marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking BAV19WS S5 BAV20WS S6 BAV21WS S7 Small Outline Flat Lead Plastic Package High Voltage Switching Diode Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted
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200mW
OD-323
BAV19WS
BAV20WS
BAV21WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
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SCHOTTKY DIODE SOT-143
Abstract: DIODE MARKING s7 A1017
Text: Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099 S7
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Q62702-A1017
OT-143
SCHOTTKY DIODE SOT-143
DIODE MARKING s7
A1017
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Untitled
Abstract: No abstract text available
Text: BBY 53 Silicon Tuning Diode 3 High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment High ratio at low reverse voltage 2 1 Type Marking BBY 53 S7s Pin Configuration 1 = A1 2 = A2 VPS05161
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VPS05161
OT-23
Dec-07-2000
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BBY53
Abstract: No abstract text available
Text: BBY53 3 Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 2 for VCOs in mobile communications equipment High ratio at low reverse voltage Type BBY53 Marking S7s 1 Pin Configuration 1 = A1 2 = A2 3 = C1/2
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BBY53
VPS05161
Jul-04-2001
BBY53
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VPS05161
Abstract: diode marking 53 53 diode
Text: BBY 53 Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 Type Marking BBY 53 S7s Pin Configuration 1 = A1 2 = A2 VPS05161
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VPS05161
OT-23
Oct-05-1999
VPS05161
diode marking 53
53 diode
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Untitled
Abstract: No abstract text available
Text: BBY53-05W 3 Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment High ratio at low reverse voltage 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type BBY53-05W Marking S7s
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BBY53-05W
VSO05561
EHA07179
OT323
Feb-28-2002
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Untitled
Abstract: No abstract text available
Text: BBY 53 3 Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 2 for VCOs in mobile communications equipment High ratio at low reverse voltage Type Marking BBY 53 S7s 1 Pin Configuration 1 = A1 2 = A2 3 = C1/2
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VPS05161
OT-23
Feb-19-2001
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B824 transistor
Abstract: transistor B824 B824 Q62702-B824
Text: BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53
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Q62702-B824
OT-23
Feb-04-1997
B824 transistor
transistor B824
B824
Q62702-B824
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all diodes ratings
Abstract: BAT43WS s7 200 BAT42WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
all diodes ratings
s7 200
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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PDF
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
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s7 200
Abstract: BAT42W BAT43W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAT42W/BAT43W SCHOTTKY DIODES SOD-123 FEATURES MARKING: BAT42W S7 BAT43W S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42W/BAT43W
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OD-123
BAT42W/BAT43W
OD-123
BAT42W
BAT43W
200mA
BAT42W
BAT43W
s7 200
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s7 200
Abstract: BAT42W BAT42WS BAT43W BAT43WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42WS/BAT43WS
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42W
BAT43W
s7 200
BAT42W
BAT43W
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BBY53-05W
Abstract: VSO05561
Text: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W
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BBY53-05W
VSO05561
EHA07179
OT323
Jul-02-2001
BBY53-05W
VSO05561
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Untitled
Abstract: No abstract text available
Text: BBY 53-05W Silicon Tuning Diode 3 High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W
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3-05W
VSO05561
EHA07179
OT-323
Dec-07-2000
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VSO05561
Abstract: No abstract text available
Text: BBY 53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W
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3-05W
VSO05561
EHA07179
OT-323
Oct-05-1999
VSO05561
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code BBY53 S7s Q62702-B824
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OCR Scan
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PDF
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BBY53
Q62702-B824
OT-23
H35bDS
0S35bD5
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diode marking KJ
Abstract: KJ DIODE MARKING
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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OCR Scan
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PDF
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Q62702-A1017
OT-143
EHA07011
diode marking KJ
KJ DIODE MARKING
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6-BT
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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OCR Scan
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PDF
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Q62702-A1017
OT-143
flS35bOS
6-BT
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diode marking 53
Abstract: marking VB DIODE
Text: SIEMENS BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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OCR Scan
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PDF
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Q62702-B824
OT-23
diode marking 53
marking VB DIODE
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