schottky diode sod-123 marking code 120
Abstract: marking code diode 14 1N5819WB diode sod-123 marking code 26 diode sod-123 marking code 120 marking code sr MARKING ME 123 1N5817WB 1N5818WB diode marking 14
Text: 1N5817WB-1N5819WB 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Marking: 1N5817WB Marking Code: A0 1N5818WB Marking Code: ME 1N5819WB Marking Code: SR Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25OC
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1N5817WB-1N5819WB
1N5817WB
1N5818WB
1N5819WB
OD-123
1N5817WB
1N5818WB
1N5819WB
schottky diode sod-123 marking code 120
marking code diode 14
diode sod-123 marking code 26
diode sod-123 marking code 120
marking code sr
MARKING ME 123
diode marking 14
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1N5818WB
Abstract: 1N5819WB diode sod-123 marking code 120 1N5817WB
Text: 1N5817WB-1N5819WB 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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1N5817WB-1N5819WB
1N5817WB:
1N5818WB:
1N5819WB:
OD-123
1N5817WB
1N5818WB
1N5819WB
OD-123
1N5818WB
1N5819WB
diode sod-123 marking code 120
1N5817WB
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SIR-341ST3F
Abstract: No abstract text available
Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
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SIR-341ST3F
SIR-341ST3F
940nm
IF50mA)
R1010A
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Untitled
Abstract: No abstract text available
Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
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SIR-341ST3F
SIR-341ST3F
940nm
R1120A
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Untitled
Abstract: No abstract text available
Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
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SIR-341ST3F
SIR-341ST3F
940nm
IF50mA)
1/216deg.
P940nm)
R1120A
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SIR-34ST3F
Abstract: No abstract text available
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking
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SIR-34ST3F
SIR-34ST3F
950nm
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Untitled
Abstract: No abstract text available
Text: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking
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SIR-34ST3F
SIR-34ST3F
950nm
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching diode L1SS400GT1G • Applications High speed switching • Features 1 Extremely small surface mounting type. 1 2) High Speed. 3) High reliability. • Construction Silicon epitaxial planar 2 SOD - 723 • Device Marking
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L1SS400GT1G
L1SS400GT1G
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Untitled
Abstract: No abstract text available
Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
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SIR-341ST3F
SIR-341ST3F
940nm
R1120A
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching diode L1SS400T1 • Applications High speed switching • Features 1 Extremely small surface mounting type. 1 2) High Speed. 3) High reliability. • Construction Silicon epitaxial planar 2 SOD - 523 • Device Marking
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L1SS400T1
L1SS400T1G
L1SS400T1â
SC-79/SOD-523
OD523
SC-79
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Untitled
Abstract: No abstract text available
Text: SIR-341ST3F Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
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SIR-341ST3F
SIR-341ST3F
940nm
IF50mA)
1/216deg.
P940nm)
R1120A
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transistor d 1933
Abstract: marking 9AW CN1933 CP1342
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1933 9AW TO-220 MARKING: CN 1933 Low Freq. Power Amp. Built in Damper Diode Complementry CP1342 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
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CN1933
O-220
CP1342
25deg
100ms
C-120
transistor d 1933
marking 9AW
CN1933
CP1342
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CN1933
Abstract: CP1342
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP1342 9AW TO-220 MARKING: CP 1342 Low Freq. Power Amp. Built in Damper Diode Complementry CN1933 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
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CP1342
O-220
CN1933
25deg
100ms
C-120
CN1933
CP1342
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marking 9AW
Abstract: CN1933 CP1342
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP1342 9AW TO-220 MARKING: CP 1342 Low Freq. Power Amp. Built in Damper Diode
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CP1342
O-220
CN1933
25deg
C-120
marking 9AW
CN1933
CP1342
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BSM 151
Abstract: FR-SD ERB37
Text: ERB37 i .qa K : Outline Drawings FA ST RECO V ERY DIODE : Features M ^ tsz : Marking Super high speed switching Low VF in turn on High reliability Applications High speed switching. : Maximum Ratings and Characteristics : Absolute Maximum Ratings Items Repetitive Peak Reverse Voltage
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ERB37
10fl-0.
BSM 151
FR-SD
ERB37
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DIODE s3l
Abstract: S3L 15 diode DIODE s3l 15 3L60 3L60U DIODE s3l 65 S3L60U
Text: n - n x V'CX-Y- Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 600V 2.2A CD r7TU . 7-0 26.5±2 • h Unit • mm Package I AX14 <¡>4.4-0. 2 6 .5 « iîj ï l l d <> -N - •trr50ns •:-tSEPB*[ Marking S3L 05 •P F C nan£ Type No. •SRSÍÜ
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S3L60
trr50ns
J515-5
DIODE s3l
S3L 15 diode
DIODE s3l 15
3L60
3L60U
DIODE s3l 65
S3L60U
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DIODE FAST S2L
Abstract: DIODE s2l S2L60 S2L DIODE "S2L" DIODE
Text: n - n x V 'C X - Y Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S2L60 600V 1-5A CD 26.5±2 • Unit • mm Package I AX10 <¡>4.4-0. 26.5« 7-0 h iîj ïl l d <> •trr50ns -N - •:-tSEPB*[ Marking S2L 07 •P F C / •SRSÍÜ • ^ B s O A ffi'E
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S2L60
trr50ns
J515-5
DIODE FAST S2L
DIODE s2l
S2L60
S2L DIODE
"S2L" DIODE
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 16W Silicon Switching Diode • For high speed switching, applications Type Marking Ordering Code tape and reel BAS 16W A6s Q62702-A1050 Pin Configuration 1 2 3 A C Package SOT-323 Maximum Ratings Parameter Symbol Reverse voltage Vr B A S 16W
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Q62702-A1050
OT-323
235bOS
G12DS71
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d3s marking
Abstract: d3s diode DIODE marking S6 89
Text: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S4M 40V 3A 0 Feature • Tj=150°C • Tj=150°C • P r r s m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating DC/DC n y j t - l ? • m m 26.5 26.5 iT > Main Use • * JS fM M B S H Marking
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T930
Abstract: diode code yw marking code YW DIODE T460 ERC13 T151 Shl50
Text: ERC13 1 .2A — K : Outl i ne Drawings GENERAL USE RECTIFIER DIODE •*(#•§ : Features • High surge current • 'Jv5 2 ,liM • A fflS H i Compact size, lightweight M it T F I Marking High reliability * 9 - 3 - H :# Color code: Blue \ General purpose rectifier applications
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ERC13
I95t/R89)
Shl50
T930
diode code yw
marking code YW DIODE
T460
T151
Shl50
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ERA32
Abstract: T460 T151 T760 marking code CV3
Text: ERA32 ia • ftîfê '+ fè : Outline* Drawings FAST RECOVERY DIODE *3 T . \ — 28MIN — ¿08. 1 5 -28MIN— Features Super high speed switching. • 1&Vf Low VF ’ Marking A f - J - K : tt Color • a ftfttt High reliability code : Orange >> Abridged type name
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ERA32
28MIN
28MINâ
I95t/R89)
Shl50
T460
T151
T760
marking code CV3
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Untitled
Abstract: No abstract text available
Text: ERB35 ia I Outline Drawings FAST RECOVERY DIODE : Features • iê/K : Marking Soft recovery, low noise • A f t f f i't i High reliability * —3 — K $ Cole r code : Applications Abridged type n am e^' DP f t -> Silver s. 1 ^ O ÍV - Í- 'T - Í ft-
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ERB35(
I95t/R89)
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CCD GFT
Abstract: ERD31 SS53 40114 JD51
Text: ERD31 i.5A t> £ : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current H igh voltage by mesa design 'M is ttte •h ' j — Y - j - 0 High reliability 031-04 , (-«HtflE* i ±W : f t ] ■T«J lOfl-Q. Hfl-«. I2A- : Applications ■■Œî'9^
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ERD31
CCD GFT
ERD31
SS53
40114
JD51
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MARKING aep
Abstract: No abstract text available
Text: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW
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I95t/R89)
Shl50
MARKING aep
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