to-can
Abstract: laser diode submount 650nm 5mw laser laser diode chip 650NM laser diode 5mw DIODE CHIP
Text: U-CS-6505021 UNION OPTRONICS CORP. 650nm Laser Diode chip on Submount 650nm Red Laser Diode Chip on Submount U-CS-6505021 Descriptions Features 650nm Laser Diode Chip on Submount Un-cooled Laser chip on submount with MQW structure Gold coated copper submount
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U-CS-6505021
650nm
to-can
laser diode submount
650nm 5mw laser
laser diode chip
650NM laser diode 5mw
DIODE CHIP
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Untitled
Abstract: No abstract text available
Text: TSHF5400 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted plastic
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TSHF5400
TSHF5400
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSHF5200 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted
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TSHF5200
TSHF5200
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current
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BAW56LT1
236AB)
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BAW56LT1
Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current
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BAW56LT1
r14525
BAW56LT1/D
BAW56LT1
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Untitled
Abstract: No abstract text available
Text: TSHF5400 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted plastic
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TSHF5400
TSHF5400
D-74025
08-Mar-05
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TSHF5200
Abstract: No abstract text available
Text: TSHF5200 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded on copper frame, in a clear, untinted
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TSHF5200
TSHF5200
D-74025
08-Mar-05
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BAW56LT1
Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode Common Anode BAW56LT1 ON Semiconductor Preferred Device MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current
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BAW56LT1
r14525
BAW56LT1/D
BAW56LT1
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W66ESF002X13
Abstract: generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099
Text: APPLICATION NOTE Diode modulator for linear zoom. AN96099 Philips Semiconductors Diode modulator for linear zoom. Application Note AN96099 Abstract A short description is given on the existing diode modulator functioning and the changes which have to be made
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AN96099
W66ESF002X13
generators winding circuit diagrams
EHT COIL
EHT COIL transformer
W66ESF
335NF
circuit diagram of pulse position modulator
DSADA0016983
AN96099
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MMBD7000LT1
Abstract: M5C 3 leads
Text: ON Semiconductort Dual Switching Diode MMBD7000LT1 ON Semiconductor Preferred Device 1 ANODE 3 CATHODE/ANODE 2 CATHODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol
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MMBD7000LT1
236AB)
r14525
MMBD7000LT1/D
MMBD7000LT1
M5C 3 leads
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TSHF5400
Abstract: No abstract text available
Text: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
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TSHF5400
TSHF5400
D-74025
24-Jun-03
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Untitled
Abstract: No abstract text available
Text: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
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TSHF5400
TSHF5400
D-74025
04-May-04
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Untitled
Abstract: No abstract text available
Text: TSHF5200 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted
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TSHF5200
TSHF5200
D-74025
04-May-04
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Untitled
Abstract: No abstract text available
Text: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
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TSHF5400
TSHF5400
D-74025
04-May-04
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TSAL7600
Abstract: No abstract text available
Text: TSAL7600 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs
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TSAL7600
TSAL7600
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
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TSHF5400
TSHF5400
D-74025
23-Jun-04
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN774E ON Semiconductor DATA SHEET SVC251SPA Diffused Junction Type Silicon Diode Varactor Diode for AFC, CB PLL Features • • • The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology.
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EN774E
SVC251SPA
SVC251SPA
SVC251SPA/D
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Untitled
Abstract: No abstract text available
Text: TSHF5400 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package 94 8390 Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
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TSHF5400
TSHF5400
D-74025
10-Oct-02
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TSAL5300
Abstract: No abstract text available
Text: TSAL5300 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs
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TSAL5300
TSAL5300
D-74025
20-May-99
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TSAL7400
Abstract: diode SR 310
Text: TSAL7400 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs
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TSAL7400
TSAL7400
D-74025
20-May-99
diode SR 310
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TSHF5400
Abstract: No abstract text available
Text: TSHF5400 Vishay Semiconductors ¾ High Speed IR Emitting Diode in ø 5 mm T–1 Package Description 94 8390 TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
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TSHF5400
TSHF5400
D-74025
02-Aug-99
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BAS116LT1
Abstract: BAS116LT3
Text: ON Semiconductort Switching Diode BAS116LT1 This switching diode has the following features: ON Semiconductor Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel
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BAS116LT1
BAS116LT1
BAS116LT3
inch/10
236AB)
r14525
BAS116LT1/D
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TSAL7300
Abstract: No abstract text available
Text: TSAL7300 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs
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TSAL7300
TSAL7300
D-74025
20-May-99
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solder joint
Abstract: PNC0106A stencil tension
Text: AND8455/D Board Level Application Note for SOD-923 Two Pin Diode Package Prepared by: Steve St. Germain ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction Board Mounting Process ON Semiconductor’s SOD-923 represents the latest in small surface mount two pin Diode package technology.
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AND8455/D
OD-923
solder joint
PNC0106A
stencil tension
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