CY8C27466
Abstract: CY8C27566 CY8C27666 DBB10 DSA00249634.txt
Text: PSoC Mixed Signal Array Preliminary Data Sheet CY8C27466, CY8C27566, and CY8C27666 Features • Powerful Harvard Architecture Processor ❐ M8C Processor Speeds to 24 MHz ❐ Two 8x8 Multiply, 32-Bit Accumulate ❐ Low Power at High Speed ❐ 3.0 to 5.25 V Operating Voltage
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CY8C27466,
CY8C27566,
CY8C27666
32-Bit
14-Bit
CY8C27466
CY8C27566
CY8C27666
DBB10
DSA00249634.txt
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Untitled
Abstract: No abstract text available
Text: PSoC Mixed Signal Array Preliminary Data Sheet CY8C29466, CY8C29566, CY8C29666, and CY8C29866 Features • Powerful Harvard Architecture Processor ❐ M8C Processor Speeds to 24 MHz ❐ Two 8x8 Multiply, 32-Bit Accumulate ❐ Low Power at High Speed ❐ 3.0 to 5.25 V Operating Voltage
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CY8C29466,
CY8C29566,
CY8C29666,
CY8C29866
32-Bit
14-Bit
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CY8C27466
Abstract: CY8C27566 CY8C27666 DBB10 inductor 100 micro henry
Text: PSoC Mixed Signal Array Preliminary Data Sheet CY8C27466, CY8C27566, and CY8C27666 Features • Powerful Harvard Architecture Processor ❐ M8C Processor Speeds to 24 MHz ❐ Two 8x8 Multiply, 32-Bit Accumulate ❐ Low Power at High Speed ❐ 3.0 to 5.25 V Operating Voltage
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CY8C27466,
CY8C27566,
CY8C27666
32-Bit
14-Bit
CY8C27466
CY8C27566
CY8C27666
DBB10
inductor 100 micro henry
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three phase wattmeter connections
Abstract: DIODE SMD 1206 E4622-X503 operation of 3 Phase wattmeter digital wattmeter circuit single phase SFR05 figure of three phase wattmeter 1N4148 SOD323 AN3157 SMD ZENER DIODE E1
Text: AN3157 Application note STEVAL-IPE010V1 poly-phase demonstration kit for the STPMC1 and STPMS1 Introduction This application note describes the STEVAL-IPE010V1 poly-phase demonstration kit for the STPMC1 and STPMS1.The STPMC1 is a metering ASSP implemented through an
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AN3157
STEVAL-IPE010V1
three phase wattmeter connections
DIODE SMD 1206
E4622-X503
operation of 3 Phase wattmeter
digital wattmeter circuit single phase
SFR05
figure of three phase wattmeter
1N4148 SOD323
AN3157
SMD ZENER DIODE E1
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zener DIODE 1N5228
Abstract: C5359 VR3 Voltage Regulators RN519 1n2907 C9 0.1uf 200v db37 connector 3.9V ZENER DIODE diode zener c72 C100
Text: 19-1152; Rev 0; 10/96 MAX1114/MAX1125 Evaluation Kit The MAX1114/MAX1125 Evaluation Kit EV kit is a tool for the evaluation and characterization of the MAX1114 (150MHz) or MAX1125 (300MHz) analog-to-digital converters (ADCs). The evaluation board’s dimensions are 7.562" x 8.125".
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MAX1114/MAX1125
MAX1114
150MHz)
MAX1125
300MHz)
150MHz/300MHz
MAX1114
MAX1125
zener DIODE 1N5228
C5359
VR3 Voltage Regulators
RN519
1n2907
C9 0.1uf 200v
db37 connector
3.9V ZENER DIODE
diode zener c72
C100
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SMD F5 DIODE
Abstract: SMD ZENER DIODE f2 Diode smd f2 smd diode F6 SMD F6 DIODE SMD F5 zener DIODE SMD F1 zener DIODE DIODE F7 SMD Diode smd f6 smd zener diode 6v
Text: SMD Zener Diode SMD Diodes Specialist CZRF2V4B Thru CZRF39VB Voltage 2.4 to 39 Volts Power 200 mWatts 1005 2512 Features 0.102(2.60) 0.095(2.40) 200mW Power Dissipation. High Voltages from 2.4 ~ 39 V. 0.051(1.30) 0.043(1.10) Designed for mounting on small surface.
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CZRF39VB
200mW
MIL-STD-750
F/1005
QW-A2003
SMD F5 DIODE
SMD ZENER DIODE f2
Diode smd f2
smd diode F6
SMD F6 DIODE
SMD F5 zener DIODE
SMD F1 zener DIODE
DIODE F7 SMD
Diode smd f6
smd zener diode 6v
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DIODE F7 SMD
Abstract: Diode smd f2 SMD F6 DIODE f2 diode smd SMD F5 DIODE SMD ZENER DIODE f2 SMD diode f9 smd zener diode 5v SMD F1 zener DIODE smd diode F6
Text: SMD Zener Diode SMD Diodes Specialist CZRF2V4B Thru CZRF39VB RoHS Device Voltage 2.4 to 39 Volts Power 200 mWatts 1005(2512) Features 0.102(2.60) 0.095(2.40) 200mW Power Dissipation. High Voltages from 2.4 ~ 39 V. 0.051(1.30) 0.043(1.10) Designed for mounting on small surface.
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CZRF39VB
200mW
MIL-STD-750
F/1005
QW-A2003
DIODE F7 SMD
Diode smd f2
SMD F6 DIODE
f2 diode smd
SMD F5 DIODE
SMD ZENER DIODE f2
SMD diode f9
smd zener diode 5v
SMD F1 zener DIODE
smd diode F6
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FDS6680S
Abstract: CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S FDS6984S L86Z
Text: FDS6984S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages
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FDS6984S
FDS6984S
FDS6680S
CBVK741B019
F011
F63TNR
F852
FDS6690A
FDS6690S
L86Z
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t7805ct
Abstract: T7805CT fixed voltage regulator T7805 a1024 transistor 7805 smd ua723 100n J63 TL431 SMD 595D smd diode K2 3N
Text: APPLICATION NOTE TDA8766G EVALUATION BOARD DOCUMENTATION AN96012 Philips Semiconductors TDA8766G Evaluation board documentation Application Note AN96012 APPLICATION NOTE TDA8766G EVALUATION BOARD DOCUMENTATION Author : Stéphane DESPROGES Application Laboratory - Paris
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TDA8766G
AN96012
TDA8766G
t7805ct
T7805CT fixed voltage regulator
T7805
a1024 transistor
7805 smd
ua723
100n J63
TL431 SMD
595D
smd diode K2 3N
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12V, 1W zener diode
Abstract: MC68HC16Z1CFC16 IC3 7805 RAM 62256
Text: 19-1322; Rev 0; 10/97 MAX125/MAX126 Evaluation Systems/Evaluation Kits The MAX125/MAX126 evaluation systems EV systems consist of a MAX125/MAX126 evaluation kit (EV kit) and a Maxim 68HC16MOD-16WIDE microcontroller (µC) module. The MAX125/MAX126 are high-speed, 8-channel, 14-bit data-acquisition systems with four simultaneous track/holds. Windows 3.1 /Windows 95™ software
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MAX125/MAX126
68HC16MOD-16WIDE
14-bit
68HC16MOD-16WIDE)
12V, 1W zener diode
MC68HC16Z1CFC16
IC3 7805
RAM 62256
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SO8 package fairchild
Abstract: fd303 f852
Text: August 1999 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The
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FDFS6N303
SO8 package fairchild
fd303
f852
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12V, 1W zener diode
Abstract: 27c256 Ram 10K SIP Resistor IN4742A MC68HC16Z1CFC16 68HC16MOD-16WIDE MAX125 MAX125EVB16 1n4742a 12v MAX126
Text: 19-1322; Rev 0; 10/97 MAX125/MAX126 Evaluation Systems/Evaluation Kits The MAX125/MAX126 evaluation systems EV systems consist of a MAX125/MAX126 evaluation kit (EV kit) and a Maxim 68HC16MOD-16WIDE microcontroller (µC) module. The MAX125/MAX126 are high-speed, 8-channel, 14-bit data-acquisition systems with four simultaneous track/holds. Windows 3.1 /Windows 95™ software
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MAX125/MAX126
68HC16MOD-16WIDE
14-bit
68HC16MOD-16WIDE)
68HC16MOD-16WIDE
12V, 1W zener diode
27c256 Ram
10K SIP Resistor
IN4742A
MC68HC16Z1CFC16
MAX125
MAX125EVB16
1n4742a 12v
MAX126
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12V, 1W zener diode
Abstract: 10K SIP Resistor IN4742A MC68HC16Z1CFC16 78M05 pinout 62256 RAM diode u2 a05 MC68HC16Z1CFC16 DATA SHEET pinout diode zener B16 IC3 7805
Text: 19-1322; Rev 0; 10/97 MAX125/MAX126 Evaluation Systems/Evaluation Kits The MAX125/MAX126 evaluation systems EV systems consist of a MAX125/MAX126 evaluation kit (EV kit) and a Maxim 68HC16MOD-16WIDE microcontroller (µC) module. The MAX125/MAX126 are high-speed, 8-channel, 14-bit data-acquisition systems with four simultaneous track/holds. Windows 3.1 /Windows 95™ software
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MAX125/MAX126
68HC16MOD-16WIDE
14-bit
68HC16MOD-16WIDE)
68HC16MOD-16WIDE
12V, 1W zener diode
10K SIP Resistor
IN4742A
MC68HC16Z1CFC16
78M05 pinout
62256 RAM
diode u2 a05
MC68HC16Z1CFC16 DATA SHEET pinout
diode zener B16
IC3 7805
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DIODE AA 119
Abstract: AA MARKING CODE SO8
Text: FDS6690S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690S
FDS6690S
FDS6690
DIODE AA 119
AA MARKING CODE SO8
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AA MARKING CODE SO8
Abstract: No abstract text available
Text: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6680S
FDS6680S
FDS6680
AA MARKING CODE SO8
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a7840
Abstract: fdfs6n303
Text: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductors FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and
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FDFS6N303
a7840
fdfs6n303
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2P102
Abstract: F011 F63TNR F852 FDFS2P102 L86Z
Text: August 1999 FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.47V Schottky diode into a single surface mount power package. The
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FDFS2P102
2P102
F011
F63TNR
F852
FDFS2P102
L86Z
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fdfs6n303
Abstract: F011 F63TNR F852 L86Z SOIC-16
Text: January 2000 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.
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FDFS6N303
050lopment.
fdfs6n303
F011
F63TNR
F852
L86Z
SOIC-16
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6680S FDS6690A FDS6690S FDS9953A L86Z
Text: FDS6690S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690S
FDS6690S
FDS6690A
CBVK741B019
F011
F63TNR
F852
FDS6680S
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6680S FDS6690A FDS6690S FDS9953A L86Z
Text: FDS6690S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690S
FDS6690S
FDS6690A
CBVK741B019
F011
F63TNR
F852
FDS6680S
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6680 FDS6680S FDS9953A L86Z
Text: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6680S
FDS6680S
FDS6680
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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remote control car circuit diagram
Abstract: AUTO MUTe AUDIO deck car circuit car radio philips RDS EON AM FM TUNER module car CCR520 TEA6100 old fm radio diagram TDA1526 how remote control car work Remote Control in play car
Text: APPLICATION NOTE Outline Specification of High-End RDS/EON Car Radio System CCR520S V2.6 AN96022 Philips Semiconductors Outline Specification of High-End RDS/EON Car Radio System CCR520S (V2.6) Application Note 96022 Abstract CCR520 is a computer controlled high-end AM/FM car radio system with RDS/RBDS decoding. It is based on a
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CCR520S
AN96022
CCR520
P83CE528)
remote control car circuit diagram
AUTO MUTe AUDIO deck car circuit
car radio philips RDS EON
AM FM TUNER module car
TEA6100
old fm radio diagram
TDA1526
how remote control car work
Remote Control in play car
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6670A FDS6670S FDS9953A L86Z
Text: FDS6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6670S
FDS6670S
CBVK741B019
F011
F63TNR
F852
FDS6670A
FDS9953A
L86Z
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TK512CB
Abstract: TK512 Tektronix schematic
Text: TEKTRONIX INC/ INTEGRATED SIE » H aiQblSH DODOlbb S il T -¥ /S 5 T r i / ! C r \ INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES SPECIFICATIONS } OPERATINGINFORMATION ] m Front Illuminated or 13 m m M @ 1 m m thinned back Illuminated Large area format: §12 X
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OCR Scan
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PDF
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TK512
TK512CB
Tektronix schematic
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