AN602
Abstract: ca capacitor IRD2 GD Rectifiers 500C BYV255 VT25 diode gp SRD12 St gp 04s
Text: AN602 APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE INTRODUCTION The behavior of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing between diodes connected in parallel. The current in each
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AN602
AN602
ca capacitor
IRD2
GD Rectifiers
500C
BYV255
VT25
diode gp
SRD12
St gp 04s
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3469b
Abstract: Diode catalog 5082-2755 Hewlett-Packard Japan zero bias diode HSCH-5019
Text: All Schottky Diodes are Zero Bias Detectors Application Note 988 Introduction Zero bias detectors with higher forward voltage have better voltage sensitivity. For example, the HSCH-3206 with a forward voltage of about 200 millivolts at 0.1 milliampere is better than the HSCH-5019
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HSCH-3206
HSCH-5019
3469b
Diode catalog
5082-2755
Hewlett-Packard Japan
zero bias diode
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hsch 3486 zero bias schottky diode
Abstract: "zero-bias schottky diode" HSCH-3486 S11 SCHOTTKY diode Microwave detector diodes Microwave detector diodes 18 GHz NKT 90 Zero Bias Small Detector Diodes 5963-0951E HSMS-2850
Text: The Zero Bias Schottky Detector Diode Application Note 969 Introduction Table 1. Forward Voltage Characteristic Since all diodes in this discussion are Schottky diodes, the forward current obeys the equation: I = IS q e nkT ( (V–IRS -1 The ideality factor, n, is close to
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HSMS-8101
HSMS-2850
HSCH-3486
5952-9823E.
5963-0951E
hsch 3486 zero bias schottky diode
"zero-bias schottky diode"
HSCH-3486
S11 SCHOTTKY diode
Microwave detector diodes
Microwave detector diodes 18 GHz
NKT 90
Zero Bias Small Detector Diodes
5963-0951E
HSMS-2850
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hsch 3486 zero bias schottky diode
Abstract: hsch-3486 HSMS-8101 hsms-2850
Text: The Zero Bias Schottky Detector Diode Application Note 969 Introduction Table 1. Forward Voltage Characteristic Since all diodes in this discussion are Schottky diodes, the forward current obeys the equation: I = IS q ( (V–IRS nkT e -1 The ideality factor, n, is close to
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HSMS-8101
HSMS-2850
HSCH-3486
5963-0951E
hsch 3486 zero bias schottky diode
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x band diode detector waveguide
Abstract: detector diode 3469b Diode catalog HSCH-3206 avago krieger HSCH-5019
Text: All Schottky Diodes are Zero Bias Detectors Application Note 988 Introduction Zero bias detectors with higher forward voltage have better voltage sensitivity. For example, the HSCH-3206 with a forward voltage of about 200 millivolts at 0.1 milliampere is better than the HSCH-5019 with a forward
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HSCH-3206
HSCH-5019
x band diode detector waveguide
detector diode
3469b
Diode catalog
HSCH-3206
avago
krieger
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n452 ak
Abstract: toho electronics inc 1N4537 1N454 germanium diode 0Q0017 N452 n314 1N277 1N278
Text: BKC IIT^ÔB 0000331 & • 'T-Ol -07 30E D I NTERNATI ONAL M <r 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 BKC International Electronics Inc. L „ l Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N277 Low forward voltage drop
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T-01-07
1N277
500mA
MIL-S-19500,
n452 ak
toho electronics inc
1N4537
1N454
germanium diode
0Q0017
N452
n314
1N277
1N278
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1N770
Abstract: 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International
Text: IITT^ÛB 0DQQ333 1 3QE D B K C INTERNATIONAL [ 1 4 BKC " International Electronics Inc. L .J X i T - O 3 .-0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N695
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0DQQ333
1N695
500mA
25nded
MIL-S-19500,
1N770
1N910
1N911
1N695
1N695A
1N771
1N771A
1N771B
gold bonded germanium diode
BKC International
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diode 0a47
Abstract: DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95
Text: B K C INTERNATIONAL 30E D • 1 1 7 H 4 3 0000355 ? ■ x iiL lL H - d - . -pOl-OT i 6 Lake Street PO Box 1436 Lawrence. MA 01841 617)681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes TYPE G1607 FEATURES Low forward voltage drop
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117T1Ã
G1607
300mA
MIL-S-19500,
diode 0a47
DIODE OA91
OA95 diode
OA90 diode
oa47 diode
DIODE OA90
OA91 diode
OA1182
0a47
diode germanium oa95
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D3E diode
Abstract: germanium diode gold bonded germanium diode 1N3110 "Germanium diode" 1N3287 1N949 117T 1N3125 1N3287W
Text: B K C INTERNATIONAL 30E D [•■Mi BKC International Electronics Inc. L .,« il X » ■ 0DD033S 5 ■ 1- 0 1-0~7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE
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1N949
500mA
MIL-S-19500,
D3E diode
germanium diode
gold bonded germanium diode
1N3110
"Germanium diode"
1N3287
1N949
117T
1N3125
1N3287W
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germanium diode
Abstract: 1N4523 117T 1N3666 1N3666M1 1N3666M2 1N3769 1N3773 gold bonded germanium diode
Text: 3QE D B K C INTERNATIONAL EN§ IITTTÔB 0000340 •= ■ ¡ ■ ' ^ 0 3 - 0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 BKC International Electronics Inc, Telephone 617) 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE
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1N3666
500mA
500uAyâ
MIL-S-19500,
germanium diode
1N4523
117T
1N3666
1N3666M1
1N3666M2
1N3769
1N3773
gold bonded germanium diode
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37ba
Abstract: DC1500 Series DC1567
Text: GEC P L E S S E Y SEfllCONDS 43E D • 37bflSa5 GQlSflS2 3 ■ PLSB "T -C rf-p -} GaAs Schottky Barrier Mixer Diodes DC1300 Series BEAM LEAD D IO D E S • • • • High cut-off frequency Low noise figure Low total capacitance Robust construction Operating temperature range All types
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37bflSa5
DC1300
DC1306
DC1338/9
DC1346
400mW
250mW
37ba
DC1500 Series
DC1567
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IN5639A
Abstract: diode LT 675 IN 407 IN6053 Zener diode IN5637A in5645a IN6036A IN5650A IN6055A IN6042A in6053a
Text: POWERZORB L13 Series 1.5KW Transient Absorption Zener Diode A range of unipolar Protection diodes in a hermetically sealed metal and glass D013 package. ; 1mS expo P max c o n t-
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varactor diode notes
Abstract: x band varactor diode varactor diode capacitance range CAY10 varactor diode high frequency GHz varactor diode high frequency "Varactor Diode" mullard Parametric Varactor diodes
Text: GALLIUM ARSENIDE VARACTOR DIODE CAYIO TEN TA TIV E DATA Gallium arsenide varactor diode with a high cut-off frequency for use in param etric am plifiers, frequency multipliers and switches. The diodes are of the diffused m esa type and are mounted in a sm all ceramic-metal case
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CAY10
varactor diode notes
x band varactor diode
varactor diode capacitance range
varactor diode high frequency GHz
varactor diode high frequency
"Varactor Diode"
mullard
Parametric Varactor diodes
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1N3483
Abstract: Germanium diode D3E diode 1N3469 gold bonded germanium diode 1N3470 1N34* diode 1N3592
Text: B K C INTERNATIONAL 30E D [•«Ml BKC International Electronics Inc. I-III V » ■ 117^03 GG D G 3 3 T 2. ■ -"pOI-O"/ 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 « TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES
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GGDD33T
1N3469
600mA
100uA
Cto85Â
MIL-S-19500,
1N3483
Germanium diode
D3E diode
1N3469
gold bonded germanium diode
1N3470
1N34* diode
1N3592
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SP126
Abstract: No abstract text available
Text: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt
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OT-23
OT-223
OT-89,
OT-143,
EIA-RS481A
IEC286-3
BB215
PB219
PZT2907A
SP126
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mil-m-28837
Abstract: MCL fREQUENCY mIXERS
Text: Product Testing For High Reliability Ultra-ReP Mini-Circuit's mixers, phase detectors, frequency doublers and limiters are "Ultra-Rel ": They carry a fiveyear guarantee, a reliability breakthrough attributed mainly to unique Ultra-Rel® diodes th at easily m eet
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MIL-STD-883
mil-m-28837
MCL fREQUENCY mIXERS
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DIODE A112
Abstract: No abstract text available
Text: D IO D E M O D U L E DF75BA40/80 UL;E76102 M Power Diode Module D F 7 5 B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri cally isolated from semiconductor elements for simple heatsink
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DF75BA40/80
E76102
75Amp
DF75BA40
DF75BA80
F75BA
DIODE A112
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XLO8
Abstract: diode hp 5082-2080 hp 5082-2830 DOD-HDBK-1686A DOD-HDBK-1686 hp 5082-2900 diode
Text: WhoI H EW L E T T 1 "KM PA CK A R D Tri Metal Beam Lead Schottky Diodes Reliability Data HSCH-5300 Series HSCH-5500 Series Conclusion Hewlett-Packard’s beam lead diodes have successfully passed stringent environmental testing. Hewlett-Packard beam lead diodes may be used in military
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HSCH-5300
HSCH-5500
MIL-STD-750
1051C
DOD-HDBK-1686
XLO8
diode hp 5082-2080
hp 5082-2830
DOD-HDBK-1686A
hp 5082-2900 diode
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 17.7A/100— 200V/trr : 35nsec C16T10F C16T20F C16T20F-11A ° ¡SQUARE - PAK| TO-263AB SMD Packaged in 24mm Tape and Reel : C16T*»F o Tabless T0-220:C16T20F-11A o Dual Diodes — Cathode Common 0 Ultra - Fast Recovery ° Low Forward Voltage Drop
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O-263AB
T0-220
C16T20F-11A
A/100--
00V/trr
35nsec
C16T10F
C16T20F
C16T20F-11A
C16T10F
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5082-2815
Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
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0005fc
1N5711
1N5712
1N5711,
1N5712,
i712-
1n57h
1n5712
5082-2815
5082-2970
5082-2805
5082-2813
5082-2308
5082-2804
diode+hp+2835+schottky
5082-2826
5082-2997
5082-2912
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 17.7A/100— 200V/trr : 35nsec F16P10FS F16P20FS 3.11122 M AX F EATU R ES _ h l.3 i.4 0 5i ° Similar to TO-220AB Case, Fully Molded Isolation ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery MAX5' •‘ 1M6UMAX » Low Forward Voltage Drop
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O-220AB
A/100--
00V/trr
35nsec
F16P10FS
F16P20FS
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F16P10FS
Abstract: F16P20FS H122
Text: FAST RECOVERY DIODE 17.7A/100— 20 0 V /trr : 35nsec F16P10FS F16P20FS 3.K.122 FEATURES °Similar to T0-220AB Case, Fully Molded Isolation " M AX ^ I0 .3 i.4 0 5 ). 3.4 .134)„ ' 3.01.118)^ — Ï— 6.9(.272) 6.3(.248) 2.851.112) 2.551.1001 » Dual Diodes - Cathode Common
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A/100â
00V/trr
35nsec
F16P10FS
F16P20FS
T0-220AB
MAX55'
F16P20FS
H122
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes BYQ28EB series ultrafast, rugged_ _ GENERAL DESCRIPTION Glass passivated dual epitaxial rectifier diodes in a plastic envelope suitable for surface mounting,
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BYQ28EB
OT404
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SRK-12ZB
Abstract: D1JA SRK-12ZBT06 SRK-12ZB - 06 FRO 021 D1K20 microwave oven diode 12zb D4BB 6A05 DIODE
Text: RECTIFIER DIODES SHINDENGEN ELECTRIC MF6 32E D 021=1307 QGaaoib 7 ISHE4_ î] Diodes*for Microwave*Oven*g - 'fef ± nn V rm lo [kV ] [A ] PC] SRK-12ZB T06 7 0.4 50 -12 Z B (T 0 7 ) 8 0.3S 50 -t2 Z B (T 0 9 ) 9 0.35 120* & f* To Typa No. æ: m fê * f I I 5Ê fê
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SRK-12ZB
-12ZB
D4BB10
SRK-12ZB
D1JA
SRK-12ZBT06
SRK-12ZB - 06
FRO 021
D1K20
microwave oven diode
12zb
D4BB
6A05 DIODE
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