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    DIODE RN731V Search Results

    DIODE RN731V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE RN731V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode RN731V

    Abstract: RN731V VHF-UHF band variable attenuators and AGC variable attenuators and AGC
    Text: Diodes PIN diode RN731V FExternal dimensions Units: mm High frequency diodes FApplications VHF / UHF band variable attenuators and AGC FFeatures 1) Small surface mounting type. (UMD2) 2) Low high–frequency forward resistance (rF ) / low capacitance (CT ).


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    PDF RN731V Diode RN731V RN731V VHF-UHF band variable attenuators and AGC variable attenuators and AGC

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    Abstract: No abstract text available
    Text: RN731V Diodes PIN diode RN731V zApplications zExternal dimensions Unit : mm VHF / UHF band variable attenuators and AGC. 0.9MIN. 0.8MIN. 2.1 CATHODE MARK 2.5±0.2 1.7±0.1 zFeatures 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low


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    PDF RN731V S0D-323 SC-90/A

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    Abstract: No abstract text available
    Text: RN731V Diodes PIN diode RN731V Applications VHF / UHF band variable attenuators and AGC. Dimensions Unit : mm Land size figure (Unit : mm) Features 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low capacitance (CT). Construction Silicon epitaxial planar


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    PDF RN731V

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    Abstract: No abstract text available
    Text: RN731V RN731V Diodes PIN diode RN731V zApplications zDimensions Unit : mm VHF / UHF band variable attenuators and AGC. 1.25±0.1 zLand size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2)


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    PDF RN731V S0D-323 SC-90/A

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    Abstract: No abstract text available
    Text: RN731V Diodes PIN diode RN731V zApplications zExternal dimensions Unit : mm VHF / UHF band variable attenuators and AGC. 1.25±0.1 zLand size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2)


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    PDF RN731V S0D-323 SC-90/A

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    Abstract: No abstract text available
    Text: RN731VFH Diodes PIN diode AEC-Q101 Qualified RN731VFH zLand size figure Unit : mm zApplications zDimensions (Unit : mm) VHF / UHF band variable attenuators and AGC. 1.25±0.1 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2)


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    PDF RN731VFH AEC-Q101 S0D-323 SC-90/A

    RN731V

    Abstract: No abstract text available
    Text: RN731V Diodes PIN diode RN731V !External dimensions Units : mm !Applications VHF/UHF band variable attenuators and AGC. 2.5±0.2 9 1.25±0.1 9 0.1 +0.1 −0.05 0.3±0.2 1.25±0.1 Symbol Limits DC reverse voltage VR 50 V DC forward current IF 50 mA Power dissipation


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    PDF RN731V RN731V

    Diode RN731V

    Abstract: RN731V
    Text: RN731V Diodes PIN diode RN731V !External dimensions Units : mm !Applications VHF/UHF band variable attenuators and AGC. 2.5±0.2 9 1.25±0.1 9 0.1 +0.1 −0.05 0.3±0.2 1.25±0.1 Symbol Limits DC reverse voltage VR 50 V DC forward current IF 50 mA Power dissipation


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    PDF RN731V UMD20 100MHz 10MHz Diode RN731V RN731V

    RN731V

    Abstract: No abstract text available
    Text: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RN731V No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI


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    PDF 29-Sep-06 RN731V 084E-19 008E-13 000E-09 323E-06 RN731V

    138KV

    Abstract: RN731V
    Text: RN731V Diodes PIN diode RN731V zApplications zDimensions Unit : mm VHF / UHF band variable attenuators and AGC. 1.25±0.1 zLand size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low


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    PDF RN731V S0D-323 SC-90/A 138KV RN731V

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    Abstract: No abstract text available
    Text: RN731V Diodes PIN diode RN731V zApplications zDimensions Unit : mm VHF / UHF band variable attenuators and AGC. 1.25±0.1 zLand size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low


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    PDF RN731V S0D-323 SC-90/A

    TR8025

    Abstract: RB751V-40 TE-17 1SR35-400A T-82 1SR159-200TE25 1SS376 te-17 ROHM udz te-17 RB063L-30TE25 1SS133 T-77 RB751S-40TE61 RB441Q-40
    Text: Table of characteristics Diodes Table of characteristics Small signal diodes !Switching diodes ROHM has an overwhelming production capability of high reliable switching diodes in the industry. The superior antisurge characteristics of the UMD2 package in spite of the small size is noteworthy. A wide variety of diode arrays


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    PDF 1SS400 DAN222 UMZ12N TR8025 RB751V-40 TE-17 1SR35-400A T-82 1SR159-200TE25 1SS376 te-17 ROHM udz te-17 RB063L-30TE25 1SS133 T-77 RB751S-40TE61 RB441Q-40

    DAN235U equivalent

    Abstract: RLS73 equivalent DAP236U equivalent 1SS376 T146 UDZS te Series Diode T148 DAP222 DAP202U DAN202U
    Text: Diode Product Solutions www.rohm.co.uk Surface Mounting Type General Purpose Diodes/Arrays Application Features Absolute maximum ratings Ta=25oC Part No. VR (V) IO (mA) 80 80 80 80 80 80 80 80 80 20 20 80 20 80 80 80 80 80 80 80 80 80 80 35 250 220 100 100


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    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


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    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


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    BFQ93A

    Abstract: Philips varicap BFG18 MPF102 modelS philips catv 860 amplifier ic BFG480W j175 fet 2SK163 2SK43 transistor baw 92
    Text: RF 매뉴얼 7차판 Application and design manual for RF products November 2005 발행일: 2005년 11월 문서 주문 번호: 9397 750 15371 Philips RF Manual 7th Edition 2 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 당사의 RF 매뉴얼 7차판을 찾아주신 고객님을 환영합니다. 저희는 애플리케이션에 기반한 정보에 완전


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    CGD923

    Abstract: 2SK163 BFG480W 3SK290 BF1009SW bf998 BFG591 amplifier 1T404A 2N5116 2N5653
    Text: セミコンダクタ RFマニュアル第6版 RF製品のアプリケーションおよびデザイン・マニュアル 2005年5月 リリース日付:2005年5月 ドキュメント注文番号: 9397 750 15125 セミコンダクタ RF製品担当副社長兼ジェネラル・マネージャ


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    PDF solutions/multimarket/transistors/25 CGD923 2SK163 BFG480W 3SK290 BF1009SW bf998 BFG591 amplifier 1T404A 2N5116 2N5653

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


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    Motorola transistor smd marking codes

    Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier
    Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become


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    Motorola transistor smd marking codes

    Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
    Text: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new


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    PDF November2006 2006NXPB Motorola transistor smd marking codes MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


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    PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    Untitled

    Abstract: No abstract text available
    Text: Diodes PIN Diode RN731V •A pplications VHF/UHF band variable attenuators and AGC •E x te rn a l dimensions Units: mm CATHODE MARK - High frequency diodes / •F e a tu re s 1) Designed for mounting on small surface areas (UM D2). 2 )L o w h ig h - fr e q u e n c y fo r w a rd re s is ta n c e


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    PDF RN731V 100MHz