4321F
Abstract: TG12 LT432
Text: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and
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LT4321
RJ-45
LT4321
LTC4355
LTC4359
LTC4290/LTC4271
4321f
com/LT4321
4321F
TG12
LT432
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HSCH-9301
Abstract: Avago Technologies Schottky 5965-8852EN C3 9301
Text: HSCH-9301 GaAs Beam Lead Schottky Ring Quad Diode Data Sheet Description The HSCH-9301 ring quad uses advanced gallium arsenide Schottky barrier diodes. These diodes are fabricated utilizing molecular beam epitaxy MBE manufacturing techniques. It features rugged construction and consistent electrical performance. A
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HSCH-9301
HSCH-9301
5965-8852EN
5988-5515EN
Avago Technologies Schottky
5965-8852EN
C3 9301
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BY 178 DIODE
Abstract: HSCH-9301 handling of beam lead diodes F 9301 HP4271
Text: Agilent HSCH-9301 GaAs Beam Lead Schottky Ring Quad Diode Data Sheet Features • Gold tri-metal system for improved reliability • Low capacitance • Low series resistance • High cutoff frequency • Polyimide passivation Description The HSCH-9301 ring quad uses
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HSCH-9301
HSCH-9301
5965-8852E
5988-5515EN
BY 178 DIODE
handling of beam lead diodes
F 9301
HP4271
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Untitled
Abstract: No abstract text available
Text: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description
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HSCH-9301
HSCH-9351
HSCH-9301
HSCH-9351
5965-8852E
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Untitled
Abstract: No abstract text available
Text: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description
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HSCH-9301
HSCH-9351
HSCH-9301
HSCH-9351
5965-8852E
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application note 979
Abstract: 9351 HSCH-9301 HSCH9351 HSCH-9351 ABLESTIK 71-2
Text: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description
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HSCH-9301
HSCH-9351
HSCH-9301
HSCH-9351
application note 979
9351
HSCH9351
ABLESTIK 71-2
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9351
Abstract: diode ring mixer 9351 equivalent HSCH-9301 HSCH-9351 HSCH9351 HP 9301 SONY+msl+9351
Text: Agilent HSCH-9301/HSCH-9351 GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Data Sheet HSCH-9301 Junction Side up 125 (4.9) 115 (4.1) 183 (7.2) 178 (7.0) 756 (29.8) 746 (29.4) 390 (15.4) 310 (12.2) Features 125 (4.9) 105 (4.1) L = 0.1 nH 346 (13.6)
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HSCH-9301/HSCH-9351
HSCH-9301
HSCH-9301
HSCH-9351
HSCH-9301/-9351/rev
9351
diode ring mixer
9351 equivalent
HSCH9351
HP 9301
SONY+msl+9351
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DIODE RF DETECTOR
Abstract: AN10896 zero bias diode block diagram of schottky diode HSMS-2850 HSMS-285X RJ-9 HSMS2850 HSMS-2852 HSMS-8101
Text: Designing Detectors for RF/ID Tags Application Note 1089 Abstract The RF/ID market is growing rapidly, with everything from cattle to cars carrying radio frequency identification RF/ID tags. Severe cost, size and DC power constraints in the tag itself have forced designers to abandon superheterodyne receivers for the older and simpler crystal
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5966-0786E
AV02-1577EN
DIODE RF DETECTOR
AN10896
zero bias diode
block diagram of schottky diode
HSMS-2850
HSMS-285X
RJ-9
HSMS2850
HSMS-2852
HSMS-8101
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PIN Diode Switch for frequencies up to 10 GHz
Abstract: superheterodyne receiver GHz radar metal detector diagrams 2.45 GHz single chip transmitter Optotek zero bias diode
Text: Designing Detectors for RF/ID Tags Application Note 1089 Abstract The RF/ID market is growing rapidly, with everything from cattle to cars carrying radio frequency identification RF/ID tags. Severe cost, size and DC power constraints in the tag itself have
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5966-0786E
PIN Diode Switch for frequencies up to 10 GHz
superheterodyne receiver GHz
radar metal detector diagrams
2.45 GHz single chip transmitter
Optotek
zero bias diode
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diode hp 2800
Abstract: hp 2800 diode hp diode 2800 diode rj 93 5082-2824 DIODE 2800 hp 5082-2800 diode
Text: Square Law and Linear Detection Application Note 986 100 Introduction Above about -10 dBm the slope is closer to linear but may vary about 30% for different values of frequency, diode capacitance, and load resistance. The slope may be controlled by tuning at the proper power
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BB205
Abstract: 104 varicap varicap varicap an BA282 BA479G BA679 BA682 power diodes with V-I characteristics varicap diodes
Text: VISHAY Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state
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BA282,
BA682
BA479G
BA679.
08-Jan-04
BB205
104 varicap
varicap
varicap an
BA282
BA679
power diodes with V-I characteristics
varicap diodes
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BB205
Abstract: power diodes with V-I characteristics BA282 BA479G BA679 BA682 Varicap
Text: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current
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BA282,
BA682
BA479G
BA679.
BB205
power diodes with V-I characteristics
BA282
BA679
Varicap
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BB205
Abstract: ir tk 69 104 varicap BA282 BA479G BA679 BA682 varicap diode HR varicap diodes diodes varicap
Text: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current
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BA282,
BA682
BA479G
BA679.
BB205
ir tk 69
104 varicap
BA282
BA679
varicap diode HR
varicap diodes
diodes varicap
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pn junction diode
Abstract: BB205 varicap varicap diode vhf ba479 reverse-biased in pn junction diode General Diode BA282 BA479G BA679
Text: VISHAY Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state
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BA282,
BA682
BA479G
BA679.
20-Jan-04
pn junction diode
BB205
varicap
varicap diode vhf
ba479
reverse-biased in pn junction diode
General Diode
BA282
BA679
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varicap an
Abstract: BB205 BA282 BA479G BA679 BA682 diodes varicap
Text: Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state devices having asymmetrical voltage-current
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BA282,
BA682
BA479G
BA679.
varicap an
BB205
BA282
BA679
diodes varicap
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BB205
Abstract: varicap diode vhf pn junction diode BA282 BA479G BA682 BA679
Text: VISHAY Vishay Semiconductors Physical Explanation General Terminology Semiconductor diodes are used as rectifiers, switchers, Varicaps and voltage stabilizers see chapter ‘Voltage Regulator and Z-diodes’ . Semiconductor diodes are two-terminal solid-state
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BA282,
BA682
BA479G
BA679.
08-Jan-04
BB205
varicap diode vhf
pn junction diode
BA282
BA679
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elcon SERIES 1000
Abstract: No abstract text available
Text: Intrinsic Safety Isolation Barriers SIB 1000 Series 380 $ Basic Unit C A B A B ߜ Input Output Isolation ߜ For J, K, T, E, R, S, B Thermocouples, mV, and Pt100 and Ni100 RTDs ߜ Converts Signal from Hazardous Location into 4 to 20 mA Signal ߜ Field Programmable
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Pt100
Ni100
SIB-BP-1116-TB-R
KTSS-316G-12
TQSS-316G-12
12AWG
elcon SERIES 1000
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Untitled
Abstract: No abstract text available
Text: D 2 I ,< rj — 1 M ^ - 1 2 i o o a 3.—JU W ïfé T l'ïi : Outline Drawings POWER TRANSISTOR MODULE • 9U S : Features • JSSSRS^iSSl.' High Arm Short Circuit Capability • hFEfr'Sv.' High DC Current Gain • 7 'J —f r 'f'J > $ ¥ 4 % —KrtSR Including Freewheeling Diode
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E82988
I95t/R89)
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Bridge diodes
Abstract: No abstract text available
Text: Whal HEWLETT iL'ttM PACKARD GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 F eatu res • Gold Tri-M etal System For Improved Reliability • Low C ap acitan ce • Low S eries R esistan ce • H igh C utoff F req u en cy
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HSCH-9301
HSCH-9351
HSCH-9351
HSCH-9301
Bridge diodes
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Untitled
Abstract: No abstract text available
Text: •I 4447564 Q 0 0 tlbD4 02^ ■ H P A HEIilLETT-PACKAR] / CMPNTS m,~m LIE I HEWLETT mPrM D A HKion GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold T ri-M etal System For Improved Reliability • Low C ap acitan ce
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HSCH-9301
HSCH-9351
HSCH-9301
HSCH-9351
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IR712
Abstract: ABLESTIK 71-2
Text: H EW L E T T wLTM PA CK A R D GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation
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HSCH-9301
HSCH-9351
HSCH-9301
HSCH-9351
IR712
ABLESTIK 71-2
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application note 979
Abstract: ABLESTIK 71-2 handling of beam lead diodes HP 9301
Text: miltm HP AE WC KLAERT DT * What GaAs Beam Lead Schottky Barrier Ring and Bridge D iodes Technical Data HSCH-9301 HSCH-9351 Features HSCH-9301 Junction Side Up • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance
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HSCH-9301
HSCH-9351
HSCH-9301
HSCH-9351
application note 979
ABLESTIK 71-2
handling of beam lead diodes
HP 9301
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transistor 30021
Abstract: 7907 transistor FUH -29A001B VA703J VA703S operational transconductance amplifier 1380D 8002f hd 104k CAPACITORS K235
Text: V T 9388929 C INC TTD D | c1 3 â f l li 5 cl l 3 ü ü l 3 7 5 1 | 9 9D V T C INC 01375 D T - 7 9 - Ö 7 - VA703 HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES P R E LIM IN A R Y CONNECTION DIAGRAMS Dual In-Llne/SOIC Package FEATURES
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GGG1375
VA703
T-71-Ã
75MHz
VA703
-10uf
transistor 30021
7907 transistor
FUH -29A001B
VA703J
VA703S
operational transconductance amplifier
1380D
8002f
hd 104k CAPACITORS
K235
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AM29C953
Abstract: Am29C855 AM29C853
Text: A m 29C 833/A m 29C 853/A m 29C 855 A m 29C 933/A m 29C 953/A m 29C 955 Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 High-Performance CMOS Parity Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • High-speed CMOS bidirectional bus transceivers
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833/A
853/A
933/A
953/A
Am29C833/Am29C853/Am29C855
Am29C933/Am29C953/Am29C955
Am29C855
200-mV
Am29C900
Am29C833
AM29C953
AM29C853
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