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    DIODE NXP MARKING CODE N1 Search Results

    DIODE NXP MARKING CODE N1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE NXP MARKING CODE N1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NXP date code marking

    Abstract: No abstract text available
    Text: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits  Low diode capacitance  Low diode forward resistance


    Original     		BAP50LX OD882D sym006 BAP50LX DFN1006D-2 NXP date code marking PDF

    diode NXP marking code N1

    Abstract: SOD882D
    Text: 006 D-2 BB173LX DF N1 VHF variable capacitance diode Rev. 1 — 25 March 2013 Product data sheet 1. Product profile 1.1 General description The BB173LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.


    Original     		BB173LX BB173LX OD882D DFN1006D-2) sym008 diode NXP marking code N1 SOD882D PDF

    diode NXP marking code N1

    Abstract: No abstract text available
    Text: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.


    Original     		BB174LX BB174LX OD882D DFN1006D-2) sym008 diode NXP marking code N1 PDF

    NXP date code marking

    Abstract: marking nxp package SOD882D a/BAP1321LX
    Text: 006 D-2 BAP1321LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits       High voltage, current controlled


    Original     		BAP1321LX OD882D sym006 NXP date code marking marking nxp package SOD882D a/BAP1321LX PDF

    Untitled

    Abstract: No abstract text available
    Text: 006 D-2 BAP142LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor


    Original     		BAP142LX OD882D sym006 BAP142LX DFN100. PDF

    NXP date code marking

    Abstract: marking nxp package nxp marking code
    Text: 006 D-2 BAP63LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals


    Original     		BAP63LX OD882D sym006 BAP63LX OD882 NXP date code marking marking nxp package nxp marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: 006 D-2 BAP65LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled


    Original     		BAP65LX OD882D sym006 PDF

    Untitled

    Abstract: No abstract text available
    Text: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 4 — 16 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor for RF attenuators and switches


    Original     		BAP64LX OD882D sym006 PDF

    marking nxp package

    Abstract: NXP SMD diode MARKING CODE
    Text: 006 D-2 BAP51LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals


    Original     		BAP51LX OD882D sym006 BAP51LX OD882 marking nxp package NXP SMD diode MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor for RF attenuators and switches


    Original     		BAP64LX OD882D sym006 PDF

    Untitled

    Abstract: No abstract text available
    Text: 006 D-2 BAP55LX DF N1 Silicon PIN diode Rev. 4 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals


    Original     		BAP55LX OD882D sym006 BAP55LX OD882 PDF

    Untitled

    Abstract: No abstract text available
    Text: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device


    Original     		DFN1006D-2 OD882D) PDF

    DFN1006D-2

    Abstract: diode marking code cz
    Text: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device


    Original     		DFN1006D-2 OD882D) DFN1006D-2 diode marking code cz PDF

    Untitled

    Abstract: No abstract text available
    Text: 006 D-2 PESD5V0F1BRLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 30 January 2014 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device


    Original     		DFN1006D-2 OD882D) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB360ENEA DFN1010D-3 OT1215) AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 60 8D -2 PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier 10 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small


    Original     		PMEG2020EPK DFN1608D-2 OD1608) AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 60 8D -2 PMEG4020EPK 40 V, 2 A low VF MEGA Schottky barrier rectifier 11 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small


    Original     		PMEG4020EPK DFN1608D-2 OD1608) AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB56EN DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB75UPE DFN1010D-3 OT1215) PDF

    NXP date code marking

    Abstract: a/NXP date code marking
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB65UPE DFN1010D-3 OT1215) NXP date code marking a/NXP date code marking PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB65UPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB75UPE DFN1010D-3 OT1215) PDF

    MOSFET TRANSISTOR SMD MARKING CODE 11

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB75UPE DFN1010D-3 OT1215) PDF