PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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marking code PH 200
Abstract: BAV70WS
Text: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current
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BAV70WS
OD-323
OD-323
marking code PH 200
BAV70WS
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b1443
Abstract: 455 KHz 34943 UM9552 UM9552S 8 PIN pin diode attenuator TCVF 455 khz if variable
Text: 580 Pleasant St. Watertown, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 UM9552 Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 µ s typ.) Very Low Distortion (IP3 @ 455 KHz = < 60 dBm) Description
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UM9552
UM9552
Intermodulat52
MSCO867B
b1443
455 KHz
34943
UM9552S
8 PIN pin diode attenuator
TCVF
455 khz if variable
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ID100
Abstract: MSAFX76N07A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features • • • • • • • 70 Volts 76 Amps 12 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX76N07A
ID100
MSAFX76N07A
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34036
Abstract: ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 HUM2010 HUM2015 HUM2020 Features • • • • • • PIN DIODE HIGH POWER STUD High Power Stud Mount Package High Zero Bias Impedance Very Low Inductance and Capacitance No Internal Lead Straps
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HUM2010
HUM2015
HUM2020
perfUM9552
HUM2010,
34036
ph c13 diode
HUM2010
HUM2015
HUM2020
UM9552
diode mri power
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features • • • • • • • 70 Volts 76 Amps 12 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX76N07A
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Untitled
Abstract: No abstract text available
Text: 1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: PH Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current
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1SS301CCW
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAER12N50A
MSAFR12N50A
Drain300
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ID100
Abstract: MSAER12N50A MSAFR12N50A DT4812
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAER12N50A
MSAFR12N50A
ID100
MSAER12N50A
MSAFR12N50A
DT4812
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ID100
Abstract: MSAFX10N90A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features 900 Volts 10 Amps 1.1 Ω • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX10N90A
ID100
MSAFX10N90A
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MSC0266
Abstract: ID100 MSAER12N50A MSAFR12N50A uA555
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure
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MSAER12N50A
MSAFR12N50A
MSC0266
ID100
MSAER12N50A
MSAFR12N50A
uA555
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features • • • • • • • 900 Volts 10 Amps 1.1 Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX10N90A
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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Untitled
Abstract: No abstract text available
Text: mamor ME701202 ME701602 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Tht&G-PhäSG Diode Bridge Modules 20 Amperes/1200-1600 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three phase bridge applica
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ME701202
ME701602
Amperes/1200-1600
ME701202,
677att
72T4bBl
000AS4fl
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BAS86
Abstract: No abstract text available
Text: •I bbS3S3I, GOSMSlfl 4b3 H A P X N AMER PH ILIPS/DISCRETE BAS86 b7E T> SCHOTTKY BARRIER DIODE Schottky Barrier diode with an integrated protection ring against extremely high static discharges. This diode, in a SOD 8 OC envelope, is intended for applications where a very low forward voltage is
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BAS86
10fiA
100i2;
002H320
BAS86
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BUK637-500B
Abstract: No abstract text available
Text: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode
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BUK637-500B
BUK637-500B
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diode DB 3 C
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm O PTICA L FIB ER COM M UN ICATION S InG aA sP PH A SE-SH IFTED D FB-D C-PBH LA SER DIODE M ODULE DESCRIPTION NDL5653P ¡s a 1550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola
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NDL5653P
L5653P
diode DB 3 C
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BAT85
Abstract: BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p
Text: SbE D 711DÛ2b □ 0 M G 2 4 ti DTÖ • PH I N Product specification Philips Semiconductors T-i I -or BAT85 Schottky barrier diode P H I LI P S international DESCRIPTION SbE D QUICK REFERENCE DATA A Schottky barrier diode with an integrated protection ring against
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DO-34)
BAT85
711002b
BAT85 sot
PHILIPS DIODE
philips Schottky diode
MARKING 12p
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thermistor 054
Abstract: No abstract text available
Text: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N
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b42752S
NDL5853P,
NDL5853PA
NDL5853P
NDL5853PA
b427525
NPLS853P,
WPL58S3PÀ
thermistor 054
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Untitled
Abstract: No abstract text available
Text: Microsemi h Watertown, MA 580 Pleasant St. W atertow n, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 m Progress P ow ered b y Technology Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 us typ.)
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UM9552
UM9552
MSC0867B
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OP266W
Abstract: OP506W
Text: 0.OPIEK Product Bulletin OP266W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP266W -Il* * WBBBBSm. iiipllBI8 8 M I pH • FOR IDENTIFICATION PURPOSES. CATHODE LEAD IS .060 (1.52 NOM SHORTER THAN ANODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS)
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OP266W
OP266W
OP506W
OP506W
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SUS CIRCUIT breakover device
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SbE D 711DÖ 5b D D 41D74 3?T • ph : BR216 T -II-2 3 DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a
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41D74
BR216
BR216
T0-220AB
T-ll-23
SUS CIRCUIT breakover device
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Untitled
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA M 2830 S. Fairview St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX24N50A
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Untitled
Abstract: No abstract text available
Text: Micnosemi H m m Santa Ana, CA Progress Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode
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MSAFX11P50A
MSAFX24N50A
MSC0308A
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