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    DIODE MFW Search Results

    DIODE MFW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MFW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vx marking sot23-6

    Abstract: No abstract text available
    Text: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection Pb RoHS GREEN SP724 Lead-Free/Green Series Description  


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    PDF SP724 SP724 OT-23 OT23-6 180mm EIA-481 vx marking sot23-6

    marking 724G

    Abstract: specifications of scr rating package marking 724g 724G marking 3FW sot-23 specifications of scr diode vx marking sot23-6 SOT23-6 Marking .64 SP724 diode array
    Text: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection Pb RoHS GREEN SP724 Lead-Free/Green Series Description  


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    PDF SP724 SP724 OT-23 OT23-6 180mm EIA-481 marking 724G specifications of scr rating package marking 724g 724G marking 3FW sot-23 specifications of scr diode vx marking sot23-6 SOT23-6 Marking .64 diode array

    specifications of scr rating

    Abstract: overvoltage protection scr 5 08 SP725 high current scr
    Text: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection RoHS Pb SP725 Lead-Free/Green Series GREEN Description  & 


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    PDF SP725 SP725 specifications of scr rating overvoltage protection scr 5 08 high current scr

    Diode marking MFW

    Abstract: Diode sot23 marking MFW sot23 marking MFW MFW 17 SOT23 sot-23 marking MFW 09 MFW SOT23 sot23 mfw MFW diode MFW SOT23 MARKING sod-323 Marking OK
    Text: SDlOlAW . . s SDIOICW Silicon Schottky Barrier Diodes for general purpose applications The SD101 W Series IS a metal on sillcon Schottky barrrer device which IS protected by a PN junction guard ring T h e low forward voltage <!ryp and fast swrtching make It ideal


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    PDF SD101 BAS70. BAS70-06 BAS70 BAS70-04 OT-23 BAS70-05 BAS70-06 Diode marking MFW Diode sot23 marking MFW sot23 marking MFW MFW 17 SOT23 sot-23 marking MFW 09 MFW SOT23 sot23 mfw MFW diode MFW SOT23 MARKING sod-323 Marking OK

    thd6924

    Abstract: mfw transistor 2N4033 common collector opto 28V DC aerospace generator transistor 2N4033 1N4148 2N3019 2N3904 FM704A
    Text: Application Note - Interpoint Crane Aerospace & Electronics Power Solutions Inhibit and Synchronization Crane Aerospace & Electronics Power Solutions Inhibit and Synchronization Application Note Although the concepts stated are universal, this application note was written specifically for Interpoint products.


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    diac triac control 230V 5a

    Abstract: working of fuse tube light by 4 diode SCR S6025L quadrac SOT953 BT 136 TRIAC electronics circuits 500w inverter circuits METAL HALIDE 400W VARISTOR 275 K20 VARISTOR 275 LA 20A
    Text: CIRCUIT PROTECTION SOLUTIONS Electronics Circuit Protection Product Selection Guide A guide to selecting Littelfuse circuit protection components for electronic applications. Broadest and Deepest Portfolio of Product Backed by Unparalleled Circuit Protection


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    PDF EC102 EC1102v1E0905 diac triac control 230V 5a working of fuse tube light by 4 diode SCR S6025L quadrac SOT953 BT 136 TRIAC electronics circuits 500w inverter circuits METAL HALIDE 400W VARISTOR 275 K20 VARISTOR 275 LA 20A

    MFW 17 SOT23

    Abstract: MFW SOT23 MFW 17 Transistor mfw 17 369A-13 AN569 MTD2N40E MFW diode MFW SOT mfw sot-23
    Text: MOTOROLA SEMICONDUCTOR w TECHNICAL Order this document by MTD2N40WD DATA Designer5TM Data Sheet TMOS E-FET TM . . High Energy Power FET DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche and switch efficiently. This


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    PDF MTD2N40WD 2W609 MFW 17 SOT23 MFW SOT23 MFW 17 Transistor mfw 17 369A-13 AN569 MTD2N40E MFW diode MFW SOT mfw sot-23

    jcfr

    Abstract: No abstract text available
    Text: n 9+jf+j;&B O U T L I N E D I M E N S I O N S Case 1 1Z Type SlZBO 6 0 0 V 0.8A ,_ 4.7 + 0 2 h c,1.5 . 0 n 7\1A\ *_ 3.8 + 0 2 c, _ - -1.5 IO 2 z#$$!? RATINGS $f$f$sA;I”@ 4 Absolute Item Maximum 3 rJ 7; I1 j’{, 1’; I I ItI ~1111. i Tj Temperature Reverse Voltage


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    PDF SlZB20 SlZB60 jcfr

    11708a

    Abstract: N1913A E9300B N191xA-908 Diode Sensors W8486A 11730A E9304A N8481 N8481A
    Text: Agilent N1913A and N1914A EPM Series Power Meters Consistent results and greater capability Data Sheet ‘—‘`Ul!c‘— E3ogE—goŽE—3ogycE¦9—`™—)E3ogE‘— goŽE—<`NO3¢c™—™o—g!bE—N!‘™9—!33¢Ž!™E—yo¥EŽ— gE!‘¢ŽEgEl™‘~—oŽ—§E!Ž‘9—§o¢‹¤E—<EyEl<E<—


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    PDF N1913A N1914A N1914A N1913A/14A CDMA2000 11a/b/g 5990-4019EN 11708a E9300B N191xA-908 Diode Sensors W8486A 11730A E9304A N8481 N8481A

    design smps 500 watt TL494

    Abstract: 600 watt uc3844 smps schematic UC3842 smps design with TL431 250 watt uc3844 smps schematic MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 p6n60e MC34063 Boost MOSFET uc3844 smps power supply mc34063 step up with mosfet transformer orega 40346
    Text: SWITCHMODE t Power Supplies Reference Manual and Design Guide SMPSRM/D Rev. 0, 5/1999 SMPSRM Mfax is a trademark of Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation


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    10FWJ2CZ47M

    Abstract: No abstract text available
    Text: T O S H IB A 10FWJ2CZ47M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE mFwnr7A7M • i r ■ h w v ■ m ■ v ■ Unit in mm LO W FORW ARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE PO W ER SUPPLY APPLICATION 1Q.3MAX. i 3.2 ±0.2 X" CONVERTER & CHOPPER APPLICATION


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    PDF 10FWJ2CZ47M 961001EAA2' 10FWJ2CZ47M

    5D2 diode

    Abstract: MDL01 MFW10
    Text: RDHfTl >MFW10P SOP Type Diode Part No. Device MDL01 1, 2, 3, 4 V cc (V) (A ) (m W ) 60±10 2 600 G , 1000— Resistance Value Vf (V) >0 (A ) VF (V) If (A ) 5 1 — 1.5 1 Ri (Û ) 680 R a /R i 14.7 • Product Designation •W hen ordering, specify the type.


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    PDF MFW10P MDL01 Q00ci5Ã 5D2 diode MFW10

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    IC M605

    Abstract: diode B410 M605 6DI15A-120 30S3 T810 Transistor AC 125
    Text: 6DI15A-12005A g ± / < 7 — )V I Outline Drawings POWER TRANSISTOR MODULE : Features • ffiflötEE High Voltage • 7 ij- * 4 •; K rt* Including Free Wheeling Diode ■ Insulated Type — Ty ^-^ Ç ■ 7t7.\'s9? *»250/ '■7T*.h'sf7 'H NttllD allOX 11- " T -—


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    PDF 6DI15A-12005A) E82988 11ffit I95t/R89) Shl50 IC M605 diode B410 M605 6DI15A-120 30S3 T810 Transistor AC 125

    FSHS04A12

    Abstract: No abstract text available
    Text: 4A 120V T»150V ^ ^ Z Z í¿ 2 h' FSHS04A12 Fully Moldedsimilar to TO-220AC ttffft Nihon Inter Electronics Corporation Specification m m Construction J1 ÌÉ Application ïjli^CÆ .fê' '> 3 y Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS T a = 2 5 0 Unless otherwise specified


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    PDF TQ-220AC FSHS04A12 FSHS04Ar UL94V-0

    CNY17F-1X

    Abstract: CNY17F-2X E91231 cny 17 ISOCOM lot number transistor cny CNY 27-4
    Text: ISOCOM CO MP O N E N T S LTD HôfibSlO QQ QOS SM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a


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    PDF 46fibS10 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20mA) CNY17F-1X CNY17F-2X E91231 cny 17 ISOCOM lot number transistor cny CNY 27-4

    MDC02

    Abstract: MDC05 MFW14 MDC01
    Text: Composite Transistors Multi Devices •M F W 1 4 SOP type Diode Part No. MDC01 MDC02 MDC03 MDC04 MDC05 Device VcEü (V) lc (A) 1. 2, 3 -1 0 -3 1C 1, 2, 3 —2C -3 1, 2, 3 -1 0 -3 1C 500 3 4, 5, 6 4, 5, 6 Pd (mW) 500 500 3 1, 2, 3 -2 0 -3 1, 2, 3 —2C -3


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    PDF MDC01 MDC02 MDC03 MDC04 MDC05 MDC05 MFW14

    MDC03

    Abstract: Marking TRANSISTOR 737 common collector pnp array common collector npn array MFW14 Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array
    Text: MDC03 Transistor, array, 3 x NPN, 3 x PNP Features Dimensions Units: mm • • available in MFW14 package package marking: MDC03 • three NPN transistors with common emitter and three PNP transistors with common emitter are mounted in single package •


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    PDF MDC03 MFW14 MFW14) MDC03 -100m -100m QG153EH Marking TRANSISTOR 737 common collector pnp array common collector npn array Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array

    MFW diode

    Abstract: l33a Diode MFW 25 Diode MFW 26 Diode MFW MFW diode 31 GP 119 diode
    Text: IRFW/I720A A d v a n c e d Power MOSFET FEATURES B V dss = 4 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower LeakageCurrent : 10 uA Max. @ VM = 400V


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    PDF IRFW/I720A ERFW/I720A MFW diode l33a Diode MFW 25 Diode MFW 26 Diode MFW MFW diode 31 GP 119 diode

    TA6270F

    Abstract: MDA01 MDE01 mfw10 transistor A1RB DJ01 MPL2 MDC02
    Text: Composite Transistor Arrays Multi Devices Being housed in a miniaturized flat package, suitable for camera and VIDEO motor drive application. Can be configured as motor forward and reverse bridge circuit and help to reduce motor drive section. Tape and reel assists automated insertion.


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    IRF740LC

    Abstract: Ultra High Voltage Hexfets 10-25l f1010 bfi transformer td 3101 n marking 7ka IRF1010 IR4060
    Text: PD-9.1068 International S i Rectifier IRF740LC HEXFET P ow er M O SFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V g s Rating Reduced Ciss» Coss. Crss Extremely High Frequency Operation Repetitive Avalanche Rated


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    PDF IRF740LC 47304C3 0683l 7132-S. IRF740LC Ultra High Voltage Hexfets 10-25l f1010 bfi transformer td 3101 n marking 7ka IRF1010 IR4060

    Untitled

    Abstract: No abstract text available
    Text: SG2000 SERIES SILICON GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR IN T E G R A T E D C IR C U IT S DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in


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    PDF SG2000 500mA 16-PIN 20-PIN SG2XXXL/883B

    MFW10

    Abstract: No abstract text available
    Text: Composite Transistors Multi Devices Being housed in a miniaturized flat package, suitable for camera and VIDEO motor drive application. Can be configured as motor forward and reverse bridge circuit and help to reduce motor drive section. Tape and reel assists automated insertion.


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    PDF MDJ01 MFW10 MFW10

    MDJ01

    Abstract: MFW10 as motor
    Text: Composite Transistors Multi Devices Being housed in a miniaturized flat package, suitable for camera and VIDEO motor drive application. Can be configured as motor forward and reverse bridge circuit and help to reduce motor drive section. Tape and reel assists automated insertion.


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    PDF MFW10 MDJ01 MFW10 as motor