TC1617
Abstract: TCM1617MQR 200B TCM1617 TCM1617EV TCN75
Text: EVALUATION KIT AVAILABLE TCM1617 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs
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TCM1617
TCM1617
TCM1617-1
DS21485A
TC1617
TCM1617MQR
200B
TCM1617EV
TCN75
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200B
Abstract: TC1068 TC1068MQR TCM1617EV TCN75
Text: EVALUATION KIT AVAILABLE TC1068 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs
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TC1068
TC1068
TC1068-1
DS21352A
200B
TC1068MQR
TCM1617EV
TCN75
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RG4Z
Abstract: diode rg4z RG4Z DIODE
Text: RG4Z ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 200 Volts Io : 1.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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DO-201AD
DO-201AD
UL94V-O
MIL-STD-202,
RG4Z
diode rg4z
RG4Z DIODE
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RG4Y
Abstract: No abstract text available
Text: RG4Y ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 70 Volts Io : 2.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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DO-201AD
DO-201AD
UL94V-O
MIL-STD-202,
RG4Y
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DIODE RG4A
Abstract: RG4A
Text: RG4A ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 600 Volts Io : 1.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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DO-201AD
DO-201AD
UL94V-O
MIL-STD-202,
20x20x1tCu
DIODE RG4A
RG4A
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Untitled
Abstract: No abstract text available
Text: RG4 ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 400 Volts Io : 1.0 Amperes DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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DO-201AD
DO-201AD
UL94V-O
MIL-STD-202,
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RG4 DIODE
Abstract: rg4 16 diode RG4 01 DIODE RG4
Text: RG4 ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 400 Volts Io : 1.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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DO-201AD
DO-201AD
UL94V-O
MIL-STD-202,
RG4 DIODE
rg4 16 diode
RG4 01
DIODE RG4
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diode rg4c
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. RG4C １ Scope The present specifications shall apply to an RG4C. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification ３ Flammability UL94V-0 Equivalent ４ Absolute maximum ratings No.
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UL94V-0
diode rg4c
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DIODE RG4A
Abstract: rg4a diode
Text: RG4A to RG4J VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway
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MIL-STD-750,
D-74025
28-Jan-03
DIODE RG4A
rg4a diode
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DIODE RG4A
Abstract: No abstract text available
Text: RG4A / B / D / G / J VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway
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MIL-STD-750,
08-Apr-05
DIODE RG4A
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DIODE RG4A
Abstract: No abstract text available
Text: RG4A / B / D / G / J VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway
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MIL-STD-750,
D-74025
11-Aug-04
DIODE RG4A
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DIODE RG4A
Abstract: RG4A rg4a diode
Text: RG4A / B / D / G / J VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway
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MIL-STD-750,
18-Jul-08
DIODE RG4A
RG4A
rg4a diode
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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1.5SMC27AT3G
Abstract: No abstract text available
Text: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001NT1
DataMMG1001NT1
1.5SMC27AT3G
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 6, 7/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection
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MMG1001NT1
MMG1001T1
MMG1001NT1
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zener diode marking R11
Abstract: ZENER MARKING r12 jedec 0603 5.1 v zener 2512 470 5.1 ch amplifier circuit diagram
Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 6, 7/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection
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MMG1001NT1
MMG1001T1
MMG1001NT1
zener diode marking R11
ZENER MARKING r12
jedec 0603
5.1 v zener
2512 470
5.1 ch amplifier circuit diagram
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zener diode marking R11
Abstract: A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132
Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 7, 10/2006 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection
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MMG1001NT1
zener diode marking R11
A113
CTB112
CTB132
MMG1001NT1
XMD112
XMD132
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5.1 ch amplifier circuit diagram
Abstract: kw MHz transistor module motorola catv
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Integrated Amplifier Module MMG1001R2 Features • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Built-in Input Diode Protection
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132-Channel
MMG1001R2
79-Channel
MMG1001R2
5.1 ch amplifier circuit diagram
kw MHz transistor module
motorola catv
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crcw06031000fkta
Abstract: CRCW06035600FKTA ZENER MARKING r12 A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132 5.1 v zener
Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 8, 3/2007 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection
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MMG1001NT1
DataMMG1001NT1
crcw06031000fkta
CRCW06035600FKTA
ZENER MARKING r12
A113
CTB112
CTB132
MMG1001NT1
XMD112
XMD132
5.1 v zener
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crcw06031000fkta
Abstract: CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112
Text: Freescale Semiconductor Technical Data Gallium Arsenide CATV Integrated Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001NT1
crcw06031000fkta
CRCW06031200FKTA
CRCW06030000FKTA
CRCW06032001FKTA
GaAs FET chip
A113
CTB112
CTB132
MMG1001NT1
XMD112
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Untitled
Abstract: No abstract text available
Text: Harmonic Filters FN 3412 ECOsine Advanced Passive Harmonic Filters The industry standard for 6-pulse rectifiers and motor drives Approvals The most compact 5% THID filter available Excellent behavior under partial load conditions Filters for diode rectifiers
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C/460V
Mil-HB-217F)
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diode code m10
Abstract: No abstract text available
Text: ECOsine FN 3412 ECOsine™ Advanced Passive Harmonic Filters The industry standard for 6-pulse rectifiers and motor drives Approvals The most compact 5% THID filter available Excellent behavior under partial load conditions Filters for diode rectifiers
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C/460V
Mil-HB-217F)
250HP
480VAC
diode code m10
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Untitled
Abstract: No abstract text available
Text: Harmonic Filters FN 3410 ECOsine 60Hz Passive Harmonic Filters The industry standard for 6-pulse rectifiers and motor drives Approvals The most compact 5% THID filter available Excellent behavior under partial load conditions Filters for diode rectifiers
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C/460V
Mil-HB-217F)
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PDF
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Untitled
Abstract: No abstract text available
Text: ECOsine FN 3412 ECOsine™ Advanced Passive Harmonic Filters The industry standard for 6-pulse rectifiers and motor drives Approvals The most compact 5% THID filter available Excellent behavior under partial load conditions Filters for diode rectifiers
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C/460V
Mil-HB-217F)
250HP
480VAC
IEEE-76185
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