635-P5-C-N-RG-300-02
Abstract: SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm 635nm laser diode bare chip
Text: 635-P5-C-N-RG-300-02 UNION OPTRONICS CORP. 635nm Laser Diode chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-02 size : 300*300um Specifications Device Laser Diode Bare Chip Structure Multi-step growth •External dimensions Units : um P-electrode
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635-P5-C-N-RG-300-02
635nm
SLD-635-P5-C-N-RG-300-02
300um
500um
100um
886-3-475-437e
635-P5-C-N-RG-300-02
SLD-635-P5-C-N-RG-300-02
laser diode 635 nm
laser diode chip 635nm
laser diode bare chip
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laser diode bare chip
Abstract: laser diode chip 635nm
Text: SLD-635-P5-C-N-RG-300-04 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-04 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100µm Laser diode bare chip Multi-step growth ■External dimensions(Unit : m)
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SLD-635-P5-C-N-RG-300-04
635nm
laser diode bare chip
laser diode chip 635nm
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6R1MBi100P
Abstract: 1600V 100a igbt
Text: 6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi100P-160
400A/75A
6R1MBi100P
1600V 100a igbt
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Untitled
Abstract: No abstract text available
Text: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi75P-160
400A/50A
6R1MBi100P-160
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Untitled
Abstract: No abstract text available
Text: 6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi100P-160
400A/75A
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6R1MBi100P
Abstract: 6r1mbi75p-160 6r1mbi diode KE 01
Text: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi75P-160
400A/50A
6R1MBi100P-160
6R1MBi100P
6r1mbi75p-160
6r1mbi
diode KE 01
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Untitled
Abstract: No abstract text available
Text: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi75P-160
400A/50A
6R1MBi100P-160
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6R1MBI100P160
Abstract: 100A/IGBT 1600V 100a igbt
Text: 6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier
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6R1MBi100P-160
400A/75A
6R1MBI100P160
100A/IGBT
1600V 100a igbt
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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SAS diode
Abstract: high frequency diode BES100 "high frequency Diode"
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
high frequency diode
BES100
"high frequency Diode"
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SAS diode
Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
"high frequency Diode"
high frequency diode
Monolithic System Technology
BES100
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
D-55294
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diode RGP 30M
Abstract: No abstract text available
Text: RGP 30K, RGP 30M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Fast silicon rectifier diodes RGP 30K, RGP 30M Forward Current: 3 A
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041 DIODE
Abstract: diode 2j
Text: RGL 1A.RGL 1M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 5 Surface mount diode Fast silicon rectifier diodes RGL 1A.RGL 1M Forward Current: 1 A
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Untitled
Abstract: No abstract text available
Text: Laser Diodes y inar m i l pre iC-HT DUAL CW LASER DIODE DRIVER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ APPLICATIONS ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
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h30r1602
Abstract: IHY30N160R2 h30r160 PG-TO247HC-3
Text: IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages • Trench and fieldstop technology offers:
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IHY30N160R2
O-247HC
h30r1602
IHY30N160R2
h30r160
PG-TO247HC-3
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H15R1202
Abstract: IGBT H15R1202 H15R120 IHW15N120R2 PG-TO-247-3-21 600v 20a diode H15R1202 equivalent
Text: IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW15N120R2
PG-TO-247-3-21
PG-TO247-3-21
180nH
H15R1202
IGBT H15R1202
H15R120
IHW15N120R2
PG-TO-247-3-21
600v 20a diode
H15R1202 equivalent
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H20R1202
Abstract: h20r1202 igbt equivalent H20R1202 equivalent of h20r1202 igbt h20r1202 H20R IHW20N120R2 H20R120 H20R12 igbt 1200V 60A
Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW20N120R2
IHW20N120R2
H20R1202
h20r1202 igbt
equivalent H20R1202
equivalent of h20r1202
igbt h20r1202
H20R
H20R120
H20R12
igbt 1200V 60A
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ad130
Abstract: D1103 d1105 MMAD1109 AD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
AD1105
AD1107
ad130
D1103
d1105
MMAD1109
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AD130
Abstract: D1107 AD1105
Text: M OTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode A rray s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
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MMAD130/D
0EH0b32
AD130
D1107
AD1105
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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C240610
Abstract: No abstract text available
Text: _ CN24_10 CD24_ _ 10 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 F d S t RGCOVBTy Dual Diode Modules 100 Amperes/600-1200 Volts Description: Powerex Fast Recovery Dual Diode M odules are designed for
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Amperes/600-1200
peres/600-1200
CN241210
C240610
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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