R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS40-3
transistor R1d
transistor R1A
diode FR 105
TRANSISTOR 106 d1
R22A
MTBF-ZPS40
04112
78540
R18A
217F
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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217F
Abstract: resistor film transistor MTBF L2 diode 725
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA40-5
217F
resistor film
transistor MTBF
L2 diode 725
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DW84C2V4NND03-DW84C39NND03
Abstract: Jiangsu Changjiang Electronics Technology
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode - WBFBP-03B DW84C2V4NND03-DW84C39NND03 1.2x1.2×0.5 ZENER DIODE DESCRIPTION Epitaxial planar type Silicon diode TOP + 1. ANODE - 2. NC, 3.CATHODE FEATURES: z Ultra-Small Surface Mount Package
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WBFBP-03B
WBFBP-03B
DW84C2V4NND03-DW84C39NND03
DW84C24NND03
DW84C27NND03
DW84C30NND03
DW84C33NND03
DW84C36NND03
DW84C39NND03
DW84C2V4NND03-DW84C39NND03
Jiangsu Changjiang Electronics Technology
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laptop keyboard schematic
Abstract: No abstract text available
Text: TVS Avalanche Diode Array Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC Transient Voltage Suppression Avalanche Diode Array in a Chip Scale Package This family of avalanche diode arrays are designed for ESD protection and is offered in an ultra small chip scale package.
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SP0504BAC,
SP0508BAC,
SP0516BAC
350mm
152mm
360mm
SP0504BAC
laptop keyboard schematic
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Untitled
Abstract: No abstract text available
Text: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane
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LTC4229
24-Lead
MSOP-16
DFN-16
LTC4353
LTC4355
SO-16,
DFN-14
MSOP-16
LTC4357
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Untitled
Abstract: No abstract text available
Text: DUAL DIODE MODULE Spec.No.SR2-SP-08004 R5 MDM1200E17D FEATURES ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Repetitive Peak Reverse Voltage
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SR2-SP-08004
MDM1200E17D
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BCS028N06NS
Abstract: 028N06NS DC1502
Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a
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DC1502A
LTC4359HDCB
2V/20A
LTC4359
dc1502af
BCS028N06NS
028N06NS
DC1502
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06008R5
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-06008
MBL400E33D
000cycles)
06008R5
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-06008
MBL400E33D
000cycles)
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Melles Griot Laser Diode driver
Abstract: SPLPL90_0 diode laser power supply melles griot Melles Griot 4,7uF 50v R1720 1000X 10UF 2N7002 47UF
Text: EVLDO2 Evaluation Board For The IXLDO2 Ultra High Speed Laser Diode Driver IC. Introduction The IXLDO2 laser diode driver is designed to drive single junction laser diodes in a differential fashion. This technique provides the highest possible slew rate across the diode. The IXLDO2 is capable
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17MHz,
600pS.
10MHZ.
Melles Griot Laser Diode driver
SPLPL90_0
diode laser power supply melles griot
Melles Griot
4,7uF 50v
R1720
1000X
10UF
2N7002
47UF
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A2 DIODE
Abstract: DIODE 40c 0644 A5 DIODE MONOLITHIC DIODE ARRAYS marking Z4 TVS 200 diode 63-37 A4 marking diode C 12 PH diode DIODE marking A2
Text: TVS Diode Arrays TVS Avalanche Diode Array in a Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC This family of avalanche diode arrays are designed for ESD protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or
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SP0504BAC,
SP0508BAC,
SP0516BAC
178mm
A2 DIODE
DIODE 40c 0644
A5 DIODE
MONOLITHIC DIODE ARRAYS
marking Z4
TVS 200 diode
63-37
A4 marking diode
C 12 PH diode
DIODE marking A2
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TNY255P
Abstract: diode RL205 1N4005 pc817d rl205 diode DIODE 1n4005 BZY97C200 DIODE d2 d8 diode d8 3 BZY97-C200
Text: Diode-CCTM Low Cost Secondary CC Circuit • Uses forward drop of the opto LED U2 below as current limit reference with low cost diode (D8 below) in current path to provide thermal compensation – When combined voltage across D8 and R5 equals the forward voltage drop of the opto
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1N4005
11DQ06
BZY97C200
1N4937
470uF,
1N4148
TNY255P
diode RL205
1N4005
pc817d
rl205 diode
DIODE 1n4005
BZY97C200
DIODE d2 d8
diode d8 3
BZY97-C200
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UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
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UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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SDT05S60
Abstract: SIDC16D60SIC3 C-19200 DSA0037454
Text: SIDC16D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC16D60SIC3
Q67050-A4271A101
SDT05S60
SIDC16D60SIC3
C-19200
DSA0037454
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LT4351
Abstract: Diode 107v
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 694 ORED POWER SUPPLY DEMO CIRCUIT LT4351 DESCRIPTION Demonstration circuit DC694 is an ORed Power Supply Demo Circuit featuring the LT 4351. The demo circuit is intended to allow for 3 diode ORed supplies. Two supplies are ORed with the LT4351 MOSFET Diode-OR Controller while the third uses a Schottky diode for comparison.
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LT4351
DC694
LT4351
Diode 107v
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microswitch 12v bipolar
Abstract: nf710 MRD901 2sa968 emf lm324 inverter sensing circuit speed control of fan motor using LM324 calibration of phototransistor sanyo denki tachometer generator 2N2219A ADM1024ARU
Text: a System Hardware Monitor with Remote Diode Thermal Sensing ADM1024 FEATURES Up to Nine Measurement Channels Inputs Programmable-to-Measure Analog Voltage, Fan Speed or External Temperature External Temperature Measurement with Remote Diode Two Channels
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ADM1024
ADM1024
C00059
24-Lead
RU-24)
microswitch 12v bipolar
nf710
MRD901
2sa968 emf
lm324 inverter sensing circuit
speed control of fan motor using LM324
calibration of phototransistor
sanyo denki tachometer generator
2N2219A
ADM1024ARU
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LL-317
Abstract: laser lens Waitrony 650nm 5mw laser module 650NM laser diode 5mw 10 pin laser diode L-L21 650nm 5mw laser diode laser diode 5mW driver circuit for camera ir module
Text: Waitrony Laser Diode Module No.: WLD-R5MG 1. General Description: Dimensions WLD-R5MG is a red laser diode typically powered at 5mW. This device contains a PIN photo diode to meet the designs of the automatic-feedback-powercontrol circuit and is encapsulated
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650nm)
LL215
LL-317
LL317
LL-317
laser lens
Waitrony
650nm 5mw laser module
650NM laser diode 5mw
10 pin laser diode
L-L21
650nm 5mw laser diode
laser diode 5mW
driver circuit for camera ir module
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CD621215
Abstract: No abstract text available
Text: CD62_ _15 CD67_15_ Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 150 Amperes/1600 Volts Description: CD62 15, CD67 15 SCR/Diode POW-R-BLOK™ Module 150 Amperes/1600 Volts Powerex SCR/Diode Modules are
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Amperes/1600
MAX/10
CD621215
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PDF
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ESC021M-15
Abstract: T151 T760 T930 t1511 A5-51
Text: E S C 021M -15 sa i— K Outline Drawings FAST RECOVERY DIODE Features Dam per diode for high definition TV and high resolution display. Dam per and m odulater diode are jointed in a body. Insulated package by fully molding. m m m & m Connection Diagram
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ESC021M-15
egTS30Â
egTa30g3
eaTS5S35^
l95t/R89
T151
T760
T930
t1511
A5-51
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PDF
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Untitled
Abstract: No abstract text available
Text: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this
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UC1610
UC3610
UC3610
ambient40V
UC1611
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PDF
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BIR-NM23C1
Abstract: 100C
Text: BRIGHT LED ELECTRONICS CORP. INFRARED EMITTING DIODE SPECIFICATION MOBICON Ilectrra ic Components COMMODITY : Side look Package Imfrared Emitting Diode DEVICE NUMBER : BIR-NM23C1 APPLICATIONS • Automatic Control System *Mouse PACKAGE DIMENSIONS 4.5 .177 ±0.1
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BIR-NM23C1
Temperature-25Â
100C
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PDF
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