Untitled
Abstract: No abstract text available
Text: PQ-60 Analog Diode Phase Shifters Features • Octave bands up to 18 GHz • Fast Phase responce as low as 10 nS • RF power operation 10 mW peak/CW, RF power survival 100 mW peak/CW • Bias connection using pin or connector options • Custom configurations available
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PQ-60
MIL-STD-883,
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SN60
Abstract: J1 DIODE
Text: MSW2040-204, MSW2041-204 SP2T Switch Series, 50 MHz – 4 GHz Datasheet Features • Wide Frequency Range: 50 MHz to 4 GHz, in 2 bands • Surface Mount SP2T Switch in Compact Outline: 8 mm L x 5 mm W x 2.5 mm H • Higher Average Power Handling than Plastic Packaged
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MSW2040-204,
MSW2041-204
MSW2040-204
MSW20formation
SN60
J1 DIODE
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Q62702-A1211
Abstract: No abstract text available
Text: BAR 63-02W Silicon PIN Diode • PIN diode for high speed switching 2 of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance 1 • For frequencies up to 3 GHz VES05991 Type Marking Ordering Code Pin Configuration
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3-02W
VES05991
SCD-80
Q62702-A1211
Sep-07-1998
100MHz
Q62702-A1211
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SMP1307-027
Abstract: pj marking smp1307-011lf SMP1307 SMP1307-001 SMP1307-001LF SMP1307-004 SMP1307-005 SMP1307-011 5.6 SOT-5
Text: DATA SHEET SMP1307 Series: Very Low Distortion Attenuator Plastic Packaged PIN Diodes Features Low distortion design Frequency range from HF to > 2 GHz ● Designed for CATV AGC applications ● Designed for high volume wireless applications ● ● Description
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SMP1307
SMP1307-027
pj marking
smp1307-011lf
SMP1307-001
SMP1307-001LF
SMP1307-004
SMP1307-005
SMP1307-011
5.6 SOT-5
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Pin diode G4S
Abstract: BAR63 BAR63-05 A2 SOT23 BAR63-06 BAR63-04 c2 sot23
Text: BAR63. Silicon PIN Diodes 3 PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance 2 For frequencies up to 3 GHz 1 BAR63-04 BAR63-05 BAR63-06 3 3 3 1 2 1 2 EHA07005 1 VPS05161 2 EHA07006 EHA07004 Type Marking
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BAR63.
BAR63-04
BAR63-05
BAR63-06
VPS05161
EHA07005
EHA07006
EHA07004
Pin diode G4S
BAR63
BAR63-05
A2 SOT23
BAR63-06
BAR63-04
c2 sot23
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BAR64-02V
Abstract: SC79
Text: BAR64-02V Silicon PIN Diode 2 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz up to 3 GHz 1 Low resistance and long carrier lifetime VES05991 Very low capacitance at zero volts reverse bias at frequencies above 1 GHz
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BAR64-02V
VES05991
Aug-28-2001
900MHz
1800MHz
BAR64-02V
SC79
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Pin diode G4S
Abstract: SOT-23 2.D
Text: BAR 63 . Silicon PIN Diodes 3 • PIN diode for high speed switching of RF signals • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63 BAR 63-04 BAR 63-05 1 3 BAR 63-06 3 3 3 1 2 EHA07002 VPS05161 1 2 EHA07005 1
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EHA07002
VPS05161
EHA07005
EHA07006
EHA07004
OT-23
EHB07145
Pin diode G4S
SOT-23 2.D
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rf attenuator soic
Abstract: MA4VAT904-1061T
Text: High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT904-1061T V2 Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc SOIC-8 Surface Mount Package
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MA4VAT904-1061T
MA4VAT904-1061T
rf attenuator soic
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BAT63-07W
Abstract: No abstract text available
Text: BAT63-07W Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz 4 frequencies For high-speed switching applications Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT63-07W
VPS05605
EHA07008
OT343
Jul-06-2001
BAT63-07W
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j6 diode
Abstract: J1 DIODE J3 diode MA4BN1840-1 J2 diode J4 diode
Text: MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 MA4AGSW5 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state
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HBFP-0450
Abstract: 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1
Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz
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HBFP-0450
SC-70
OT-343)
HBFP-0450
5968-5434E
5988-0133EN
35-689
HBFP-0450-BLK
CMP10
CMP12
55 ic Sot-343
HBFP0450TR1
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55332R34-028
Abstract: 5424R29-001
Text: DATA SHEET SKY12207-306LF: 0.9-4.0 GHz 50 W High Power Silicon PIN Diode SPDT Switch Applications • Transmit/receive switching and failsafe switching in TDSCDMA, WiMAX, and LTE base stations • Transmit/receive switching in land mobile radios and military
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SKY12207-306LF:
16-pin,
J-STD-020)
SKY12207-306LF
201517H
55332R34-028
5424R29-001
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SWM-1400
Abstract: No abstract text available
Text: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS SP4T DIODE SWITCH REFLECTIVE MODEL SWM-1400 0.5–18.0 GHz GENERAL INFORMATION The Model SWM-1400 SP4T PIN Diode switch operates over the full frequency range 0.5–18.0 GHz in a single unit. KDI/Triangle has integrated
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SWM-1400
SWM-1400
MIL-STD-883.
SWM-1400A
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Untitled
Abstract: No abstract text available
Text: ONET8541T SLLSE85A – JULY 2011 – REVISED AUGUST 2011 www.ti.com 11.3 Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8541T FEATURES 1 • • • • • • • • • 9 GHz Bandwidth 4 kΩ Differential Small Signal Transimpedance
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ONET8541T
SLLSE85A
-20dBm
OC-192
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915 MHz RFID
Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
Text: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz
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OT-323
SC-70)
HSMS-285A
HSMS-286A
HSMS-285A
5965-8838E
5966-4282E
915 MHz RFID
METAL DETECTOR circuit for make
IC RFID 2.45 GHz
2.45 GHz single chip transmitter
HSMS-2850
HSMS-286C
100A101MCA50
"zero-bias schottky diode"
mark code t4 diode
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frequency doubler balun
Abstract: 10311 Schottky Doubler HMC189MS8 frequency doubler
Text: HMC189MS8 MICROWAVE CORPORATION GaAs MMIC SMT FREQUENCY DOUBLER 2.0 - 4.0 GHz INPUT FEBRUARY 2001 Features General Description CONVERSION LOSS: 13 dB The HMC189MS8 is a miniature passive frequency doubler in a plastic 8-lead MSOP package. The suppression of the undesired
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HMC189MS8
HMC189MS8
frequency doubler balun
10311
Schottky Doubler
frequency doubler
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IC 741 OPAMP DATASHEET
Abstract: datasheet opamp 741 enamelled copper wire swg table IC 741 based colpitts oscillator construction BFR84 BF981 FET BFR84 pin out 741 opamp pictures of lm358 pin configuration transistor BC547 2N2222
Text: A 10 MHz Reference Oscillator Keith Gooley VK5OQ A quartz crystal oscillator in a temperature stabilised enclosure to be used as a reference for a counter or narrow-band mode receiver or transmitter at UHF/SHF The need for this reference arose in my shack when I was using a 1 GHz counter
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Untitled
Abstract: No abstract text available
Text: AMMP-6545 18 to 40 GHz GaAs MMIC Sub-Harmonic Mixer in SMT Package Data Sheet Description Features Avago’s AMMP-6545 is an easy-to-use broadband sub-harmonic mixer, with the LO injected at half the frequency of that required by a conventional mixer. MMIC includes an 180° balanced diode based mixer.
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AMMP-6545
AMMP-6545
AMMP-6545-BLKG
AMMP-6545-TR1G
AMMP-6545-TR2G
AV02-0251EN
AV02-1382EN
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Untitled
Abstract: No abstract text available
Text: ONET8521T SLLSE87A – JULY 2011 – REVISED AUGUST 2011 www.ti.com 11.3 Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8521T FEATURES 1 • • • • • • • • • 9 GHz Bandwidth 2.4 kΩ Differential Small Signal Transimpedance
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ONET8521T
SLLSE87A
-20dBm
OC-192
ONET8521T
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transistor s parameters noise
Abstract: BF 145 transistor
Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 For medium power amplifiers 4 Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2 Transition frequency f T = 24 GHz Gold metallization for high reliability
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VPS05605
OT-343
50Ohm
-j100
Mar-07-2001
transistor s parameters noise
BF 145 transistor
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UM4300
Abstract: UM4301 microsemi sm package UM4302 UM4306 UM4310 UM7300 UM7301 UM7302 UM7306
Text: UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S KEY FEATURES DESCRIPTION series offers lower capacitance. Both diode series are intended for use in linear attenuators operating from HF to beyond 1 GHz. Low distortion is a result of transit time frequencies below 5 MHz.
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UM4300
UM7300
UM4300
UM7300
UM4301
microsemi sm package
UM4302
UM4306
UM4310
UM7301
UM7302
UM7306
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Q62702-F1590
Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability
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VPS05605
Q62702-F1590
OT-343
50Ohm
-j100
Sep-09-1998
Q62702-F1590
5198 transistor equivalent
Transistor C 5198
VPS05605
transistor BI 342 746
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powerpc 7447a
Abstract: TEA 2822 M 5387B TT 2076 G38-87 JESD51-2 PC7447 PC7447A PC7400
Text: Features • • • • • • • • • • • • • • • 3000 Dhrystone 2.1 MIPS at 1.3 GHz Selectable Bus Clock 30 CPU Bus Dividers up to 28x Selectable MPx/60x Interface Voltage (1.8V, 2.5V) PD Typically 18W at 1.33 GHz at VDD = 1.3V; 8.0W at 1 GHz at VDD = 1.1V
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MPx/60x
64-bit
36-bit
Hz/166
5387B
powerpc 7447a
TEA 2822 M
TT 2076
G38-87
JESD51-2
PC7447
PC7447A
PC7400
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PDF
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A115
Abstract: C101 JESD22 LMV221 LMV221SD LMV221SDX antenna CDMA GPRS
Text: LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA General Description Features The LMV221 is a 40 dB RF power detector intended for use in CDMA and WCDMA applications. The device has an RF frequency range from 50 MHz to 3.5 GHz. It provides an accurate temperature and supply compensated output voltage
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LMV221
LMV221
A115
C101
JESD22
LMV221SD
LMV221SDX
antenna CDMA GPRS
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