI AT91SAM9260 AT91SAM hyperlynx hyperlynx atmel AT91device AT91SAM9260 pll
Text: AT91-AN02: Signal Integrity and AT91 Products Basic Relationships Between IBIS Data and your PCB 1. Scope The purpose of this document is to heighten the customer's awareness of Signal Integrity (SI) issues before the start of a design using an Atmel AT91 ARM Thumb®
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AT91-AN02:
12-Jun-08
AT91-AN02: Signal Integrity and AT91 Products
AT91sam SI
AT91SAM9260
AT91SAM
hyperlynx
hyperlynx atmel
AT91device
AT91SAM9260 pll
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Untitled
Abstract: No abstract text available
Text: Date: 17.03.2005 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 500 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC MCA MCK MCDA MDCA 1200 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1 500-12io1 1400 500-14io1 500-14io1 500-14io1 500-14io1
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500-12io1
500-14io1
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MCD700-14io1W
Abstract: modules ixys MCC 90 700-16io1W Westcode N thyristor M7001 1000A 1000V thyristor ixys 0920 D-68623 ixys MCC 700
Text: Date: 27.01.2005 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 700 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC MCA MCK MCDA MDCA 1200 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 1400 700-14io1W 700-14io1W 700-14io1W
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700-12io1W
700-14io1W
MCD700-14io1W
modules
ixys MCC 90
700-16io1W
Westcode N thyristor
M7001
1000A 1000V thyristor
ixys 0920
D-68623
ixys MCC 700
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Untitled
Abstract: No abstract text available
Text: Date: 27.01.2005 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 700 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC MCA MCK MCDA MDCA 1200 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 1400 700-14io1W 700-14io1W 700-14io1W
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700-12io1W
700-14io1W
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2000A power diode qrr
Abstract: diode RP 1040
Text: IXYS Date:- 28 Jul, 2004 Data Sheet Issue:- 2 Thyristor/Diode Module Types M##500-12io1 to M##500-18io1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1200-1800 V VDSM Non-repetitive peak off-state voltage, (note 1)
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500-12io1
500-18io1
2000A power diode qrr
diode RP 1040
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DIODE REDRESSEMENT 4040
Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Text: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)
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1000A2
2500A2
TNF300
DIODE REDRESSEMENT 4040
RP 8040 X
diode RP 4040
la 8040
G 402 rp
402 rp
KU 612
RP8040
DRA402
LA 4040
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diode RP 1040
Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)
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1000A2
2500A2
CB-3191
diode RP 1040
DRA 402 DIODE
1N SERIES DIODE
DRA402
DRA 402
diode RP 4040
diode 1N 3768 r
RP8040R
fr 608 diode
DIODE REDRESSEMENT 4040
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fr 608 diode
Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)
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1000A2
2500A2
6xCB80
6xP150
6xTNF150
fr 608 diode
DIODE REDRESSEMENT
1N SERIES DIODE
B-408 diode
ku 611
KU 612
diode 736
diode RP 4040
fr 608
KU1506
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carbon microphone
Abstract: al24
Text: KEYPAD CONTROLLED SINGLE-CHIP TELEPHONE IC LB1008AE PRELIMINARY Description The LB1008AE integrated circuit requires only a few external components see Figure 19 to provide all of the touch-tone electronic functions. This integrated circuit furnishes ac and dc loop termination for both switchhook states, transmits
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LB1008AE
LB1008AE
carbon microphone
al24
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IRFZ34 mosfet
Abstract: IRFZ34 ic regulator 48v 30a
Text: IRFZ34 A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature
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IRFZ34
IRFZ34 mosfet
IRFZ34
ic regulator 48v 30a
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IRFZ34A
Abstract: No abstract text available
Text: IRFZ34A A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature
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IRFZ34A
IRFZ34A
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Untitled
Abstract: No abstract text available
Text: IRFR/U034A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 60 V 0.04Î2 ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 23 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 60V
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IRFR/U034A
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mosfet 30A
Abstract: No abstract text available
Text: IRFW/IZ34A A dvanced Power MOSFET FEATURES B V DSS — 6 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature
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IRFW/IZ34A
mosfet 30A
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ic regulator 48v 30a
Abstract: IRFWZ34
Text: IRFWZ34 A dvanced Power MOSFET FEATURES B V DSS — 6 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature
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IRFWZ34
ic regulator 48v 30a
IRFWZ34
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